本文關(guān)鍵詞：靜電感應晶體管的研究與仿真　出處：《蘭州交通大學》2015年碩士論文　論文類型：學位論文

  更多相關(guān)文章： 靜電感應晶體管 溝道勢壘 工藝參數(shù) 器件仿真

【摘要】：隨著高新技術(shù)的發(fā)展和人們對高品質(zhì)生活條件的追求,導致電力半導體器件的更新?lián)Q代越來越快,而其研發(fā)周期通常包括理論研究、產(chǎn)品試驗和批量生產(chǎn)三個環(huán)節(jié),所以對于提高產(chǎn)品試驗成功率、縮短產(chǎn)品推向市場的時間來說,成熟的理論研究和基于軟件的輔助設(shè)計至關(guān)重要。目前,靜電感應晶體管作為新型半導體器件的一種,理論研究滯后于實踐過程,且利用計算機輔助研究也不多見。因此,本文通過半導體仿真軟件Silvaco Tcad對器件進行仿真模擬,達到對器件工作的物理機理解釋和器件結(jié)構(gòu)的關(guān)鍵參數(shù)優(yōu)化的目的。論文研究工作主要包括四個方面:一是論述靜電感應晶體管的結(jié)構(gòu)種類、工作機理。在此基礎(chǔ)上,從性能相似性和原理代表性兩個方面分析確定了本文的研究結(jié)構(gòu)為基于硅的表面柵型靜電感應晶體管。二是從Silvaco Tcad仿真軟件入手,建立了器件仿真模型。首先簡單對半導體仿真軟件做了介紹;其次以材料硅為襯底材料,針對本文研究的基于硅平面柵靜電感應晶體管器件,從基本方程、材料特性、界面特性、物理模型、離化模型、邊界條件等方面對器件模擬方法做了定義。三是從工藝角度入手,對器件的研制過程進行了工藝仿真。以軟件工藝仿真模塊Athene為模擬平臺,從生成氧化層、擴散和離子注入雜質(zhì)、光刻等工藝進行了模擬仿真;重點是通過對比分析,選用了橫向擴散小、結(jié)深相對精確的離子注入柵代替?zhèn)鹘y(tǒng)的擴散法,源極區(qū)采用快退火形成雜質(zhì)的二次分布和消除晶格損傷。四是從器件仿真入手,對影響器件電學性能的關(guān)鍵結(jié)構(gòu)參數(shù)進行了分析。這個過程是基于軟件電學仿真模塊Atlas進行的。一方面仿真分析了器件類五極管飽和特性曲線和類三極管不飽和特性曲線,并通過改變反偏柵壓和漏偏壓,分析溝道勢壘形成機理;另一方面對影響器件伏安特性曲線的關(guān)鍵結(jié)構(gòu)參數(shù)進行了仿真分析,確定了器件各電學性能參數(shù)對器件溝道長寬、源極區(qū)參數(shù)、漂移層參數(shù)的相互依賴關(guān)系,從而得到所需器件性能所對應的最優(yōu)器件結(jié)構(gòu)參數(shù),為器件工藝實踐起到了理論指導作用。
[Abstract]:With the development of high technology and people's pursuit of high quality life conditions, resulting in power semiconductor devices update more quickly, and the development cycle usually includes theoretical research, product test and batch production of three links, so to improve the success rate of product testing, shorten product time to market, mature theoretical research and based on the auxiliary software design is very important. At present, the static induction transistor as a new type of semiconductor devices, theoretical research lags behind the practice process, and the use of computer aided research is rare. Therefore, this paper carries on the simulation of semiconductor devices by simulation software Silvaco Tcad, to explain physical mechanism and device structure of the device. The key parameter optimization. The research work mainly includes four aspects: one is to discuss the structure of static induction transistor Type of work mechanism. On this basis, from two aspects of the performance of similar principle and representative analysis determine the structure of this paper is the surface gate static induction transistor based on silicon. The two is to start from the Silvaco Tcad simulation software, established simulation model. Firstly, the semiconductor simulation software is introduced; secondly with the material of silicon as the substrate, the silicon surface gate static induction transistor device based on this research, from the basic equations, material properties, interface properties, physical model, ionization model, boundary conditions and so on device simulation methods have been defined. Three is to start from the point of view of technology, the development process of the devices were process simulation. Simulation software to process module Athene as the simulation platform, from the oxide layer, the impurity diffusion and ion implantation, lithography processes were simulated; the focus is through comparative analysis, choose With the lateral diffusion of small, relatively accurate junction depth of ion implantation diffusion method instead of the traditional gate, a source region formed by fast annealing two impurity distribution and elimination of lattice damage. Four is starting from the device simulation, the key structure parameters affecting the electrical properties were analyzed. The process is the software of electrical simulation module Atlas based on the simulation analysis. On the one hand the device class pentode saturation curve and triode saturation curve, and by changing the reverse gate voltage and drain bias, analysis channel barrier formation mechanism; on the other hand the key effect of the structure of device of volt ampere characteristic curve parameters are simulated and analyzed, determine the device the electrical parameters of the device channel length, source parameters, interdependence drift layer parameters, thus the optimal structure parameters required for the performance of the device, device The practice of part process has played a theoretical guiding role.

【學位授予單位】：蘭州交通大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN32

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本文編號：1406079