碳化硅光導開關的制備與性能研究
發(fā)布時間：2019-01-17 10:47
【摘要】：光導開關全稱為光控光導半導體開關,因其觸發(fā)抖動小、極高的響應速度、極高的功率容量、耐壓能力強、功耗低、寄生電感電容小、動態(tài)范圍大等優(yōu)良的電學特性,加之開關體積小、結構簡單而受到國內外研究者的重視,成為脈沖功率應用技術領域的一枝新秀。碳化硅材料與傳統(tǒng)的半導體材料相比具有禁帶寬度大、擊穿場強高、介電常數大、熱導率高和抗輻射能力強等優(yōu)異性質,被認為是最適合制備超快、大功率、耐高溫的光電子器件的材料�，F在大尺寸高質量的碳化硅生長技術日趨成熟,將來必定大規(guī)模應用到脈沖功率器件、微電子器件和電力電子器件制造中。本文使用半絕緣碳化硅作為光導開關的襯底材料,兩者之間的珠聯(lián)璧合必將促進超快大功率光導開關的發(fā)展。 本文首先介紹了光導開關的研究背景、工作原理及發(fā)展歷史,研究了碳化硅材料對光導開關的影響。在大量文獻調研的基礎之上,制定了碳化硅光導開關研究的技術路線圖。根據技術路線圖,利用磁控濺射設備在n型4H-SiC襯底的(000-1)面上沉積了Ti金屬電極,研究了在退火處理過程中不同的電極放置方式對接觸性能的影響。當實驗樣品的電極面朝著硅托退火時,樣品表現出良好的歐姆接觸性能,否則就沒有歐姆接觸性質。利用X射線衍射(XRD)、X射線光電子能譜(XPS)、掃描電子顯微鏡(SEM)和原子力電子顯微鏡(AFM)對其界面相結構、組份、電極薄膜厚度和表面形貌進行了研究分析。在退火處理過程中從硅靶額外引入的硅元素對形成歐姆接觸起了關鍵作用。接著在4H-SiC的C面上制備了Si/Ti/SiC體系和Si面上制備了Ni/SiC體系的歐姆接觸,利用線性傳輸線法(TLM)計算了比接觸電阻率,并分析了表面形貌對歐姆接觸性質的影響。 本文在制備歐姆接觸的研究基礎上,在半絕緣碳化硅襯底上制備了同面橫向結構的光導開關,并對光導開關的電學性能進行了分析。針對SiC光導開關的特點,搭建了測試平臺,利用532nm波長的Nd:YAG激光器做觸發(fā)光源,著重研究了同面型橫向結構的光導開關的電學性能,獲得了開關導通電脈沖的下降沿時間小于3ns,上升沿時間小于13ns,導通電脈沖信號的脈寬穩(wěn)定在12ns,與觸發(fā)激光電脈沖信號的脈寬一致。
[Abstract]:The photoconductive switch is called optically controlled photoconductive semiconductor switch, because of its excellent electrical properties, such as low trigger jitter, high response speed, high power capacity, high voltage resistance, low power consumption, small parasitic inductance and capacitance, large dynamic range, etc. In addition, the switch is small in size, simple in structure and paid attention to by researchers at home and abroad, so it has become a new star in the field of pulse power application technology. Compared with traditional semiconductor materials, silicon carbide has many excellent properties, such as wide band gap, high breakdown field strength, large dielectric constant, high thermal conductivity and strong radiation resistance, etc. It is considered to be the most suitable for preparation of ultra-fast and high-power materials. High temperature resistant materials for optoelectronic devices. Nowadays, the technology of silicon carbide growth with large size and high quality is becoming more and more mature, and it will be used in the manufacture of pulse power devices, microelectronic devices and power electronic devices on a large scale in the future. In this paper, the semi-insulating silicon carbide is used as the substrate material for photoconductive switch. The perfect combination between the two materials will promote the development of ultra-fast and high-power photoconductive switch. In this paper, the research background, working principle and development history of photoconductive switch are introduced, and the influence of silicon carbide on photoconductive switch is studied. Based on a large amount of literature, a technical roadmap for the study of silicon carbide photoconductive switches is developed. According to the technical roadmap, Ti metal electrodes were deposited on (000-1) surfaces of n-type 4H-SiC substrates by magnetron sputtering equipment. The effects of different electrode placement methods on the contact properties during annealing were studied. When the electrode surface of the experimental sample is annealed towards the silicon holder, the sample exhibits good ohmic contact performance, otherwise, there is no ohmic contact property. The interfacial phase structure, composition, electrode film thickness and surface morphology were studied by X-ray diffraction (XRD) (XRD), X ray photoelectron spectroscopy (XPS),) scanning electron microscope (SEM) and atomic force electron microscopy (AFM). The addition of silicon element from silicon target plays a key role in the formation of ohmic contact during annealing. Then the ohmic contacts of Si/Ti/SiC system and Ni/SiC system were prepared on C plane of 4H-SiC and Ni/SiC system on Si surface. The specific contact resistivity was calculated by (TLM) method. The influence of surface morphology on ohmic contact properties was analyzed. Based on the study of ohmic contact, the photoconductive switch with the same plane transverse structure was fabricated on semi-insulating silicon carbide substrate, and the electrical properties of the photoconductive switch were analyzed. According to the characteristics of SiC photoconductive switch, a testing platform is set up. The electrical properties of the photoconductive switch with the same plane transverse structure are studied by using the Nd:YAG laser of 532nm wavelength as the trigger light source. It is obtained that the duration of the on-off pulse is less than 3ns, the rising edge time is less than 13ns, and the pulse width of the turn-on pulse signal is stable at 12ns, which is the same as the pulse width of the triggered laser pulse signal.
【學位授予單位】：上海師范大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TM564
本文編號：2409984
[Abstract]:The photoconductive switch is called optically controlled photoconductive semiconductor switch, because of its excellent electrical properties, such as low trigger jitter, high response speed, high power capacity, high voltage resistance, low power consumption, small parasitic inductance and capacitance, large dynamic range, etc. In addition, the switch is small in size, simple in structure and paid attention to by researchers at home and abroad, so it has become a new star in the field of pulse power application technology. Compared with traditional semiconductor materials, silicon carbide has many excellent properties, such as wide band gap, high breakdown field strength, large dielectric constant, high thermal conductivity and strong radiation resistance, etc. It is considered to be the most suitable for preparation of ultra-fast and high-power materials. High temperature resistant materials for optoelectronic devices. Nowadays, the technology of silicon carbide growth with large size and high quality is becoming more and more mature, and it will be used in the manufacture of pulse power devices, microelectronic devices and power electronic devices on a large scale in the future. In this paper, the semi-insulating silicon carbide is used as the substrate material for photoconductive switch. The perfect combination between the two materials will promote the development of ultra-fast and high-power photoconductive switch. In this paper, the research background, working principle and development history of photoconductive switch are introduced, and the influence of silicon carbide on photoconductive switch is studied. Based on a large amount of literature, a technical roadmap for the study of silicon carbide photoconductive switches is developed. According to the technical roadmap, Ti metal electrodes were deposited on (000-1) surfaces of n-type 4H-SiC substrates by magnetron sputtering equipment. The effects of different electrode placement methods on the contact properties during annealing were studied. When the electrode surface of the experimental sample is annealed towards the silicon holder, the sample exhibits good ohmic contact performance, otherwise, there is no ohmic contact property. The interfacial phase structure, composition, electrode film thickness and surface morphology were studied by X-ray diffraction (XRD) (XRD), X ray photoelectron spectroscopy (XPS),) scanning electron microscope (SEM) and atomic force electron microscopy (AFM). The addition of silicon element from silicon target plays a key role in the formation of ohmic contact during annealing. Then the ohmic contacts of Si/Ti/SiC system and Ni/SiC system were prepared on C plane of 4H-SiC and Ni/SiC system on Si surface. The specific contact resistivity was calculated by (TLM) method. The influence of surface morphology on ohmic contact properties was analyzed. Based on the study of ohmic contact, the photoconductive switch with the same plane transverse structure was fabricated on semi-insulating silicon carbide substrate, and the electrical properties of the photoconductive switch were analyzed. According to the characteristics of SiC photoconductive switch, a testing platform is set up. The electrical properties of the photoconductive switch with the same plane transverse structure are studied by using the Nd:YAG laser of 532nm wavelength as the trigger light source. It is obtained that the duration of the on-off pulse is less than 3ns, the rising edge time is less than 13ns, and the pulse width of the turn-on pulse signal is stable at 12ns, which is the same as the pulse width of the triggered laser pulse signal.
【學位授予單位】：上海師范大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TM564
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，本文編號：2409984
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