【摘要】：非晶硅薄膜太陽能電池具有制備成本低,可低溫沉積,適用于柔性襯底等優(yōu)勢,是今后第三代電池發(fā)展的強(qiáng)力候選之一。然而,傳統(tǒng)結(jié)構(gòu)的電池,如單結(jié)非晶硅電池、雙結(jié)非晶硅電池其固有的特點(diǎn)限制著非晶硅電池的轉(zhuǎn)換效率,影響著非晶硅電池的發(fā)展,本文提出了一種帶有多層吸收層的非晶硅太陽能電池。從理論上分析了非晶硅電池各個(gè)層參數(shù)對(duì)電池轉(zhuǎn)換效率的影響,對(duì)雙結(jié)電池和多層吸收層非晶硅電池做出對(duì)比,分析了其效率提高的原因。同時(shí)利用PECVD法制備了電池的雙層吸收層。此外,還制備了非晶硅表面陷光結(jié)構(gòu),分析了納秒激光對(duì)吸光結(jié)構(gòu)的影響。本文的主要研究內(nèi)容如下:優(yōu)化了單結(jié)非晶硅太陽能電池,得到了轉(zhuǎn)換效率為11%的單結(jié)非晶硅太陽能電池。在單結(jié)電池的基礎(chǔ)上,模擬出雙結(jié)電池的轉(zhuǎn)換效率為11.281%,建立了吸收層為四層的非晶硅電池的模型,得到轉(zhuǎn)換效率為13.727%的太陽能電池,其在近紅外波段有著明顯的光譜響應(yīng),理論上分析了多層吸收層電池優(yōu)于傳統(tǒng)電池的效率的原因。針對(duì)電池表面對(duì)太陽光反射的損失,本文制備了具有陷光結(jié)構(gòu)的非晶硅薄膜,分析了在不同氣氛條件、不同激光能量及不同掃描速度下,對(duì)薄膜表面結(jié)構(gòu)及光學(xué)性質(zhì)的影響。得到了在六氟化硫氣氛中,能量為3mJ/cm2及掃描速度為0.4?m/s下薄膜的反射率最低。制備了非晶硅太陽能電池的雙吸收層結(jié)構(gòu),先利用PECVD法在不同腔內(nèi)壓強(qiáng)下制備非晶硅薄膜,分析了不同壓強(qiáng)下薄膜的光吸收特性及傅里葉紅外譜。得到了在壓強(qiáng)為80pa下薄膜的光學(xué)特性最優(yōu)。在此基礎(chǔ)上進(jìn)行不同氣氛條件的激光退火。得到了在六氟化硫下雙層結(jié)構(gòu)薄膜在700nm-1100nm近紅外區(qū)有明顯的吸收。
[Abstract]:Amorphous silicon thin film solar cells have the advantages of low preparation cost, low temperature deposition and suitable for flexible Substrates. Amorphous silicon thin film solar cells are one of the powerful candidates for the development of the third generation batteries in the future. However, traditional batteries, such as single-junction amorphous silicon cells, double-junction amorphous silicon cells have inherent characteristics that limit the conversion efficiency of amorphous silicon cells and affect the development of amorphous silicon cells. In this paper, an amorphous silicon solar cell with multi-layer absorption layer is proposed. The influence of various layer parameters of amorphous silicon cell on the conversion efficiency of amorphous silicon cell is analyzed theoretically. The double junction battery and multi-layer absorption layer amorphous silicon cell are compared, and the reasons for the improvement of the efficiency are analyzed. At the same time, the double layer absorption layer of the battery was prepared by PECVD method. In addition, the surface notch structure of amorphous silicon was also prepared, and the effect of nanosecond laser on the absorption structure was analyzed. The main research contents of this paper are as follows: the single-junction amorphous silicon solar cells are optimized, and the single-junction amorphous silicon solar cells with conversion efficiency of 11% are obtained. On the basis of single junction cell, the conversion efficiency of double junction cell is 11.281%. The model of amorphous silicon cell with four layers of absorption layer is established, and the solar cell with conversion efficiency of 13.727% is obtained. It has obvious spectral response in the near infrared band. The reason why the multi-layer absorption layer battery is superior to the traditional battery is analyzed theoretically. In view of the loss of solar light reflection on the surface of the battery, amorphous silicon thin films with trapping structure were prepared in this paper. the effects of different atmosphere conditions, different laser energy and scanning speed on the surface structure and optical properties of the films were analyzed. The reflectivity of the thin films with energy of 3mJ/cm2 and scanning speed of 0.4?m/s is the lowest in sulfur hexafluoride atmosphere. The double absorption layer structure of amorphous silicon solar cells was prepared. Amorphous silicon thin films were prepared by PECVD method at different intracavity pressures. The optical absorption properties and Fourier infrared spectra of the films at different pressures were analyzed. The optical properties of the films are obtained when the pressure is 80pa. On this basis, laser annealing under different atmosphere conditions was carried out. It is obtained that the bilayer structure thin films have obvious absorption in the near infrared region of 700nm-1100nm under sulfur hexafluoride.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM914.4

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 劉汝軍;;非晶硅材料及其應(yīng)用[J];山東建材學(xué)院學(xué)報(bào);1990年01期

2 葉雅谷;非晶硅的光致發(fā)光疲勞效應(yīng)和Staebler-Wronski效應(yīng)[J];太陽能學(xué)報(bào);1985年02期

3 談一申;;日本三洋研制成折疊式非晶硅大陽能電池[J];能源工程;1987年02期

4 孫金壇 ,叢培金;制造非晶硅鍺合金膜的新技術(shù)[J];合肥工業(yè)大學(xué)學(xué)報(bào)(自然科學(xué)版);1989年02期

5 袁加勇,陳鈺清,陳曾濟(jì),王穎;激光化學(xué)氣相沉積非晶硅[J];浙江大學(xué)學(xué)報(bào)(自然科學(xué)版);1990年03期

6 錢景華,邵其捚,張鈺蓉,吳小鳳,張阿根,張龍興;非晶硅中氟的濃度分布[J];核技術(shù);1990年02期

7 劉伯飛;白立沙;張德坤;魏長春;孫建;趙穎;張曉丹;;基于光管理和帶隙梯度的高效非晶硅鍺電池光電結(jié)構(gòu)設(shè)計(jì)[J];太陽能學(xué)報(bào);2013年12期

8 曾柏川;;非晶硅和非晶硅靶攝像管[J];光學(xué)機(jī)械;1986年04期

9 陳義,杜開瑛;非晶硅低溫氧化工藝的研究[J];四川大學(xué)學(xué)報(bào)(自然科學(xué)版);1993年04期

10 楊謹(jǐn)福;非晶硅在太陽能利用方面取得成功[J];稀有金屬;1984年06期

相關(guān)會(huì)議論文 前6條

1 徐艷月;張世斌;刁宏偉;王永謙;廖顯伯;;氫稀釋和頻率對(duì)非晶硅沉積速率的影響[A];中國太陽能學(xué)會(huì)2001年學(xué)術(shù)會(huì)議論文摘要集[C];2001年

2 張紅娟;吳存宏;汪燕萍;金友華;任兆杏;;非晶硅薄膜太陽能電池技術(shù)進(jìn)展[A];TFC'07全國薄膜技術(shù)學(xué)術(shù)研討會(huì)論文摘要集[C];2007年

3 王爍;羅，

本文編號(hào)：2492277