本文關(guān)鍵詞：GLSI多層銅布線CMP后清洗BTA去除的研究　出處：《河北工業(yè)大學(xué)》2015年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： CMP后清洗 堿性清洗劑 堿性螯合劑 非離子表面活性劑 Cu-BTA

【摘要】：隨著集成電路工藝的不斷發(fā)展,芯片集成度不斷提高的同時器件的特征尺寸卻不斷減小,這樣雜質(zhì)對于器件的危害就顯得異常突出。集成電路表面的污染物會影響器件的電學(xué)性能、成品率以及可靠性,因此清洗就成為了集成電路制造業(yè)中非常重要的環(huán)節(jié)。銅拋光后清洗是化學(xué)機(jī)械平坦化過程中至關(guān)重要的一步,拋光后銅表面會有大量的拋光液磨料(二氧化硅或氧化鋁)和有機(jī)物殘留,殘留的有機(jī)物主要是苯并三氮唑(BTA)。BTA殘留導(dǎo)致銅表面疏水,影響磨料的去除。影響介質(zhì)經(jīng)時擊穿,導(dǎo)致器件穩(wěn)定性差。本論文針對目前清洗過程去除苯并三氮唑(BTA)的問題做了詳細(xì)的分析,研究BTA在銅CMP中的作用及吸附原理。BTA與Cu反應(yīng)生成Cu-BTA,Cu-BTA具有復(fù)雜的結(jié)構(gòu),在銅表面難溶。本論文中提出了一種能夠有效去除BTA及Cu-BTA的銅拋光后新型堿性清洗劑,并對清洗液的組分和濃度進(jìn)行了研究。清洗劑主要包括堿性螯合劑和非離子表面活性劑。首先,對實(shí)驗(yàn)中的BTA的使用濃度及浸泡時間做了分析,通過接觸角測試、金相顯微鏡及傅里葉紅外光譜測試得出BTA最佳生長條件。然后,對BTA的去除進(jìn)行螯合劑單因素實(shí)驗(yàn)。通過接觸角測試、靜態(tài)腐蝕速率電化學(xué)測試及KOH對比實(shí)驗(yàn),得出螯合劑對BTA去除起主要作用,同時得出螯合劑去除BTA效果較好的濃度范圍�；钚詣┏嗜跛嵝�,由活性劑單因素實(shí)驗(yàn)得出其對BTA去除起輔助作用,去除效果通過接觸角測試和靜態(tài)腐蝕速率來表征。最后,清洗劑去除BTA及其他污染物的效果由接觸角,靜態(tài)腐蝕速率和掃描電鏡測試結(jié)果表征。對于BTA的去除,酸性或堿性清洗劑比中性清洗劑更有效。本文中提出的堿性清洗劑具有pH值高,使用濃度低,不含TMAH,環(huán)保的優(yōu)點(diǎn)。通過大量實(shí)驗(yàn)得出,該清洗液中螯合劑濃度不宜高于200ppm,活性劑濃度不宜高于5000ppm,具體清洗液配比還需進(jìn)一步研究。
[Abstract]:With the continuous development of integrated circuit technology, the chip integration improves the feature size of the device has been reduced, so that the impurities in the device damage is very prominent. The pollutant surface of the integrated circuit will influence the electrical properties of the device, the rate of finished products and the reliability, so cleaning has become a very important integrated circuit manufacturing industry in the link. After polishing cleaning copper chemical mechanical planarization process is a crucial step, polished copper surface will have a large number of abrasive polishing liquid (silica or alumina) and organic residues, organic residues are mainly three benzo triazole (BTA).BTA residues leads to hydrophobic copper surface, abrasive effect the removal effect of medium. The breakdown leads to poor device stability. Aiming at the process of cleaning and removal of benzene three triazole (BTA) made a detailed analysis of the problems of BTA in copper CMP The effect and principle of.BTA adsorption and Cu reaction in Cu-BTA, Cu-BTA has a complex structure, difficult to dissolve in the copper surface. This paper presents a copper polishing can effectively remove BTA and Cu-BTA after alkaline cleaning agent, and the composition and concentration of cleaning liquid are studied. The cleaning agent mainly includes alkaline chelating agent and non-ionic surfactant. First of all, using concentration and soaking time on the BTA to do the analysis, contact angle test, metallographic microscope and Fourier transform infrared spectroscopy BTA tests showed that the best growth conditions. Then, by single factor experiment chelating agent on the removal of BTA. Through static contact angle measurement. The corrosion rate of electrochemical test and KOH experiment that chelating agents play a major role in the removal of BTA, at the same time that the chelator concentration range of BTA removal effect is good. The active agent was weak acidic active agent, by single factor experiment The removal of BTA play a supporting role, the removal effect is characterized by the contact angle test and static corrosion rate. Finally, the cleaning agent to remove BTA and other pollutants effect by the contact angle test results, the static corrosion rate and scanning electron microscopy. The BTA removal rate of acid or alkaline cleaning agent than neutral cleaning agent is more effective. Alkaline cleaning agent in this paper has high pH value, low concentration, does not contain TMAH, environmental advantages. Through experiments, the cleaning liquid chelating agent concentration should not be higher than 200ppm, the concentration of surfactant is higher than 5000ppm, the cleaning liquid ratio still needs further research.

【學(xué)位授予單位】：河北工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN405.97

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

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本文編號：1383379