本文關(guān)鍵詞：剪切載荷下面陣列封裝互連結(jié)構(gòu)的力學(xué)行為研究　出處：《哈爾濱理工大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： BGA CCGA CuCGA 長(zhǎng)徑比 至斷剪切力 至斷位移

【摘要】：隨著電子產(chǎn)品向微型化、多功能化方向發(fā)展，面陣列封裝以其高I/O數(shù)、導(dǎo)熱性能好、封裝體積小和成本低等優(yōu)點(diǎn)成為目前的主流封裝形式。電子產(chǎn)品在使用過程中，由于熱循環(huán)，跌落沖擊等因素可能在芯片基板和電路板之間產(chǎn)生剪切載荷使其損壞失效，因此研究互連結(jié)構(gòu)的剪切性能十分重要。 本文采用PTR-1100接合強(qiáng)度測(cè)試儀對(duì)單個(gè)BGA微焊點(diǎn)以及BGA，CCGA和CuCGA封裝的整體陣列互連結(jié)構(gòu)的剪切性能進(jìn)行了實(shí)驗(yàn)研究，并考察了焊點(diǎn)形狀參數(shù)和剪切速度對(duì)陣列互連結(jié)構(gòu)的剪切行為的影響。結(jié)果表明： 1）BGA單球和陣列互連的剪切曲線均呈拋物線形。CCGA和CuCGA陣列互連在發(fā)生撓曲變形后剪切曲線表現(xiàn)出不同的四個(gè)階段，并且焊柱在第一階段以彈性變形為主，在第二階段以撓曲變形為主。 2）SAC305和Sn30Pb70BGA微焊點(diǎn)的至斷剪切力隨剪切高度的增加而減小，隨剪切速度的增加而增大。至斷位移隨剪切高度的增加而增加；而剪切速度對(duì)單個(gè)微焊點(diǎn)的至斷位移的影響在SAC305和Sn30Pb70兩種不同材料上有所不同。BGA陣列互連的至斷剪切力隨剪切速度的增加呈增加趨勢(shì)，至斷位移則呈減小趨勢(shì)。 3）長(zhǎng)徑比從3到10，CCGA的至斷剪切力先減小后增加，然后趨于平穩(wěn)；長(zhǎng)徑比從6到12，CuCGA的至斷剪切力則呈增加趨勢(shì)，，但增加趨勢(shì)變得緩慢。CCGA和CuCGA的至斷位移隨長(zhǎng)徑比的增加而增加。隨著剪切速度的增加，CCGA和CuCGA的至斷剪切力都呈增加趨勢(shì)；CuCGA的至斷位移也呈增加趨勢(shì)，而剪切速度對(duì)CCGA至斷位移的影響因長(zhǎng)徑比的不同而有所不同。 4）相同剪切條件下，SAC305單個(gè)BGA微焊點(diǎn)的至斷剪切力高出Sn30Pb70約1~4N，陣列互連高出Sn30Pb70約3N；SAC305的至斷位移也普遍高于Sn30Pb70。相同長(zhǎng)徑比時(shí)，無(wú)論是高速剪切還是低速剪切，CuCGA的至斷剪切力都要比CCGA的至斷剪切力高出30~60N。
[Abstract]:With the development of miniaturization and multifunction of electronic products, surface array packaging has good thermal conductivity due to its high I / O number. The advantages of small package size and low cost have become the mainstream packaging form. Electronic products in the process of use due to the thermal cycle. The shear load between the chip substrate and the circuit board may be caused by the drop impact, so it is very important to study the shear performance of the interconnect structure. In this paper, PTR-1100 bonding strength tester is used to study the shear performance of single BGA micro-solder joint and the whole array interconnect structure packaged by BGA CCGA and CuCGA. The effects of solder joint shape parameters and shear velocity on the shear behavior of the array interconnection structures are investigated. 1. The shear curves of single sphere and array interconnect are parabola. The shear curves of CCGA and CuCGA array interconnect show four different stages after flexural deformation. In the first stage, elastic deformation is the main deformation, and in the second stage, flexural deformation is the main deformation. 2the breaking shear stress of SAC305 and Sn30Pb70BGA microjoints decreases with the increase of shear height, increases with the increase of shear velocity, and increases with the increase of shear height. However, the effect of shear rate on the breaking displacement of single micro-solder joint is different between SAC305 and Sn30Pb70. The breaking shear force of BGA array interconnect increases with the increase of shear velocity. Plus trends. The displacements to fault tend to decrease. 3) the shear stress of CCGA from 3 to 10 mm decreases first, then increases, and then tends to steady. The shear stress of CuCGA with aspect ratio from 6 to 12 is increasing. But the increasing trend becomes slow. The displacements of CCGA and CuCGA increase with the increase of aspect ratio, and the shear stress of CCGA and CuCGA increase with the increase of shear velocity. The displacements of CuCGA increased, and the effect of shear velocity on the displacement of CCGA to fault varies with the ratio of length to diameter. 4) under the same shear condition, the breaking shear stress of single BGA microjoint is about 1 ~ 4 N higher than that of Sn30Pb70, and the interconnect of array is about 3 N higher than that of Sn30Pb70. The breaking displacement of SAC305 is also higher than that of Sn30Pb70.When the ratio of length to diameter is the same, both high-speed shear and low-speed shear are obtained. The ultimate shear stress of CuCGA is 30 ~ 60 Nm higher than that of CCGA.
【學(xué)位授予單位】：哈爾濱理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN405

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本文編號(hào)：1392124