【摘要】：射頻微機電系統(tǒng)(RF MEMS)技術作為未來通信的核心技術,通過靈巧的設計,可以實現(xiàn)更復雜的功能,還具有更輕便、低能耗、低成本等特點。RF MEMS開關由于其高隔離、低損耗、小體積、易集成、優(yōu)良線性度等特性,近年來成為國內外研究熱點。完善開關設計,將其應用于可調射頻器件如可調濾波器、可重構天線、移相器等已經成為研究的趨勢。基于MEMS技術的射頻開關和基于開關的可調射頻器件在衛(wèi)星、通信系統(tǒng)、各類雷達系統(tǒng)、新概念探測設備等領域具有巨大的應用前景。 本文面向硅基共面波導(CPW) RF MEMS開關,從需求出發(fā),針對其電磁,電路和力學特性進行建模分析。通過對上、下態(tài)電容,電感和電阻的計算分析,實現(xiàn)了開關電磁參數(shù)的精確提�。唤⒘碎_關的電路模型,進行了電路模型中電參數(shù)射頻性能分析；分析計算了開關彈性系數(shù),建立了靜電驅動下的靜態(tài)和動態(tài)變形分析,并對低驅動電壓設計方法進行了研究。在對模型分析的基礎上,分析了影響開關射頻性能的因素,引入了共面波導缺陷地(DGS)結構,有效地降低了開關的諧振頻率。完成了低驅動電壓開關、高隔離度開關、高可靠性開關、穩(wěn)定電感直插式開關的設計、仿真及測試,并將其應用于模擬可調和數(shù)字可調濾波器設計中,驗證了開關設計的有效性。設計完成了兩套開關平坦化MEMS加工方案,對開關和可調濾波器進行了加工測試,分析了測試結果,驗證了理論模型,給出了工藝改進方案。 主要創(chuàng)新點如下： 1.提出了一種開關電容精確計算方法 提出了一種求解MEMS開關上態(tài)電容的方法,將帶有MEMS橋的共面波導等效成兩組微帶線,通過精確計算微帶線電容,實現(xiàn)RF MEMS開關上態(tài)電容的精確提取。其準確性在參數(shù)提取后的有限元結構仿真和電路模型仿真對比中得到了驗證。 2.構建了一種基于缺陷地結構的電感可調開關模型 在開關電磁模型分析的基礎上,提出將共面波導傳輸線的缺陷地結構引入硅基共面波導MEMS開關設計中。根據電磁參數(shù)的提取,驗證了缺陷地額外電感的引入。在不改變開關尺寸的前提下,該結構增加了開關的設計維度,為電容式開關諧振頻率的低頻化設計提供了一種有效的解決方案。通過開關的設計、仿真及測試驗證了其有效性。 3.提出了一種電容式MEMS開關射頻性能優(yōu)化設計方法 研究了開關梁幾何尺寸和梁上釋放孔對射頻性能隔離度和插入損耗的影響,分析了影響電容式開關諧振頻率的因素,包括極板相對面積、介質層間距和介電常數(shù)、梁結構本身電感和缺陷地引入電感對諧振頻率的影響,提出了一種開關射頻性能優(yōu)化設計的方法。 4.研制了多款高性能MEMS開關 根據對開關性能需求的不同,設計了兩款低驅動電壓開關,包括圓弧彎曲梁開關和雙彎曲梁開關,開關在保證隔離度的同時驅動電壓測試低于30V；兩款高隔離度電壓開關,包括糖果形開關和混合式開關,在工作頻率范圍內隔離度優(yōu)于-40dB；兩款高可靠性開關,包括仿生物神經細胞結構的仿生式和四通式開關；多款穩(wěn)定電感的直插式開關,避免了開關梁電感對諧振頻率的影響,便于電感的準確設計。開關諧振頻率設計包括Ku至Ka波段。通過理論模型分析提取了其特性參數(shù),并將其加工測試。 5.實現(xiàn)了基于MEMS開關的模擬、數(shù)字可調濾波器一體化設計 在對開關設計和參數(shù)提取的基礎上,對開關、濾波器進行一體化設計,將設計的新型低驅動電壓圓弧彎曲梁開關應用于濾波器設計,完成了基于K倒相器的模擬可調濾波器和槽線半波耦合數(shù)字可調濾波器設計。進行了可調濾波器的加工,開關驅動電壓低于30V,模擬可調頻率范圍為20.26GHz至26.15GHz,數(shù)字可調頻率為19.2GHz,19.9GHz,20.5GHz,21.7GHz。測試驗證了基于開關的可調濾波器一體化設計的有效性。 6.設計了MEMS開關平坦化工藝 提出了采用多次涂膠干法刻蝕結合膠體自流平效應的開關表面平坦化加工工藝,加工粗糙度低于100A。完成了金梁和鋁梁開關結構的加工、測試和分析。分析了測試結果,驗證了影響開關諧振頻率漂移的因素,在對開關失效分析的基礎上提出了工藝改進方案。 論文最后對研究工作進行了總結,給出了進一步研究的方向。
[Abstract]:The radio-frequency micro-electro-mechanical system (RF MEMS) technology, as the core technology of future communication, can realize more complex functions through the smart design, and also has the characteristics of light weight, low energy consumption, low cost and the like. The RF MEMS switch has become a hot spot at home and abroad due to its high isolation, low loss, small volume, easy integration and excellent linearity. The design of the switch is improved, and it can be applied to adjustable RF devices such as tunable filter, reconfigurable antenna, phase shifter and so on. The radio-frequency switch based on the MEMS technology and the adjustable radio-frequency device based on the switch have great application prospect in the fields of satellite, communication system, various radar systems, new concept detection equipment and the like. In this paper, a silicon-based coplanar waveguide (CPW) RF MEMS switch is used to model the electromagnetic, electrical and mechanical properties of a silicon-based coplanar waveguide (CPW) RF MEMS switch. Through the calculation and analysis of the capacitance, the inductance and the resistance of the upper and lower states, the accurate extraction of the electromagnetic parameters of the switch is realized, the circuit model of the switch is established, the radio frequency performance of the electrical parameters in the circuit model is analyzed, and the elastic system of the switch is calculated and calculated. The static and dynamic deformation analysis under the electrostatic drive is established, and the design method of the low-drive voltage is studied. Based on the analysis of the model, the factors affecting the radio frequency performance of the switch are analyzed, the defect of the coplanar waveguide (DGS) is introduced, and the resonance frequency of the switch is effectively reduced. The design, simulation and test of low-drive voltage switch, high-isolation switch, high-reliability switch and stable inductance-plug-in switch are completed, and it is applied to the design of the analog and harmonic digital adjustable filter, and the effective design of the switch is verified. In this paper, two sets of switch-flattening MEMS processing schemes are designed, the switch and the adjustable filter are processed and tested, the test results are analyzed, the theoretical model is verified, and the process improvement party is given. Case. Key innovations The point is as follows: 1. A switching capacitor is proposed In this paper, a method for solving the state capacitance of a MEMS switch is proposed, and the coplanar waveguide with the MEMS bridge is equivalent to two sets of microstrip lines, Calculate the capacitance of the microstrip line and realize the on-state of the RF MEMS switch The accurate extraction of the capacitance. The accuracy of the method is the simulation of the finite element structure and the simulation of the circuit model after the parameter extraction the comparison was verified. 2. A defect-based junction was built On the basis of the analysis of the electromagnetic model of the switch, the structure of the inductance-adjustable switch model is put forward to introduce the defect structure of the coplanar waveguide transmission line into the silicon-based coplanar waveguide. The design of the waveguide MEMS switch. Based on the extraction and verification of the electromagnetic parameters, Under the premise of not changing the size of the switch, the design dimension of the switch is increased, and the low-frequency design of the resonant frequency of the capacitive switch is provided. for an efficient solution. The switch is designed, simulated, True and the test verified its validity. 3. A capacitive ME is proposed The influence of the size of the switch beam and the release hole on the isolation and insertion loss of the RF performance is studied in the design of the radio frequency performance of the MS switch, and the influence of the capacitance type switch is analyzed. The factors of the vibration frequency include the relative area of the plate, the distance and the dielectric constant of the dielectric layer, the inductance of the beam structure and the effect of the induced inductance on the resonant frequency. The invention relates to a method for optimizing and designing a radio frequency performance of a switch. 4. A variety of high-performance MEMS switches are developed, which are designed with two low-drive voltage switches based on the different performance requirements of the switch, including the arc-bending beam switch and the double-bending beam switch, and the switch can drive the electric motor at the same time as the isolation degree is guaranteed. The voltage test is less than 30V; the two high-isolation voltage switches, including the candy-shaped switch and the hybrid switch, have a better isolation over-40dB in the operating frequency range; the two high-reliability switches, including the bionic type of the bionic nerve cell structure and the switch beam is avoided. the effect of the inductance on the resonance frequency is convenient for the accurate setting of the inductance, The switch resonant frequency is designed to include Ku to Ka band. The characteristic parameters are extracted by the type analysis, and the processing test is carried out. The simulation of the MEMS switch and the integrated design of the digital adjustable filter are based on the design of the switch and the parameter extraction, and the switch and the filter are integrated and designed, and the design The novel low-drive-voltage circular-arc beam switch is applied to the design of the filter, and the K-phase inverter is completed. The tunable filter and the slot line half-wave coupled digital adjustable filter are designed. The adjustable filter is processed, the driving voltage of the switch is lower than 30V, the range of the analog adjustable frequency is 20. 26GHz to 265.15GHz, and the digital adjustable frequency is 19.2GHz. 19.9GHz, 20.5GHz, 21.7GHz. The test is based on the switch-based adjustable filter. The effectiveness of the design is as follows: 6. The planarization process of MEMS switch is designed The surface of the switching surface of the flat effect is flat and the processing roughness is low. The processing, testing and analysis of the switch structure of the gold beam and the aluminum beam are completed in 100A. The results of the test are analyzed and the resonant frequency of the influence switch is verified. The factors of drift have been put forward on the basis of the analysis of the failure of the switch.
【學位授予單位】：北京郵電大學
【學位級別】：博士
【學位授予年份】：2014
【分類號】：TM564

【參考文獻】

相關期刊論文 前10條

1 袁明文;射頻微電子機械系統(tǒng)的發(fā)展與展望[J];半導體情報;2001年04期

2 梁春廣;RF MEMS技術[J];微納電子技術;2002年01期

3 張永華,丁桂甫,蔡炳初,蔣振新;發(fā)展中的RF MEMS開關技術[J];微納電子技術;2003年05期

4 嚴春早;許高斌;葉劉曉;;RF MEMS開關的發(fā)展現(xiàn)狀[J];微納電子技術;2008年11期

5 高楊;劉佳;白竹川;劉婷婷;陳營端;;低驅動電壓電容式RF MEMS開關結構設計優(yōu)化[J];微納電子技術;2009年03期

6 朱健,林金庭,林立強;DCDC—20GHz射頻MEMS開關(英文)[J];半導體學報;2001年06期

7 張正元,溫志渝,徐世六,張正番,劉玉奎,李開成,黃尚廉;多晶硅襯底上的RF MEMS開關(英文)[J];半導體學報;2003年08期

8 郭方敏,賴宗聲,朱自強,賈銘,初建朋,范忠,朱榮錦,戈肖鴻,楊根慶,陸衛(wèi);懸臂式RF MEMS開關的設計與研制[J];半導體學報;2003年11期

9 雷嘯鋒,劉澤文,宣云,韋嘉,李志堅,劉理天;一種K波段雙橋電容式RF MEMS開關的設計與制作[J];半導體學報;2005年07期

10 張錦文,金玉豐,郝一龍,王瑋,田大宇,王陽元;電容耦合式微波MEMS開關(英文)[J];半導體學報;2005年09期

相關博士學位論文 前2條

1 郁元衛(wèi);射頻MEMS可重構單片電路研究[D];南京大學;2012年

2 王惠生;非對稱半波耦合濾波器的理論研究與優(yōu)化設計[D];北京郵電大學;2012年

，

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