本文關(guān)鍵詞：190GHz三倍頻器研究　出處：《電子科技大學(xué)》2016年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 太赫茲 肖特基二極管 三倍頻 同向并聯(lián) 反向并聯(lián)

【摘要】：太赫茲技術(shù)在電子對抗、寬帶通信、醫(yī)學(xué)成像、天文學(xué)和安全監(jiān)測等諸多領(lǐng)域都有重要的作用。目前,太赫茲系統(tǒng)的發(fā)展主要受限于缺少高靈敏探測器和有效的輻射源,因此,太赫茲頻率源的研究是重要課題之一。產(chǎn)生太赫茲輻射源的方法有很多,其中固態(tài)太赫茲輻射源以半導(dǎo)體技術(shù)為支撐,憑借室溫工作環(huán)境、連續(xù)波、頻譜純度高、結(jié)構(gòu)較簡單、體積小、成本低及可靠性高等優(yōu)勢,在太赫茲領(lǐng)域發(fā)揮著重要作用。本課題針對太赫茲倍頻器進(jìn)行研究,在深入理解及掌握倍頻器原理的基礎(chǔ)上,主要針對190GHz三倍頻器進(jìn)行研究。電路以厚度為50um的石英作為襯底,采用多種太赫茲肖特基二極管作為核心部件,基于反向并聯(lián)和同向并聯(lián)結(jié)構(gòu)等不同方法來實(shí)現(xiàn)。論文結(jié)合HFSS有限元法和ADS諧波平衡法進(jìn)行聯(lián)合仿真,分別優(yōu)化輸入輸出探針過渡、輸入CMRC低通濾波器、輸入輸出匹配網(wǎng)絡(luò)、直流偏置電路及整體電路,以實(shí)現(xiàn)更高的輸出功率和倍頻效率。實(shí)驗(yàn)研究顯示,基于DBES105a二極管同向并聯(lián)結(jié)構(gòu)的190GHz三倍頻器,180-210GHz范圍內(nèi)倍頻效率大于1.3%,最大倍頻效率為1.64%,最大輸出功率為1mW;基于DBES105a二極管反向并聯(lián)結(jié)構(gòu)的190GHz三倍頻器,159-177GHz范圍內(nèi)倍頻效率大于0.6%,最大倍頻效率為1.29%,最大輸出功率為0.95mW;基于中電13所阻性管結(jié)構(gòu)的190GHz三倍頻器,165-210GHz范圍內(nèi)倍頻效率大于0.6%,最大倍頻效率為1%,最大輸出功率為0.057mW;基于RAL容性管結(jié)構(gòu)的190GHz三倍頻器仿真結(jié)果顯示,186-192GHz范圍內(nèi)倍頻效率超過15%,最大倍頻效率為25%,最大輸出功率為20mW。本課題為某預(yù)研項(xiàng)目中的380GHz分諧波混頻器提供本振驅(qū)動源,并為后續(xù)研究太赫茲更高頻段的倍頻器和單片集成電路奠定基礎(chǔ)。
[Abstract]:Terahertz technology plays an important role in many fields, such as electronic countermeasures, broadband communication, medical imaging, astronomy and safety monitoring. At present, the development of terahertz system is mainly restricted by the lack of highly sensitive detectors and effective radiation sources. Therefore, the research of terahertz frequency source is one of the important topics. There are many methods of terahertz radiation source, wherein a solid terahertz radiation source in semiconductor technology, with room temperature environment, continuous wave, high spectral purity, simple structure, small volume, low cost and high reliability advantages, plays an important role in the field of terahertz. This subject is aimed at the research of terahertz frequency doubler. On the basis of understanding and mastering the principle of frequency doubler, 190GHz three frequency doubler is mainly studied. The circuit is made of quartz with a thickness of 50um, and a variety of terahertz Schottky diodes are used as the core components. The paper combines HFSS finite element method and ADS harmonic balance method to carry out co simulation, optimizing input and output probe transition, input CMRC low pass filter, input and output matching network, DC bias circuit and the whole circuit respectively, so as to achieve higher output power and frequency doubling efficiency. The experimental research shows that the DBES105a diode is parallel with the structure of the 190GHz three frequency multiplier based on the range of 180-210GHz frequency doubling efficiency is greater than 1.3%, the maximum conversion efficiency is 1.64%, the maximum output power is 1mW; DBES105a diode reverse parallel structure 190GHz three multiplier based on the range of 159-177GHz frequency doubling efficiency is greater than 0.6%, the maximum conversion efficiency is 1.29%, the maximum the output power of 0.95mW; 13 in electrical resistance tube structure 190GHz three frequency multiplier based on the range of 165-210GHz frequency doubling efficiency is greater than 0.6%, the maximum conversion efficiency is 1%, the maximum output power of 0.057mW; RAL capacitive tube structure 190GHz three frequency multiplier based simulation results show that the range of 186-192GHz frequency doubling efficiency of more than 15%, the maximum the SHG efficiency is 25%, the maximum output power is 20mW. This project provides a local oscillator driver for a 380GHz sub harmonic mixer in a pre research project, and lays the foundation for subsequent research of THz and higher frequency doublers and monolithic integrated circuits.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2016
【分類號】：TN771

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本文編號：1338965