【摘要】：高壓電網(wǎng)中過電壓的測(cè)量對(duì)于研究過電壓的行為特征和絕緣配合設(shè)計(jì)具有重要的意義。隨著先進(jìn)光學(xué)技術(shù)的飛速發(fā)展，將抗干擾能力強(qiáng)的光電傳感技術(shù)運(yùn)用到電網(wǎng)過電壓監(jiān)測(cè)已成為可能。因此，本文將光電轉(zhuǎn)換技術(shù)和耦合電容技術(shù)結(jié)合起來，研究非接觸式過電壓傳感器，配合實(shí)現(xiàn)過電壓的無源非接觸測(cè)量。 本文所研制的電網(wǎng)過電壓傳感器的主要原理為：采用耦合電容分壓的方式，將過電壓的幅值降低，再通過特殊晶體的一次電光效應(yīng)，將低幅值的過電壓信號(hào)轉(zhuǎn)換為隨之變化的光信號(hào)，并通過光纖將信號(hào)傳輸?shù)胶笈_(tái)處理，最終經(jīng)過反算獲得原始被測(cè)過電壓信號(hào)。 傳感器主要由兩大部分組成：非接觸分壓?jiǎn)卧凸怆妭鞲袉卧�。根�?jù)實(shí)際測(cè)量的需求，本文根據(jù)耦合電容法，設(shè)計(jì)了非接觸分壓?jiǎn)卧慕Y(jié)構(gòu)和參數(shù)，并通過仿真計(jì)算和試驗(yàn)結(jié)果對(duì)非接觸分壓?jiǎn)卧姆謮罕冗M(jìn)行驗(yàn)證和確定。本文最終選定LiNbO3晶體作為材料研究和設(shè)計(jì)光電傳感單元，并對(duì)其進(jìn)行精密封裝，驗(yàn)證了其感應(yīng)低壓信號(hào)的準(zhǔn)確度和靈敏度。最后，將兩個(gè)部分結(jié)合起來組成傳感器整體，并對(duì)其進(jìn)行了沖擊電壓試驗(yàn)，將原始被測(cè)電壓與反算的電壓進(jìn)行對(duì)比，表明傳感器具有較高的精度和頻率響應(yīng)速度，能夠滿足工程上過電壓測(cè)量的要求。論文取得的主要成果有： ①通過耦合電容法實(shí)現(xiàn)了以非接觸的方式將高幅值過電壓信號(hào)轉(zhuǎn)化為低電壓小信號(hào)，并將其作為一次電光效應(yīng)的輸入源信號(hào)。試驗(yàn)結(jié)果表明：該方法的沖擊電壓響應(yīng)時(shí)間誤差在3%以內(nèi)，測(cè)量峰值的誤差為2%以內(nèi)。 ②通過一次電光效應(yīng)制作光電傳感單元實(shí)現(xiàn)了電信號(hào)到光信號(hào)的轉(zhuǎn)換，試驗(yàn)結(jié)果表明：光電傳感單元能精確測(cè)量幅值在[-20,20V]之間的任意波形電壓，頻率能達(dá)到MHz級(jí)別。 ③將耦合電容法和一次電光效應(yīng)法結(jié)合起來，實(shí)現(xiàn)了過電壓的非接觸無源傳感，，并進(jìn)行了誤差分析提出了改進(jìn)措施。 本文提出的非接觸式光電過電壓傳感器最終能夠?qū)崿F(xiàn)對(duì)過電壓的幅值和波形準(zhǔn)確測(cè)量，具有無源，抗干擾能力強(qiáng)，且與電力系統(tǒng)一次設(shè)備電氣隔離的優(yōu)點(diǎn)，是該領(lǐng)域研究的重大技術(shù)突破。其測(cè)量結(jié)果將有效指導(dǎo)過電壓的防護(hù)設(shè)計(jì)工作，保障電力系統(tǒng)安全穩(wěn)定運(yùn)行。
[Abstract]:The measurement of overvoltage in high voltage power system is of great significance to study the behavior characteristics of overvoltage and design of insulation coordination. With the rapid development of advanced optical technology, it is possible to apply the anti-jamming photoelectric sensing technology to the power grid overvoltage monitoring. Therefore, in this paper, the photoelectric conversion technology and the coupled capacitance technology are combined to study the non-contact overvoltage sensor and realize the passive non-contact measurement of the over-voltage. The main principle of the overvoltage sensor developed in this paper is that the amplitude of the overvoltage is reduced by the way of coupling capacitance, and then the primary electro-optic effect of the special crystal is adopted. The low-amplitude overvoltage signal is converted into the varying optical signal, and the signal is transmitted to the background processing through optical fiber, and the original overvoltage signal is obtained by inverse calculation. The sensor is mainly composed of two parts: non-contact partial voltage unit and photoelectric sensor unit. According to the requirement of the actual measurement, the structure and parameters of the non-contact partial voltage unit are designed according to the coupling capacitance method, and the partial pressure ratio of the non-contact partial voltage unit is verified and determined by the simulation calculation and test results. In this paper, the LiNbO3 crystal is selected as the material to study and design the photoelectric sensor unit, and the precision packaging is carried out to verify the accuracy and sensitivity of the inductive low voltage signal. Finally, the two parts are combined to form the whole sensor, and the impulse voltage test is carried out. The comparison between the original measured voltage and the back calculated voltage shows that the sensor has high precision and frequency response speed. Able to meet the requirements of overvoltage measurement in engineering. The main achievements of this paper are as follows: 1 the high amplitude overvoltage signal is transformed into low voltage small signal by coupling capacitance method, and it is used as the input signal of primary electro-optic effect. The experimental results show that the response time error of impulse voltage is less than 3% and the error of measuring peak value is less than 2%. (2) the conversion of electrical signal to optical signal is realized by making a photoelectric sensor unit by a single electro-optic effect. The experimental results show that the photoelectric sensor unit can accurately measure the arbitrary waveform voltage between [-20 ~ (20) V] and the frequency can reach the MHz level. (3) the coupling capacitance method and the primary electro-optic effect method are combined to realize the non-contact passive sensing of overvoltage, and the improvement measures are put forward through error analysis. The non-contact photoelectric overvoltage sensor proposed in this paper can measure the amplitude and waveform of the overvoltage accurately, which has the advantages of passive, strong anti-interference ability and electrical isolation from the primary equipment of power system. It is a great technical breakthrough in this field. The measurement results will effectively guide the protection design of overvoltage and ensure the safe and stable operation of power system.
【學(xué)位授予單位】：重慶大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM933.2

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