【摘要】：運用美國賓州大學發(fā)展的AMPS-1D程序模擬了P-I-N結構的納米硅薄膜太陽電池中I層、P-I界面、N-I界面的缺陷態(tài)密度對電池的輸出特性的影響。結果表明,在其他參數(shù)保持不變的情況下,隨著I層缺陷態(tài)密度的增大,I層的最佳厚度逐漸減小,且效率降低。P-I界面的缺陷態(tài)密度對電池輸出特性的影響十分顯著,隨著缺陷態(tài)密度及界面層厚度的增大,效率下降。而N-I界面態(tài)對電池的影響不大
[Abstract]:The effect of the density of defect states on the output characteristics of P-I-N nanocrystalline silicon thin film solar cells was simulated by using the AMPS-1D program developed by the University of Pennsylvania, USA. The results show that with the increase of the density of defect states in layer I, the optimum thickness of layer I decreases and the efficiency decreases when other parameters remain unchanged. The effect of the density of defect states at P-I interface on the output characteristics of the battery is very significant. With the increase of the density of defect states and the thickness of interface layer, the efficiency decreases. But the N-I interface state has little effect on the battery.
【作者單位】： 中國地質(zhì)大學(北京)工程技術學院;中國地質(zhì)大學(北京)土地科學技術學院;中國地質(zhì)大學(北京)數(shù)理學院;
【分類號】：TQ127.2;TM914.4
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本文編號：2378819