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計及寄生參數(shù)的高頻功率變換器能效分析與研究

發(fā)布時間:2019-02-23 10:00
【摘要】:隨著電力電子裝置不斷向著高頻、大功率的方向發(fā)展,高頻變換器中存在的寄生參數(shù)對其工作特性的影響也日趨顯著。開關(guān)管的開關(guān)過程中,電流變化率(di/dt)可達幾百A/μs,在寄生電感的作用下,引起過高的電壓尖峰而損壞開關(guān)器件、增加開關(guān)損耗和電磁干擾噪聲;同時,此過程中的電壓變化率(du/dt)也很高,過高的du/dt作用于寄生電容導(dǎo)致電路功耗增加并破壞電路的可靠性;此外,寄生電阻的存在則會直接造成高頻變換器的功率損耗,并對高頻響應(yīng)、測量誤差以及開關(guān)脈沖波形和穩(wěn)定運行等造成不利影響。 本文致力于計及寄生參數(shù)的高頻功率變換器能效分析與研究,內(nèi)容涵蓋了電力電子器件寄生參數(shù)的模型建立及其測量提取和行為特性分析,功率器件的損耗建模和功率變換器的效率分析等內(nèi)容。論文的主要工作如下: 分析了影響高頻變換器功率和效率的各個因素,并在計及寄生參數(shù)的基礎(chǔ)之上,提出了新型能效分析的評價指標(biāo),綜合考慮制約能效特性的各類參數(shù)對其產(chǎn)生的影響,以保證高頻變換器系統(tǒng)可以更好的實現(xiàn)高功率、高效率的能量輸出。 針對現(xiàn)有IGBT功率損耗模型或計算量太大,或計算精度不足的弊端,在計及IGBT寄生參數(shù)的前提下,詳細分析了IGBT開通和關(guān)斷過程中的等效電路圖,并逐一推導(dǎo)了相應(yīng)的損耗公式,提出了一種新型功率損耗建模方法,考慮到IGBT振蕩過程中的功率損耗,可以更加準(zhǔn)確的估算電路功耗。 以Buck變換器為例,建立了計及寄生參數(shù)的變換器效率模型并分析變換器的效率特性。采用Saber軟件進行效率仿真驗證,并利用Matlab工具箱的擬合工具對效率模型進行系數(shù)擬合,可以通過輸入、輸出功率采樣,在電路具體運行參數(shù)未知的情況下,根據(jù)效率函數(shù)模型估算變換器的效率。進一步地,逐一分析IGBT寄生參數(shù)對Buck變換器效率的影響,通過仿真測量得到輸入、輸出功率,并計算相應(yīng)的效率值。 搭建高頻大功率ZVZCS移相全橋變換器實驗平臺,測量并記錄不同輸出功率下的效率,,通過比較發(fā)現(xiàn),本文提出的計及寄生參數(shù)的功率損耗模型和效率模型較之于傳統(tǒng)的模型更加精確,且與實驗結(jié)果具有很好的一致性。
[Abstract]:With the development of power electronic devices in the direction of high frequency and high power, the influence of parasitic parameters in high frequency converters on their working characteristics is becoming more and more significant. In the switching process of the switch, the current change rate (di/dt) can reach several hundred A / 渭 s. Under the action of parasitic inductance, the voltage spike is too high and the switch device is damaged, and the switching loss and electromagnetic interference noise are increased. At the same time, the rate of voltage change (du/dt) in the process is also very high, too high du/dt effect on parasitic capacitance leads to increase the power consumption and destroy the reliability of the circuit. In addition, the existence of parasitic resistance will directly cause the power loss of the high frequency converter, and will have a negative impact on the high frequency response, measurement error, switching pulse waveform and stable operation. This paper is devoted to the energy efficiency analysis and research of high frequency power converters taking into account parasitic parameters. It covers the modeling of parasitic parameters of power electronic devices, the measurement and extraction of parasitic parameters, and the analysis of behavior characteristics. Loss modeling of power devices and efficiency analysis of power converters. The main work of this paper is as follows: the factors that affect the power and efficiency of the high frequency converter are analyzed, and based on the parasitic parameters, the evaluation index of the new energy efficiency analysis is put forward. In order to ensure the high power and high efficiency energy output of the high frequency converter system, the influence of all kinds of parameters which restrict the energy efficiency characteristics is considered synthetically in order to ensure that the high frequency converter system can achieve the high power and high efficiency energy output. In view of the disadvantages of the existing IGBT power loss model or too much calculation or insufficient calculation precision, the equivalent circuit diagram in the process of IGBT turn-on and turn-off is analyzed in detail, and the corresponding loss formulas are deduced one by one, taking into account the parasitic parameters of IGBT. A new power loss modeling method is proposed. Considering the power loss during IGBT oscillation, the power consumption can be estimated more accurately. Taking the Buck converter as an example, the efficiency model of the converter with parasitic parameters is established and the efficiency characteristics of the converter are analyzed. The efficiency is verified by Saber software, and the coefficient of the efficiency model is fitted by the fitting tool of Matlab toolbox. The efficiency model can be sampled by input and output power, and the operation parameters of the circuit are unknown. The efficiency of the converter is estimated according to the efficiency function model. Furthermore, the effect of parasitic parameters of IGBT on the efficiency of Buck converter is analyzed one by one. The input and output power is obtained by simulation measurement, and the corresponding efficiency values are calculated. The experiment platform of high-frequency and high-power ZVZCS phase-shifted full-bridge converter is built to measure and record the efficiency under different output power. The proposed power loss model and efficiency model with parasitic parameters are more accurate than the traditional model and are in good agreement with the experimental results.
【學(xué)位授予單位】:華南理工大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2014
【分類號】:TM46

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