發(fā)布時(shí)間：2019-03-08 21:22

【摘要】：摘要：本文中對(duì)N型摻雜的單晶硅硅片進(jìn)行不同尺寸的制絨,然后使用等離子增強(qiáng)化學(xué)氣相沉積法(PECVD)在制絨后的硅片表面沉積非晶硅薄膜,非晶硅薄膜和晶體硅構(gòu)成非晶-晶體硅異質(zhì)結(jié)。作者觀察了未沉積非晶硅薄膜的硅片表面制絨尺寸,測(cè)試了制絨后晶體硅表面的反射率,以及沉積非晶硅薄膜之后表面的少子壽命,通過少子壽命來評(píng)估異質(zhì)結(jié)太陽能電池的效率水平。最后討論制絨尺寸對(duì)異質(zhì)結(jié)太陽能電池的影響,得出4-6微米的金字塔尺寸最適合所選用的非晶硅工藝。
[Abstract]:Abstract: in this paper, N-doped monocrystalline silicon wafers were prepared with different sizes, and then amorphous silicon thin films were deposited on the surface of the silicon wafers by plasma-enhanced chemical vapor deposition (PECVD), and the amorphous silicon films were deposited on the surface of the silicon wafers by plasma enhanced chemical vapor deposition (PECVD). Amorphous silicon thin films and crystalline silicon form amorphous-crystalline silicon heterojunction. The size of non-deposited amorphous silicon films on the surface of silicon wafers was observed. The reflectivity of crystalline silicon surface after velvet deposition and the minority carrier life of the surface after deposition of amorphous silicon thin films were measured. The efficiency level of heterojunction solar cells is evaluated by minority carrier lifetime. Finally, the effect of velvet size on heterojunction solar cells is discussed, and it is concluded that the pyramid size of 4? 6 渭 m is the most suitable amorphous silicon process.
【學(xué)位授予單位】：復(fù)旦大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM914.41

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本文編號(hào)：2437218