發(fā)布時間：2019-04-20 08:40

【摘要】：近年來,導(dǎo)電氧化物(TCO, Transparent Conductive Oxide)薄膜作為透明導(dǎo)電薄膜已在薄膜研究中占據(jù)主導(dǎo)地位,是材料科學(xué)中最重要的領(lǐng)域之一。其中氧化銦錫(ITO,In2O3:Sn)薄膜是目前研究和應(yīng)用最廣泛的透明導(dǎo)電薄膜之一。ITO薄膜具有立方體鐵錳礦結(jié)構(gòu),禁帶寬度為3.5eV,具有較高的功函數(shù)。因此其具有優(yōu)異的光電特性,使其在平板液品顯示器(LCD、薄膜晶體管(TFT)制造、紅外輻射反射鏡涂層、太陽能電池透明電極以及火車飛機(jī)玻璃除霜、建筑物幕墻玻璃等方面應(yīng)用廣泛�；诖�,為滿足作為新型太陽能電池對電極的要求,制備出同時具有高可見光透過率和高電導(dǎo)率的ITO透明導(dǎo)電薄膜是本論文研究的重點(diǎn)。制備ITO薄膜的主要方法有噴霧熱解法,電子束蒸發(fā)法,溶膠-凝膠法,激光沉積法以及濺射法中的射頻磁控濺射法,直流磁控濺射法,脈沖磁控濺射法。這些方法中,脈沖磁控濺射法不僅能克服等離子體不穩(wěn)定、電弧放電、高沉積溫度的缺點(diǎn),而且沉積速率高均勻性好,可以在低溫下較好的濺射于基底上。實驗采用脈沖磁控濺射技術(shù)在普通載玻片玻璃、石英玻璃上制備了ITO透明導(dǎo)電薄膜。通過X射線衍射儀(XRD)、掃描電鏡(SEM)對ITO薄膜的微觀結(jié)構(gòu)及表面形貌進(jìn)行了分析,采用數(shù)字式四探針測試儀和UV-Vis分光光度計重點(diǎn)研究了濺射功率、濺射氣壓、濺射時間和襯底溫度等工藝條件對ITO薄膜的光電性能的影響,旨在通過工藝參數(shù)的變化尋求高透過率與低方塊電阻的最佳平衡點(diǎn),以提高氧化銦錫(ITO)透明導(dǎo)電膜的光電性能,并對在不同基底下的ITO薄膜進(jìn)行對比分析。在靶距為65mm,基底旋轉(zhuǎn)速度為10r/min,背低真空為5×10-3Pa的條件下,研究了濺射氣壓、濺射功率、濺射時間和襯底溫度對ITO薄膜性能的影響。研究結(jié)果表明：濺射功率45 W、濺射氣壓0.7 Pa、基底溫度為300℃、濺射時間為45 min、以普通載玻片為基底的ITO薄膜可見光透過率達(dá)85%以上,方塊電阻最小,達(dá)到5Ω/□左右�？梢詽M足作為新型太陽能電池對電極的要求,達(dá)到了課題預(yù)想的目標(biāo)。
[Abstract]:In recent years, as a transparent conductive thin film, conductive oxide (TCO, Transparent Conductive Oxide) thin film has played a leading role in thin film research and is one of the most important fields in material science. The indium tin oxide (ITO,In2O3:Sn) thin film is one of the most widely studied and applied transparent conductive films. Ito thin films have cubic ferromanganese structure with a band gap of 3.5eV and a high work function. As a result, it has excellent photoelectric properties that enable it to be used in flat panel liquid displays (LCD, thin film transistor (TFT), infrared radiation mirror coating, solar cell transparent electrodes and train and aircraft glass defrosting, Curtain wall glass and other aspects of buildings are widely used. Therefore, in order to meet the requirements of new solar cells as electrodes, the preparation of ITO transparent conductive thin films with high visible light transmittance and high conductivity is the focus of this paper. The main methods for preparing ITO films are spray pyrolysis, electron beam evaporation, sol-gel method, laser deposition, RF magnetron sputtering, DC magnetron sputtering and pulse magnetron sputtering. Among these methods, pulsed magnetron sputtering can not only overcome the disadvantages of plasma instability, arc discharge and high deposition temperature, but also have high uniformity of deposition rate, and can be sputtered on the substrate at low temperature. ITO transparent conductive thin films were prepared on glass and quartz glass by pulsed magnetron sputtering. The microstructure and surface morphology of ITO thin films were analyzed by X-ray diffractometer (XRD),) and scanning electron microscope (SEM). The sputtering power and sputtering pressure were studied by digital four-probe tester and UV-Vis spectrophotometer. The effects of sputtering time and substrate temperature on the optical and electrical properties of ITO thin films are studied in order to find the optimal balance between high transmittance and low block resistance by changing the process parameters. In order to improve the optical and electrical properties of indium tin oxide (ITO) transparent conductive film, the ITO thin films on different substrates were compared and analyzed. The effects of sputtering pressure, sputtering power, sputtering time and substrate temperature on the properties of ITO thin films were investigated under the conditions of 65 mm target distance, 10 r / min substrate rotation velocity and 5 脳 10-3Pa at low back vacuum. The effects of sputtering pressure, sputtering power, sputtering time and substrate temperature on the properties of ITO thin films were investigated. The results show that the visible light transmittance of ITO thin films with a sputtering power of 45 W, sputtering pressure of 0.7 Pa, at 300 鈩，

本文編號：2461458