【摘要】：隨著現(xiàn)代電子技術(shù)的快速發(fā)展,電子元器件逐漸趨向于微型化、片式化。目前主流的發(fā)展方向是把電阻、電容、電感與作為內(nèi)電極材料的Ag進(jìn)行低溫共燒做成具有“獨(dú)石”結(jié)構(gòu)的多層片式元器件。在電子技術(shù)向高頻化發(fā)展的今天,傳統(tǒng)的尖晶石結(jié)構(gòu)Ni-Cu-Zn鐵氧體因損耗過(guò)大已經(jīng)不能滿足其作為電感材料在甚高頻段應(yīng)用的需求。而Y型平面六角鐵氧體材料由于其結(jié)構(gòu)決定的磁晶各向異性,在甚高頻段具有較高的起始磁導(dǎo)率,高截止頻率,高品質(zhì)因數(shù),高熱穩(wěn)定性,低的磁損耗和低的介電損耗,使其有望成為多層片式電感的理想材料。本論文采用傳統(tǒng)的可用于大規(guī)模工業(yè)化生產(chǎn)的固相反應(yīng)法制備Y型平面六角鐵氧體材料。對(duì)于影響其低溫?zé)Y(jié)的配方,工藝和摻雜做了創(chuàng)新性和探索性的研究。主要內(nèi)容為:1.研究了離子摻雜對(duì)Y型平面六角鐵氧體材料低溫?zé)Y(jié)電磁性能的影響。發(fā)現(xiàn)隨著Cu含量的增加晶粒尺寸將會(huì)逐漸增加,燒結(jié)密度逐漸降低。起始磁導(dǎo)率總體隨Cu含量增加而增加。但隨著Cu含量的增加,其增加到一定程度的時(shí)候會(huì)引起損耗的突然大幅度增加。起始磁導(dǎo)率總體隨Zn含量增加而增加。但過(guò)高的Zn含量會(huì)導(dǎo)致截止頻率降低。綜合各方面參數(shù)考慮最佳配方為Ba2Co0.2Zn0.9Cu0.9Fe12O22,燒結(jié)溫度為900℃。2.為了降低燒結(jié)溫度,提高燒結(jié)致密性,研究了燒結(jié)助劑的影響。研究發(fā)現(xiàn)Bi2O3對(duì)磁導(dǎo)率變化影響不大,Bi2O3含量為2.5wt%時(shí)介電常數(shù)最小,此時(shí)介電損耗和磁損耗都低于10-2滿足研究需求。200 MHz時(shí)磁導(dǎo)率為7.98,介電常數(shù)為14.10,磁損耗1.28×10-2,介電損耗5.91×10-3。3.為了降低燒結(jié)助劑的含量,研究了BBSZ(Bi2O3-H3BO3-SiO2-ZnO)取代Bi2O3摻雜。研究發(fā)現(xiàn)摻雜0.8wt%的BBSZ就可以進(jìn)一步降低燒結(jié)溫度至860℃,較摻雜Bi2O3時(shí),產(chǎn)品磁導(dǎo)率和介電常數(shù)均有上升。
[Abstract]:With the rapid development of modern electronic technology, electronic components gradually tend to miniaturization. At present, the mainstream development direction is to make multi-layer chip components with "single stone" structure by co-firing resistance, capacitance, inductor and Ag as internal electrode material at low temperature. With the development of electronic technology to high frequency, the traditional spinel structure Ni-Cu-Zn Ferrite can not meet the needs of its application as inductor material in very high frequency band because of its excessive loss. The Y-type planar hexagonal Ferrite material has high initial permeability, high cutoff frequency, high quality factor, high thermal stability, low magnetic loss and low dielectric loss due to its structure-determined magneto-crystal anisotropy, which has high initial permeability, high cutoff frequency, high quality factor, high thermal stability, low magnetic loss and low dielectric loss. It is expected to be an ideal material for multi-layer chip inductors. In this paper, Y-type planar hexagonal Ferrite materials were prepared by traditional solid state reaction method, which can be used in large-scale industrial production. Innovative and exploratory research on the formula, process and doping of low temperature sintering has been carried out. The main contents are as follows: 1. The effect of ion doping on the electromagnetic properties of Y-type planar hexagonal Ferrite at low temperature was studied. It is found that with the increase of Cu content, the grain size will increase and the sintering density will decrease gradually. The initial permeability increases with the increase of Cu content. However, with the increase of Cu content, the loss will increase suddenly and greatly when it increases to a certain extent. The initial permeability increases with the increase of Zn content. However, excessive Zn content will lead to a decrease in the cut-off frequency. The optimum formula is that the sintering temperature of Ba2Co0.2Zn0.9Cu0.9Fe12O22, is 900鈩，

本文編號(hào)：2476285