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紅外多波段陣列有源光電標(biāo)識技術(shù)研究

發(fā)布時間:2018-01-07 22:05

  本文關(guān)鍵詞:紅外多波段陣列有源光電標(biāo)識技術(shù)研究 出處:《中北大學(xué)》2015年碩士論文 論文類型:學(xué)位論文


  更多相關(guān)文章: 有源光電標(biāo)識 目標(biāo)識別 動態(tài)標(biāo)識圖形 紅外LED MEMS紅外光源


【摘要】:紅外光電標(biāo)識作為有源標(biāo)識技術(shù)的重要支撐,其獨特的夜視性,穿透能力強,安全隱蔽性高。在目標(biāo)身份識別領(lǐng)域的非協(xié)作式識別方式中起著舉足輕重的作用,隨著識別環(huán)境的日益復(fù)雜,單一的紅外光電標(biāo)識裝置已經(jīng)不能滿足。開展紅外多波段陣列有源光電特征標(biāo)識技術(shù)的研究,集合短波紅外、中波紅外和長波紅外的有源標(biāo)識裝置在目標(biāo)身份識別領(lǐng)域有著重要的意義和應(yīng)用場合。 在短波紅外方面的選取仿流明紅LED作為標(biāo)識光源,其輻射中心波長為940nm;對仿流明紅LED的伏安特性、電光轉(zhuǎn)化特性和響應(yīng)時間等特性進行分析,仿流明紅LED的紅外輻射功率受驅(qū)動電流的影響,在700mA驅(qū)動電流作用下,其相對輻射功率達到38W/cm2。中波和長波紅外的標(biāo)識光源,選取用MEMS工藝制作的具有微米級的能輻射中波和長波紅外光源的MEMS紅外光源,,其光譜分布范圍為2~14μm,存在兩個輻射峰值;紅外輻射效率隨著驅(qū)動電壓的增大可以達到10.85%。選用車載12V或24V電源對多波段標(biāo)識裝置進行供電,設(shè)計基于線性ADP3336穩(wěn)壓芯片和LM2576HV-12芯片的光源陣列驅(qū)動電路,多波段陣列標(biāo)識裝置的光源陣列有平面陣列和三維陣列兩種;對光源陣列進行動態(tài)標(biāo)識圖形編碼調(diào)制,三維陣列擁有著空間上和光源頻率上的動態(tài)變化,實現(xiàn)頻率和空間上的混合動態(tài)標(biāo)識圖形編碼調(diào)制,有效的提高標(biāo)識圖形的安全性。 在不同的背景下,采用不同的紅外熱像儀,對動態(tài)標(biāo)識圖形的標(biāo)識效果進行觀察,夜晚的標(biāo)識效果優(yōu)于白天的標(biāo)識效果,長波紅外標(biāo)識在白天幾乎無法辨別;白天背景環(huán)境對標(biāo)識裝置的影響要大于夜晚背景環(huán)境對標(biāo)識裝置的影響;三維陣列的標(biāo)識效果要優(yōu)于平面陣列的標(biāo)識效果;在500m探測距離可以清晰的觀察到動態(tài)標(biāo)識圖形,在2km的距離下可以明顯的辨別出標(biāo)識裝置,光源陣列的閃爍頻率在小于50Hz時可以明顯辨別,總體識別效果良好。為紅外多波段有源光電標(biāo)識技術(shù)在目標(biāo)識別領(lǐng)域的應(yīng)用提供了理論依據(jù)。
[Abstract]:As an important support of active identification technology, infrared photoelectric marking has its unique night vision, strong penetration ability, high security and concealment. It plays an important role in non-cooperative identification in the field of target identification. With the increasing complexity of the recognition environment, the single infrared photoelectric marking device can not be satisfied. The research of infrared multi-band array active photoelectric characteristic marking technology is carried out, which gathers short-wave infrared. The active identification device of medium wave infrared and long wave infrared has important significance and application in the field of target identification. In the aspect of short wave infrared, the imitated lumen red LED is selected as the identification light source, and its central wavelength is 940nm; The characteristics of volt-ampere, electro-optic conversion and response time of imitating lumen red LED are analyzed. The infrared radiation power of imitated lumen red LED is affected by driving current, under the action of 700mA driving current. The relative radiation power is 38 W / cm 2. The medium wave and long wave infrared identification light source is selected. The MEMS infrared light source with micron level radiation medium wave and long wave infrared light source is selected by MEMS process. The spectral distribution ranges from 2 渭 m to 14 渭 m, and there are two peak radiation peaks. The infrared radiation efficiency can reach 10.85 with the increase of driving voltage. The multi-band marking device can be powered by 12V or 24V power supply. The driving circuit of light source array based on linear ADP3336 and LM2576HV-12 chip is designed. There are two kinds of light source array of multi-band array identification device: planar array and three-dimensional array. The dynamic identification graphics coding modulation is carried out for the light source array, and the three-dimensional array has the dynamic changes in space and light source frequency, so the hybrid dynamic identification graphics coding modulation is realized in the frequency and space. Effectively improve the security of logo graphics. Under different background, using different infrared thermal imager to observe the marking effect of dynamic marking graphics, the marking effect of night is better than that of day, and the long wave infrared sign is almost impossible to distinguish during the day. The influence of daytime background environment on marking device is greater than that of night background environment on marking device. The identification effect of 3D array is better than that of planar array. The dynamic identification pattern can be clearly observed in the 500m detection range, and the marking device can be clearly identified at a distance of 2 km. The flicker frequency of the light source array can be clearly distinguished when the frequency of the light source array is less than 50 Hz. It provides a theoretical basis for the application of infrared multi-band active photoelectric marking technology in the field of target recognition.
【學(xué)位授予單位】:中北大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號】:TN219

【參考文獻】

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