本文關(guān)鍵詞：高能勞厄單色器晶體壓彎機(jī)構(gòu)的優(yōu)化設(shè)計(jì)　出處：《中國科學(xué)院研究生院(上海應(yīng)用物理研究所)》2017年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 勞厄單色器 壓彎機(jī)構(gòu) 各向異性 長寬比 有限元分析

【摘要】：上海同步輻射光源二期工程將建造一條超硬多功能線站,超硬線采用超導(dǎo)扭擺器作為光源,光源水平發(fā)散角非常大,約為6 mrad。為有效利用此光源,超硬線采用一臺(tái)高能勞厄雙晶單色器。高能勞厄雙晶單色器的核心部件是弧矢壓彎機(jī)構(gòu),晶體弧矢半徑與子午半徑的優(yōu)化會(huì)影響單色器的光通量和能量分辨率。因此,本文通過找尋可能對(duì)晶體弧矢與子午半徑產(chǎn)生影響的因素,為高能勞厄單色器壓彎機(jī)構(gòu)的優(yōu)化設(shè)計(jì)提供參考。本文介紹了超硬多功能線站的特點(diǎn)、高能勞厄單色器的組成以及高能勞厄單色器的工作原理。對(duì)單色器晶體、晶面和壓彎半徑的選擇作了說明。討論了同步輻射常用壓彎方式的特點(diǎn)以及高能勞厄單色器常用機(jī)械壓彎方式的優(yōu)缺點(diǎn)。對(duì)高能勞厄單色器壓彎機(jī)構(gòu)的設(shè)計(jì)指標(biāo),壓彎與調(diào)節(jié)系統(tǒng)作了簡介。介紹了有限元方法,用ANSYS Workbench軟件建立了有限元分析模型,精確模擬分析了單晶硅的各向異性、單晶硅的長寬比、葉簧片推壓角、葉簧片尺寸對(duì)晶體壓彎半徑的影響。研究結(jié)果表明,Si(100)晶體最佳切割邊界為[011]方向和[0-11]方向;晶體的優(yōu)化尺寸為90 mm×40 mm×1 mm,其中有效長度、寬度為l×w=70 mm×40 mm;葉簧片推壓角在0.015°內(nèi),葉簧片有效長度長度、厚度與寬度分別為53±0.25 mm、0.50+0.01 mm與50±0.25 mm時(shí),晶體的弧矢半徑與子午半徑符合理論設(shè)計(jì)要求。最后,對(duì)壓彎機(jī)構(gòu)進(jìn)行了熱分析,比較分層加載與表面加載方式對(duì)晶體溫度的影響,提出通過更換葉簧片材料可降低晶體溫度的建議,優(yōu)化結(jié)果表明可降低晶體溫度21.82℃。對(duì)更換葉簧片材料后的壓彎機(jī)構(gòu)進(jìn)行了位移載荷與熱載荷的綜合分析,結(jié)果符合要求。本文創(chuàng)新點(diǎn)在于采用各項(xiàng)異性有限元模型優(yōu)化分析了高能勞厄單色器晶體壓彎機(jī)構(gòu),并且結(jié)合工程實(shí)際分析了葉簧片尺寸一致性對(duì)壓彎半徑影響,通過優(yōu)化葉簧片的材料降低了勞厄單色器晶體溫度,優(yōu)化成果已經(jīng)應(yīng)用于高能勞厄單色器壓彎機(jī)構(gòu)的原型樣機(jī)中。
[Abstract]:A superhard multifunctional line station will be built in the second phase of Shanghai Synchrotron radiation light source project. The superconducting torsion pendulum is used as the light source. The horizontal divergence angle of the light source is very large, about 6 mrad. in order to make effective use of this light source. A high energy Laue double crystal Monochromator is used in the superhard wire. The key component of the high energy Laue double crystal Monochromator is the sagittal bending mechanism. The optimization of crystal arc radius and meridian radius will affect the luminous flux and energy resolution of Monochromator. This paper introduces the characteristics of super hard multifunctional line station, the composition of high energy Laue Monochromator and the working principle of high energy Laue Monochromator. The selection of crystal plane and bending radius is explained. The characteristics of synchrotron radiation common bending modes and the advantages and disadvantages of mechanical bending methods in high energy Laue Monochromator are discussed. The design index of bending mechanism of high energy Laue Monochromator is discussed. . The finite element method is introduced, the finite element analysis model is established by ANSYS Workbench software, and the anisotropy of monocrystalline silicon is accurately simulated. The effect of the aspect ratio of monocrystalline silicon, the pushing angle of leaf Reed and the size of leaf Reed on the bending radius of crystal is studied. [Direction and direction. [0-11] direction; The optimized size of the crystal is 90mm 脳 40mm 脳 1mm, in which the effective length and width are l 脳 wln 70mm 脳 40mm; When the pressing angle of leaf Reed is within 0.015 擄, the effective length, thickness and width of leaf Reed are 53 鹵0.25 mm, 0.50 mm, 0.01 mm and 50 鹵0.25 mm, respectively. The radius of the arc vector and the radius of the meridian of the crystal meet the theoretical design requirements. Finally, the thermal analysis of the bending mechanism is carried out to compare the effect of stratified loading and surface loading on the temperature of the crystal. It is suggested that the crystal temperature can be reduced by replacing the leaf Reed material. The optimized results show that the crystal temperature can be reduced by 21.82 鈩，

本文編號(hào)：1432736