新型Ⅱ-Ⅵ族半導(dǎo)體分級納米陣列結(jié)構(gòu)及光伏電池研究
發(fā)布時間:2018-12-17 23:27
【摘要】:在過去的幾十年里,II-VI族納米材料由于其有別于塊體材料的新奇特性以及巨大的應(yīng)用潛力而深受研究者的青睞。特別地,一維的II-VI族半導(dǎo)體納米線陣列由于其高度有序的幾何結(jié)構(gòu)以及可作為未來納米功能器件的結(jié)構(gòu)基元而得到格外的關(guān)注。本文以一維半導(dǎo)體納米線陣列為切入點,從納米線陣列的可控合成與組裝的角度,分別制備出以CdS納米線陣列、ZnO納米線陣列為分支結(jié)構(gòu)的分級納米陣列結(jié)構(gòu)。在納米陣列結(jié)構(gòu)的應(yīng)用方面,我們從量子點光伏電池出發(fā),結(jié)合器件對能帶結(jié)構(gòu)與光學(xué)吸收的要求,我們構(gòu)建并系統(tǒng)研究了基于陣列納米結(jié)構(gòu)的PbS量子點體異質(zhì)結(jié)型光伏電池。我們首先開發(fā)了一種低成本的PbS量子點的合成工藝;同時從量子點電池規(guī);苽涞慕嵌龋_發(fā)了量子點的提拉制膜工藝,為量子點薄膜的規(guī)模化應(yīng)用打下基礎(chǔ);最后在ZnO、TiO2納米線陣列制備的基礎(chǔ)上構(gòu)建了體異質(zhì)結(jié)型量子點光伏電池,為此類電池的研究提供了參考。 本論文的主要研究內(nèi)容如下: 1.通過電沉積的方法制備Cd的微米片陣列,并以此作為CdS納米線陣列的生長基體,結(jié)合溶劑熱反應(yīng),成功實現(xiàn)了一種新型的CdS分級納米陣列結(jié)構(gòu)的制備。分析了所制備的納米陣列結(jié)構(gòu)的形貌、結(jié)構(gòu)、成分、物相,同時,通過對反應(yīng)條件的調(diào)控以及對反應(yīng)產(chǎn)物的分析,系統(tǒng)研究了CdS納米線陣列的形核與生長特性。通過對電沉積體系的深入研究,提出了“氫氣泡”輔助的Cd微米片陣列的生長機制,為此種結(jié)構(gòu)的其它II-VI族半導(dǎo)體化合物的合成提供了有力的參考。 2.在CdS分級納米陣列結(jié)構(gòu)的合成工藝路線之上,成功實現(xiàn)了此種制備方法的推廣,,并獲得了ZnO的分級納米陣列結(jié)構(gòu)。分析了所制備的納米陣列結(jié)構(gòu)的形貌、結(jié)構(gòu)、成分、物相,研究了ZnO分級納米陣列結(jié)構(gòu)的形成機制。通過對電沉積體系的研究與分析,證實了Zn微米片陣列的生長遵循“氫氣泡”輔助生長的機制。在Zn微米片陣列的結(jié)構(gòu)參數(shù)的調(diào)控基礎(chǔ)之上,實現(xiàn)了ZnO分級納米陣列結(jié)構(gòu)的可控制備。 3.分析了PbS量子點合成的限制因素,從低成本、綠色環(huán)保的角度出發(fā),通過復(fù)合硫源的路線設(shè)計,有效地調(diào)制了硫源前驅(qū)體的活性,獲得了單分散良好的PbS量子點。分析了所得量子點的形貌、尺寸和物相,深入研究了PbS量子點的生長動力學(xué)特性。最后,為膠體合成化學(xué)中前驅(qū)體活性的調(diào)節(jié),提供了一個新的思路。 4.從提高材料利用率、規(guī);苽涞慕嵌瘸霭l(fā),開發(fā)了一種制備高質(zhì)量的量子點薄膜的提拉制膜工藝。研究了量子點濃度、提拉速度、環(huán)境濕度與溫度對量子點成膜特性的影響。在提拉制膜法的基礎(chǔ)上,以耗盡異質(zhì)結(jié)型光伏器件結(jié)構(gòu)為平臺,評價了此提拉制膜法制備的量子點薄膜的光伏特性。同時,以有序的ZnO納米線陣列為材料平臺,研究了該提拉制膜法對大粗糙度基體表面的均鍍特性;構(gòu)造了新型的“納米線-量子點”徑向結(jié)型光伏電池,研究了其光伏特性及存在的問題,為高性能徑向結(jié)型量子點光伏電池的構(gòu)建提供了參考。 5.構(gòu)造了基于PbS量子點的耗盡體異質(zhì)結(jié)型量子點光伏電池。通過水熱法合成了高度有序的ZnO納米線陣列,通過對反應(yīng)條件的控制,實現(xiàn)了ZnO納米線陣列的可控生長;利用PbS量子點作為光活性層,構(gòu)建了基于ZnO納米線陣列的耗盡體異質(zhì)結(jié)型量子點光伏電池,研究了PbS量子點的涂覆厚度對其光伏特性的影響;在ZnO納米線的基礎(chǔ)上,通過液相處理工藝,實現(xiàn)了TiO2納米線網(wǎng)絡(luò)結(jié)構(gòu)電極的制備,構(gòu)建了基于“PbS量子點-TiO2納米線網(wǎng)絡(luò)結(jié)構(gòu)電極”的耗盡體異質(zhì)結(jié)型量子點光伏電池,研究了n型結(jié)構(gòu)電極的材料選擇及其結(jié)構(gòu)參數(shù)對器件光伏特性的影響,分析了耗盡體異質(zhì)結(jié)型光伏電池的性能增強機制。
[Abstract]:In the past few decades, the Group II-VI nanomaterials have been favored by the researchers due to their novel characteristics, as distinct from the bulk materials, and the enormous potential for its application. In particular, the one-dimensional group II-VI semiconductor nanowire array is of particular interest due to its highly ordered geometry and the structural elements that can be used as a future nano-functional device. In this paper, based on the one-dimensional semiconductor nanowire array, a graded nano-array structure with a CdS nanowire array and a ZnO nanowire array as a branch structure is prepared from the angle of controllable synthesis and assembly of the nanowire array. In terms of the application of the nano-array structure, we have constructed and systematically studied the PbS quantum dot-body heterojunction type photovoltaic cell based on the array-based nano-structure, starting from the quantum dot photovoltaic cell and combining the requirements of the device to the energy band structure and the optical absorption. The method comprises the following steps of: firstly, developing a synthesis process of a low-cost PbS quantum dot; and simultaneously, developing a pull-up film process of the quantum dot from the angle of the large-scale preparation of the quantum dot cell, laying a foundation for the large-scale application of the quantum dot thin film, and finally, On the basis of the preparation of the TiO2 nanowire array, a bulk heterojunction type quantum dot photovoltaic cell is built, and a reference is provided for the research of such a battery. The main contents of this paper are as follows: under the following steps of: (1) preparing a micro-chip array of Cd by an electrodeposition method, and taking the micro-chip array as a CdS nanowire array as a growth matrix, and successfully realizing a novel CdS graded nano-array structure in combination with a solvothermal reaction; The morphology, structure, composition and phase of the prepared nano-array structure were analyzed. In this paper, the growth mechanism of the 鈥渉ydrogen bubble鈥
本文編號:2384942
[Abstract]:In the past few decades, the Group II-VI nanomaterials have been favored by the researchers due to their novel characteristics, as distinct from the bulk materials, and the enormous potential for its application. In particular, the one-dimensional group II-VI semiconductor nanowire array is of particular interest due to its highly ordered geometry and the structural elements that can be used as a future nano-functional device. In this paper, based on the one-dimensional semiconductor nanowire array, a graded nano-array structure with a CdS nanowire array and a ZnO nanowire array as a branch structure is prepared from the angle of controllable synthesis and assembly of the nanowire array. In terms of the application of the nano-array structure, we have constructed and systematically studied the PbS quantum dot-body heterojunction type photovoltaic cell based on the array-based nano-structure, starting from the quantum dot photovoltaic cell and combining the requirements of the device to the energy band structure and the optical absorption. The method comprises the following steps of: firstly, developing a synthesis process of a low-cost PbS quantum dot; and simultaneously, developing a pull-up film process of the quantum dot from the angle of the large-scale preparation of the quantum dot cell, laying a foundation for the large-scale application of the quantum dot thin film, and finally, On the basis of the preparation of the TiO2 nanowire array, a bulk heterojunction type quantum dot photovoltaic cell is built, and a reference is provided for the research of such a battery. The main contents of this paper are as follows: under the following steps of: (1) preparing a micro-chip array of Cd by an electrodeposition method, and taking the micro-chip array as a CdS nanowire array as a growth matrix, and successfully realizing a novel CdS graded nano-array structure in combination with a solvothermal reaction; The morphology, structure, composition and phase of the prepared nano-array structure were analyzed. In this paper, the growth mechanism of the 鈥渉ydrogen bubble鈥
本文編號:2384942
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