本文關(guān)鍵詞：大功率碳化硅二極管和JFET模塊的研究　出處：《浙江大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 碳化硅 二極管 JFET 功率模塊

【摘要】：碳化硅(SiC)電力電子器件作為目前發(fā)展最為成熟的寬禁帶半導(dǎo)體功率器件,在高壓、大電流以及高頻的電力電子技術(shù)領(lǐng)域具有巨大的應(yīng)用潛力。目前,很多廠商都推出了商業(yè)化的碳化硅肖特基勢(shì)壘二極管(SBD)和碳化硅結(jié)型場(chǎng)效應(yīng)晶體管(JFET)器件,然而,由于單極性器件的特性和碳化硅材料、器件工藝的限制,這些器件的最高電壓電流等級(jí)往往在1200V/50A以下。為了實(shí)現(xiàn)碳化硅功率器件在高壓大容量電路中的應(yīng)用,將器件并聯(lián)實(shí)現(xiàn)模塊化十分必要。 本文首先給出了碳化硅器件外延層設(shè)計(jì)的理論方法,介紹了一種自主研制的碳化硅二極管和JFET芯片的結(jié)構(gòu)和制備流程,并且基于探針臺(tái)對(duì)這些芯片進(jìn)行了測(cè)試分析。 然后基于以上自主研制的芯片,進(jìn)行了碳化硅器件模塊化的設(shè)計(jì)和相應(yīng)的熱仿真,并且對(duì)多芯片并聯(lián)的優(yōu)化進(jìn)行了討論分析,成功制備了3500V/15A的全碳化硅功率模塊、4500V/150A的碳化硅二極管模塊和4500V/50A的碳化硅JFET模塊,最后設(shè)計(jì)了JFET功率模塊的驅(qū)動(dòng)電路并進(jìn)行了相應(yīng)的靜態(tài)和動(dòng)態(tài)開關(guān)測(cè)試。測(cè)試結(jié)果表明,制備模塊具備了相應(yīng)的電流導(dǎo)通和電壓阻斷能力,同時(shí)開關(guān)特性良好,模塊的容量為目前國內(nèi)已報(bào)道的基于自主碳化硅芯片模塊中的最高水平。
[Abstract]:Silicon Carbide (sic) power electronic devices, as the most mature wide gap semiconductor power devices, have great application potential in the field of high voltage, high current and high frequency power electronics. Many manufacturers have introduced commercial silicon carbide Schottky barrier diodes (SBD) and silicon carbide junction type field effect transistors (JFETs) devices, however, due to the characteristics of unipolar devices and silicon carbide materials. In order to realize the application of silicon carbide power devices in high-voltage and high-capacity circuits, the maximum voltage and current levels of these devices are often below 1200 V / 50 A due to the limitation of device technology. It is necessary to modularize the devices in parallel. In this paper, the theoretical method of epitaxial layer design for silicon carbide devices is presented, and the structure and fabrication process of a self-developed silicon carbide diode and JFET chip are introduced. These chips are tested and analyzed based on the probe table. Then, based on the self-developed chip, the modularization design and the corresponding thermal simulation of silicon carbide device are carried out, and the optimization of multi-chip parallel connection is discussed and analyzed. The silicon carbide diode module of 3500V / 15A and the silicon carbide JFET module of 4500V / 150A and 4500V / 50A are successfully fabricated. Finally, the driving circuit of the JFET power module is designed and the corresponding static and dynamic switching tests are carried out. The test results show that the fabricated module has the corresponding current conduction and voltage blocking capability. At the same time, the switch characteristics are good, the capacity of the module is the highest level of the domestic reported modules based on autonomous silicon carbide chip.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN31

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本文編號(hào)：1388600