【摘要】：單晶硅太陽能電池相比于其他光伏電池由于其較高的光電轉(zhuǎn)換效率仍占據(jù)著大部分光伏市場(chǎng)份額。但是高昂的成本限制單晶硅太陽電池的大規(guī)模應(yīng)用。隨著生產(chǎn)工藝技術(shù)的發(fā)展,電池硅片將越來越薄。硅片厚度越低,表面復(fù)合對(duì)光生過剩載流子的壽命影響越大。因此研究單晶硅電池的體復(fù)合與表面復(fù)合行為,對(duì)提高電池的性能具有重要意義。準(zhǔn)穩(wěn)態(tài)光電導(dǎo)技術(shù)(QSSPC)因其不破壞樣品形貌,不污染樣品,成為廣泛使用的表征樣品少子有效壽命。首先,本文基于過剩載流子的產(chǎn)生與復(fù)合理論,分析了在不同注入水平下單晶硅體壽命的變化特性,并根據(jù)單晶硅中非平衡少數(shù)載流子的一維連續(xù)性方程與少子復(fù)合理論建立數(shù)學(xué)模型,在準(zhǔn)穩(wěn)態(tài)光電導(dǎo)測(cè)試模式下通過數(shù)值法解連續(xù)性方程,最終把表面復(fù)合速率和體壽命分離開。通過計(jì)算不同電阻率的P型單晶硅發(fā)現(xiàn),在高注入情況下,比起恒定常數(shù)的體壽命,依賴于非平衡載流子濃度變化的體壽命嚴(yán)重影響載流子的分布。另外,研究不同濾光片對(duì)不同鈍化膜的N型單晶硅的有效壽命的影響,通過對(duì)比分析出前后表面的表面復(fù)合速率的不同。研究了N型單晶硅絲網(wǎng)印刷鋁漿在不同退火條件下有效壽命的變化,并找出最佳退火條件。
[Abstract]:Compared with other photovoltaic cells, monocrystalline silicon solar cells still account for most of the photovoltaic market because of their high photoelectric conversion efficiency. But the high cost limits the large-scale application of monocrystalline silicon solar cells. With the development of production technology, the silicon wafer of battery will be thinner and thinner. The lower the thickness of silicon wafer, the greater the influence of surface recombination on the lifetime of photogenerated excess carriers. Therefore, the study of bulk recombination and surface recombination of monocrystalline silicon cells is of great significance to improve the performance of the cells. Quasi-steady-state photoconductivity technique (QSSPC) is widely used to characterize the minority effective life of samples because it does not destroy the morphology of samples and pollute the samples. Firstly, based on the generation and recombination theory of excess carriers, the variation characteristics of the lifetime of single crystal silicon at different implantation levels are analyzed. According to the one-dimensional continuity equation of non-equilibrium minority carriers in monocrystalline silicon and the theory of minority carrier recombination, a mathematical model is established, and the continuity equation is solved by numerical method in quasi-steady-state photoconductivity test mode. Finally, the surface recombination rate and body life are separated. By calculating P-type monocrystalline silicon with different resistivity, it is found that the carrier distribution is seriously affected by the bulk lifetime dependent on the concentration of non-equilibrium carriers in the case of high injection, compared with the constant bulk lifetime. In addition, the effect of different filters on the effective life of N-type monocrystalline silicon with different passivation films is studied. The different surface recombination rates of the front and rear surfaces are compared and analyzed. The variation of effective life of N-type monocrystalline silicon screen printed aluminum paste under different annealing conditions was studied and the optimum annealing conditions were found.
【學(xué)位授予單位】：大連理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TM914.41

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