本文關(guān)鍵詞：碳化硅MOSFET的特性及應(yīng)用研究　出處：《安徽工業(yè)大學(xué)》2016年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 碳化硅 驅(qū)動(dòng)電路 升壓斬波電路 結(jié)溫 串并聯(lián)

【摘要】：與硅、砷化鎵相比,碳化硅作為第三代半導(dǎo)體材料主要成員之一,具有寬禁帶、高熱導(dǎo)率、高電子飽和漂移速率等特性。以SiC MOSFET為例,開(kāi)關(guān)頻率高、耐高溫和低導(dǎo)通電阻等特性使得SiC MOSFET深受高電壓大功率開(kāi)關(guān)設(shè)備的青睞。本文對(duì)SiC MOSFET的靜態(tài)特性及開(kāi)關(guān)特性進(jìn)行分析,通過(guò)分析來(lái)選取論文研究所需要的SiC MOSFET型號(hào)。到目前為止,國(guó)內(nèi)SiC MOSFET方面還處于研究初階段,并沒(méi)有非常成熟的驅(qū)動(dòng)電路。本文圍繞所選型號(hào)的SiC MOSFET進(jìn)行驅(qū)動(dòng)電路設(shè)計(jì),以期望使SiC MOSFET得到理想的驅(qū)動(dòng)波形使其導(dǎo)通關(guān)斷;同時(shí),本文以升壓斬波拓?fù)潆娐窞榛A(chǔ),設(shè)計(jì)兩路BOOST并聯(lián)電路,一路為碳化硅功率器件,另一路為硅基功率器件,在一定的測(cè)試環(huán)境下進(jìn)行開(kāi)關(guān)實(shí)驗(yàn)及結(jié)溫實(shí)驗(yàn)。實(shí)驗(yàn)結(jié)果不僅驗(yàn)證了驅(qū)動(dòng)電路設(shè)計(jì)的可行性,還通過(guò)實(shí)驗(yàn)數(shù)據(jù)對(duì)比證明SiC MOSFET在開(kāi)關(guān)頻率、導(dǎo)通關(guān)斷及結(jié)溫方面較Si MOSFET具有優(yōu)越性。以往的多個(gè)MOSFET串并聯(lián)都是利用DSP或者其他外接設(shè)備輸出多路PWM波實(shí)現(xiàn)單對(duì)單驅(qū)動(dòng)功率器件的導(dǎo)通關(guān)斷。但是這種情況下,回路的不對(duì)稱性會(huì)造成驅(qū)動(dòng)信號(hào)到達(dá)柵極的時(shí)間不一致而致使MOSFET導(dǎo)通關(guān)斷時(shí)時(shí)間不一致。通過(guò)分析一些已經(jīng)發(fā)表的關(guān)于MOSFET串并聯(lián)的研究,在他們研究的基礎(chǔ)上提出一種易于驅(qū)動(dòng)串聯(lián)拓?fù)?該拓?fù)淇梢詫?shí)現(xiàn)多個(gè)MOSFET的串聯(lián)僅需單個(gè)外部驅(qū)動(dòng),這樣就可以解決在串聯(lián)中由于驅(qū)動(dòng)信號(hào)到達(dá)柵極時(shí)間不一致而導(dǎo)致的導(dǎo)通關(guān)斷時(shí)間不同步,并將其應(yīng)用到升壓斬波電路中。
[Abstract]:Compared with silicon and gallium arsenide, silicon carbide is a main member of the third generation semiconductor materials. It has wide band gap, high thermal conductivity and high electron saturation drift rate. Taking SiC MOSFET as an example, the characteristics of high switching frequency, high temperature resistance and low conduction resistance make SiC MOSFET popular with high voltage and high-power switching equipment. In this paper, the static and switching characteristics of SiC MOSFET are analyzed, and the SiC MOSFET model is selected by the analysis of the paper. So far, the domestic SiC MOSFET is still in the initial stage of research, and there is no very mature drive circuit. The SiC MOSFET on the selected model of driving circuit design, in order to make the SiC MOSFET get the ideal driving waveform which is turned off; at the same time, based on the boost chopper circuit topology, the design of two parallel BOOST circuit is a path for the SiC power devices, another way for silicon based power devices, switches the experimental and experimental test in junction temperature environment. The experimental results not only verify the feasibility of the drive circuit design, but also prove that SiC MOSFET has advantages over Si MOSFET in terms of switching frequency, conduction turn off and junction temperature through experimental data comparison. The previous multiple MOSFET series parallel connection is to use DSP or other external devices to output multiple PWM waves to achieve single - to - single drive power devices. However, in this case, the asymmetry of the loop will cause the time of the drive signal to reach the gate, which causes the time of the MOSFET to turn off the off time. Through the analysis of some published studies on MOSFET series parallel, on the basis of their research put forward a kind of easy driving series series topology, only a single external drive to achieve a number of MOSFET the topology, so that it can solve the guide clearance in the series due to the driving signal to reach the gate time inconsistent fault time synchronization, and its application to boost chopper circuit.
【學(xué)位授予單位】：安徽工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2016
【分類號(hào)】：TN386

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