【摘要】：隨著社會的不斷發(fā)展，傳統(tǒng)化石能源日益枯竭，尋找可再生的新能源成為世界各國的當(dāng)務(wù)之急。目前，人們已把來源豐富、廉價、清潔無污染的太陽能作為現(xiàn)代開發(fā)利用的主要新能源之一。在太陽能的利用中，銅銦鎵硒(CIGS)薄膜電池由于效率高、成本低、無衰退、壽命長、抗輻射等優(yōu)點，而被認(rèn)為是最具有前途的一種新型的光伏電池產(chǎn)品。目前，制備CIGS薄膜的方法有很多種，其中磁控濺射的方法是最見成效的方法之一。 在本論文中，我們采用技術(shù)成熟的磁控濺射-后硒化法制備CIGS薄膜材料，首先我們采用單個合金靶制備Cu-In-Ga（CIG）的合金預(yù)置層；然后通過高溫硒化退火制備出不同質(zhì)量的CIGS薄膜材料，并進(jìn)行了一些光電性能的表征。探討研究了將CIGS薄膜作為吸收層進(jìn)行了薄膜電池的組裝。在實驗中又發(fā)現(xiàn)CIGS薄膜具有良好的導(dǎo)電性能和高的催化性能，所以我們把其首次應(yīng)用到了染料敏化電池上面，所測得的效率可與Pt相媲美。 本論文主要從以下幾個部分進(jìn)行研究： 第一部分， CIGS薄膜的制備。在這部分實驗中，我們采用兩步法制備CIGS薄膜材料。首先，通過磁控濺射先制備出不同厚度的Cu-In-Ga合金預(yù)置層；其次，通過不同的硒化時間、硒化溫度和升溫速率等，制備出不同質(zhì)量的CIGS薄膜材料，并進(jìn)行了一些表征。簡單探討了這些硒化條件的變化對CIGS薄膜材料性能的影響。 第二部分，銅銦鎵硒薄膜電池的組裝。在本階段，我們嘗試性的進(jìn)行了CIGS薄膜電池的組裝，我們先通過一些測試證明所制備的CIGS為P型結(jié)構(gòu)。對其他各層的制備：首先，分別利用各種方法制備了Mo背電極（具有雙層結(jié)構(gòu)）、CdS緩沖層、i-ZnO/Al:ZnO窗口層和Al電極。然后，選擇適當(dāng)質(zhì)量的CIGS吸收層進(jìn)行薄膜電池的組裝。最后對組裝好的電池進(jìn)行了I-V測試。 第三部分，銅銦鎵硒薄膜在光電中的應(yīng)用。我們在FTO基底上制備CIGS薄膜，將薄膜作為對電極材料進(jìn)行染料敏化電池的組裝，，并對其性能進(jìn)行測試。我們通過對不同薄膜的厚度對電池性能的影響進(jìn)行探索研究，優(yōu)化實驗條件，得到擁有優(yōu)越性能的染料敏化電池。 第四部分，油墨法制備銅銦鎵硒薄膜材料。在該部分中，我們采用物理的方法先把銅、銦、鎵三種單質(zhì)分散到DDT中制成油墨；然后，通過硒化退火的過程制備成CIGS薄膜材料，并進(jìn)一步對其表征。
[Abstract]:With the development of society, the traditional fossil energy is exhausted day by day. At present, solar energy, which is abundant, cheap, clean and clean, has been regarded as one of the main new energy sources. Due to its high efficiency, low cost, no decay, long life and radiation resistance, copper indium gallium selenium (CIGS) thin film cell is considered as the most promising photovoltaic cell. At present, there are many methods to prepare CIGS thin films, among which magnetron sputtering is one of the most effective methods. In this thesis, we prepared CIGS thin films by magnetron sputtering and post-selenization method. Firstly, we prepared the alloy preset layer of Cu-In-Ga (CIG) by single alloy target. Then, CIGS thin films with different quality were prepared by high temperature selenization annealing, and some optical and electrical properties were characterized. The assembly of thin film battery using CIGS thin film as absorption layer was studied. It is also found that the CIGS film has good conductivity and high catalytic performance, so we applied it to the dye sensitized battery for the first time, and the measured efficiency is comparable to that of Pt. This thesis mainly includes the following parts: the first part, the preparation of CIGS thin films. In this part of the experiment, we prepared CIGS thin films by two-step method. Firstly, different thickness of Cu-In-Ga alloy was prepared by magnetron sputtering. Secondly, different quality of CIGS films were prepared by different selenation time, temperature and heating rate. The effect of these selenization conditions on the properties of CIGS thin films was discussed. The second part is the assembly of copper indium gallium selenium thin film battery. In this stage, we tried to assemble the CIGS thin film battery. We first tested the prepared CIGS as a P-type structure. The preparation of other layers: firstly, Mo back-electrode (), CdS buffer layer with double-layer structure, i-ZnO/Al:ZnO window layer and Al electrode) were prepared by various methods. Then, the CIGS absorbent layer of appropriate quality is selected to assemble the thin film battery. Finally, I-V test was carried out on the assembled battery. The third part, the application of copper indium gallium selenium film in photoelectricity. CIGS thin films were prepared on FTO substrates. The films were used as electrode materials for the assembly of dye sensitized batteries and their properties were tested. We studied the effect of different film thickness on the performance of the cell and optimized the experimental conditions to obtain the dye sensitized battery with superior performance. In the fourth part, copper indium gallium selenium thin films were prepared by ink method. In this part, we first disperse copper, indium and gallium into DDT to make ink by physical method, then we prepare CIGS thin film by the process of selenium annealing, and further characterize it.
【學(xué)位授予單位】：河南大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TM914.4

【參考文獻(xiàn)】

相關(guān)期刊論文 前8條

1 徐傳明,許小亮,徐軍,楊曉杰,左健,黨學(xué)明,馮葉,黃文浩,劉洪圖;Cu(In,Ga)_3Se_5薄膜結(jié)構(gòu)的Raman研究[J];半導(dǎo)體學(xué)報;2004年11期

2 方玲,張弓,莊大明,趙明,鄭麒麟,丁曉峰,吳敏生;Cu-In膜成分偏析對CIS膜結(jié)構(gòu)的影響[J];清華大學(xué)學(xué)報(自然科學(xué)版);2004年05期

3 何青,孫云,李鳳巖,敖建平,劉芳芳,李偉,劉維一,孫國忠,周志強(qiáng),薛玉明,樸英美,汲明亮,鄭貴波,李長健;效率為12.1%的Cu(In,Ga)Se_2薄膜太陽電池[J];太陽能學(xué)報;2004年06期

4 鄭麒麟;莊大明;張弓;李秋芳;;濺射功率對CIGS吸收層前驅(qū)膜成分和結(jié)構(gòu)的影響[J];太陽能學(xué)報;2006年11期

5 戴松元,王孔嘉,鄔欽崇,王瑜;納米晶體化學(xué)太陽電池的研究[J];太陽能學(xué)報;1997年02期

6 莊大明,張弓;CIGS薄膜太陽能電池研究現(xiàn)狀及發(fā)展前景[J];新材料產(chǎn)業(yè);2005年04期

7 葉文俊;;軟性電子印刷,等待開啟的藍(lán)海[J];印刷經(jīng)理人;2009年10期

8 查杉;元金石;張弓;莊大明;;銅銦硫薄膜的固態(tài)硫化法制備及其性能研究[J];真空科學(xué)與技術(shù)學(xué)報;2007年01期

本文編號：2334457