本文關(guān)鍵詞：基于ZnO量子點(diǎn)的異質(zhì)結(jié)構(gòu)可控制備和光學(xué)性質(zhì)研究　出處：《南昌航空大學(xué)》2016年碩士論文　論文類(lèi)型：學(xué)位論文

  更多相關(guān)文章： CdS/ZnO異質(zhì)結(jié)構(gòu) ZnS/ZnO異質(zhì)結(jié)構(gòu) CuS花狀結(jié)構(gòu) 光學(xué)特性 光催化 電化學(xué)

【摘要】：半導(dǎo)體異質(zhì)結(jié)構(gòu)納米材料在光探測(cè)、光催化和太陽(yáng)能電池等方面具有廣泛的、潛在的應(yīng)用。本文主要在兩種不同的納米帶上生長(zhǎng)ZnO量子點(diǎn),構(gòu)成異質(zhì)結(jié)構(gòu),并研究了異質(zhì)結(jié)構(gòu)的光學(xué)特性。另外,CuS是一種重要的II-VI族半導(dǎo)體材料,在儲(chǔ)能器件等方面有潛在應(yīng)用,本文采用水熱發(fā)成功合成了CuS微米花結(jié)構(gòu),采用電化學(xué)方法研究了基于CuS超級(jí)電容的充放電性能,為其在超級(jí)電容器方面的應(yīng)用奠定基礎(chǔ)。主要研究?jī)?nèi)容和結(jié)論如下:(1)CdS/ZnO異質(zhì)結(jié)構(gòu)及其光學(xué)性質(zhì)研究。首先采用熱蒸發(fā)法制備基底CdS納米帶,接著以CdS納米帶為基底,采用熱分解乙酸鋅溶液的方法成功制備了CdS/ZnO一維異質(zhì)結(jié)構(gòu)。通過(guò)乙酸鋅濃度、熱分解溫度以及反應(yīng)時(shí)間等參數(shù)的優(yōu)化,有效地控制在納米帶表面生長(zhǎng)ZnO電子點(diǎn)的尺寸和分布。通過(guò)XRD,FESEM和TEM等測(cè)試,探索得到了影響ZnO量子點(diǎn)尺寸和分布的最佳生長(zhǎng)條件。室溫PL光譜測(cè)試結(jié)果表明:CdS/ZnO異質(zhì)結(jié)構(gòu)在508.95nm和699.69nm處有兩個(gè)發(fā)光帶,分別對(duì)應(yīng)于本征發(fā)射和缺陷發(fā)射。與CdS納米帶的光致發(fā)光譜相比,發(fā)生了明顯的紅移現(xiàn)象,且本征發(fā)射峰明顯增強(qiáng),而缺陷發(fā)射峰在逐漸減弱。拉曼光譜測(cè)試表明,CdS/ZnO異質(zhì)結(jié)構(gòu)兩個(gè)頻移峰中心位于299.11cm-1和601.97cm-1,與CdS納米帶相比,其峰位向低波數(shù)方向發(fā)生了移動(dòng),即發(fā)生了紅移現(xiàn)象。(2)CdS/ZnO異質(zhì)結(jié)構(gòu)光催化性能研究。通過(guò)降解10mg/L的羅丹明B溶液研究了CdS/ZnO異質(zhì)結(jié)構(gòu)的光催化性能。當(dāng)在紫外可見(jiàn)光下照射35min時(shí),CdS/ZnO異質(zhì)結(jié)構(gòu)一定濃度的羅丹明B溶液的兩次降解率分別為97.62%和92.18%,與CdS納米帶對(duì)相同濃度的羅丹明B溶液的降解率90.94%和82.01%相比,光催化效率明顯提高,且光腐蝕現(xiàn)象降低。這說(shuō)明Zn O量子點(diǎn)擴(kuò)展了納米帶的光響應(yīng)范圍,并且通過(guò)半導(dǎo)體復(fù)合,CdS激發(fā)產(chǎn)生的光生電子能有效地轉(zhuǎn)移到ZnO的導(dǎo)帶,從而實(shí)現(xiàn)光生電子空穴對(duì)的有效分離,提高了光催化活性。(3)ZnS/ZnO異質(zhì)結(jié)構(gòu)及其光學(xué)性質(zhì)研究。采用相同方法,在ZnS納米帶表面成功生長(zhǎng)ZnO量子點(diǎn),構(gòu)成ZnS/ZnO異質(zhì)結(jié)構(gòu)。借助于XRD,EDS,FESEM及TEM測(cè)試技術(shù)對(duì)樣品的形貌和結(jié)構(gòu)進(jìn)行表征分析。研究了ZnS/ZnO異質(zhì)結(jié)構(gòu)的光學(xué)性能。研究結(jié)果表明:采用乙酸鋅熱分解的方法,可以有效地實(shí)現(xiàn)在不同半導(dǎo)體納米帶上生長(zhǎng)ZnO量子點(diǎn),控制量子點(diǎn)的分布和尺寸。(4)利用水熱法,以硝酸銅和硫脲為原材料,成功合成了CuS花狀結(jié)構(gòu)。通過(guò)FESEM觀察其形貌,分析了其生長(zhǎng)機(jī)制。發(fā)現(xiàn)CuS花狀結(jié)構(gòu)是由納米片聚集而形成,粒徑約為2um,分布均勻。通過(guò)循環(huán)伏安法,循環(huán)穩(wěn)定性測(cè)試以及交流阻抗譜的測(cè)試研究了CuS電極的電化學(xué)性能。當(dāng)掃描速率為5mv/s時(shí),CuS電極的比電容為170.948F/g,相比于文獻(xiàn)報(bào)道的基于CuS的電容器,本文具有更高的比電容和循環(huán)穩(wěn)定性。
[Abstract]:Semiconductor heterostructure nanomaterials have a wide range of potential applications in light detection, photocatalysis and solar cells. In this paper, ZnO quantum dots are grown on two different nanoscale bands to form a heterostructure, and the optical properties of the heterostructures are studied. In addition, CuS is a kind of important II-VI semiconductor materials have potential applications in energy storage devices, the water heat synthesis of CuS micron flower structure, studied the charge discharge performance of CuS based on super capacitor by electrochemical method, lay the foundation for its application in the super capacitor. The main contents and conclusions are as follows: (1) the study of CdS/ZnO heterostructure and its optical properties. First, the substrate CdS nanobelts were prepared by thermal evaporation. Then, the one-dimensional heterostructure of CdS/ZnO was successfully prepared by thermal decomposition of zinc acetate solution on the basis of CdS nanobelts. By optimizing the concentration of zinc acetate, thermal decomposition temperature and reaction time, the size and distribution of ZnO electron points on the surface of nanoscale have been effectively controlled. The optimum growth conditions for the size and distribution of ZnO quantum dots were investigated by XRD, FESEM and TEM tests. The room temperature PL spectra test results show that the CdS/ZnO heterostructures have two luminescent bands at 508.95nm and 699.69nm, which correspond to the intrinsic emission and the defect emission respectively. With the CdS nanobelts photoluminescence spectra compared to red shift phenomenon, and then the peaks increased significantly, but the defect emission peak gradually weakened. Raman spectra show that CdS/ZnO heterostructure two frequency peak centered at 299.11cm-1 and 601.97cm-1, compared with CdS nanobelts, shifted the peak wave number direction, namely red shift phenomenon. (2) study on the photocatalytic properties of CdS/ZnO heterostructure. The photocatalytic properties of CdS/ZnO heterostructures were studied by Luo Danming B solution degrading 10mg/L. When in the ultraviolet and visible light irradiation 35min, the degradation rate of B solution two times Luo Danming CdS/ZnO heterostructure concentrations were 97.62% and 92.18%, Luo Danming on the same concentration of B solution and CdS nanobelts degradation rate of 90.94% and 82.01% compared to the photocatalytic efficiency is improved obviously, and reduce the corrosion phenomenon of light. This indicates that Zn O quantum dots extend the optical response range of nanobelts, and the photogenerated electrons generated by CdS excitation can be effectively transferred to ZnO conduction band through semiconductor recombination, so as to effectively separate the photoelectron hole pairs and enhance the photocatalytic activity. (3) the study of ZnS/ZnO heterostructure and its optical properties. Using the same method, the ZnO quantum dots were successfully grown on the surface of the ZnS nanoscale, and the ZnS/ZnO heterostructure was formed. The morphology and structure of the samples were characterized by XRD, EDS, FESEM and TEM. The optical properties of ZnS/ZnO heterostructures are studied. The results show that the thermal decomposition of zinc acetate can effectively achieve the growth of ZnO quantum dots on different semiconductor nanobelts and control the distribution and size of quantum dots. (4) by hydrothermal method, using copper nitrate and thiourea as raw materials, synthesis of CuS flower like structure. The morphology was observed by FESEM and its growth mechanism was analyzed. It is found that the flower structure of CuS is formed by the aggregation of nanoscale, and the particle size is about 2um, and the distribution is uniform. The electrochemical performance of the CuS electrode was studied by cyclic voltammetry, cyclic stability test and AC impedance spectroscopy. When the scanning rate is 5mv/s, the specific capacitance of CuS electrode is 170.948F/g. Compared with the CuS based capacitor reported in the literature, this paper has higher specific capacitance and cycle stability.
【學(xué)位授予單位】：南昌航空大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類(lèi)號(hào)】：O471.1;TB383.1

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