發(fā)布時(shí)間：2019-07-09 08:29

【摘要】：將量子阱結(jié)構(gòu)引入到單結(jié)GaAs太陽能電池中能夠有效擴(kuò)展吸收光譜.為了研究量子阱結(jié)構(gòu)在GaAs太陽能電池中的作用機(jī)理,本文采用實(shí)驗(yàn)和理論的方法研究了InGaAs/GaAsP量子阱結(jié)構(gòu)對(duì)電池量子效率的影響.實(shí)驗(yàn)結(jié)果表明,量子阱結(jié)構(gòu)的窄帶隙阱層材料將電池的吸收光譜從890 nm擴(kuò)展到1000 nm.同時(shí),量子阱結(jié)構(gòu)的引入提高了680—890 nm波長范圍內(nèi)的量子效率,降低了波長在680 nm以下的量子效率.通過計(jì)算得到的量子阱結(jié)構(gòu)和GaAs材料的光吸收系數(shù),可以用來解釋量子阱結(jié)構(gòu)對(duì)太陽能電池量子效率的影響.
[Abstract]:The introduction of quantum well structure into single junction GaAs solar cells can effectively expand the absorption spectrum. In order to study the mechanism of quantum well structure in GaAs solar cells, the effect of InGaAs/GaAsP quantum well structure on the quantum efficiency of InGaAs/GaAsP solar cells was studied by experimental and theoretical methods. The experimental results show that the absorption spectrum of the battery is extended from 890 nm to 1000 nm. by the narrow band gap well layer material with quantum well structure. At the same time, the introduction of quantum well structure improves the quantum efficiency in the wavelength range of 680 鈮，

本文編號(hào)：2512020