發(fā)布時間：2018-10-26 07:11

【摘要】：隨著晶體硅太陽電池制備技術(shù)的進(jìn)步，產(chǎn)業(yè)化電池效率不斷向?qū)嶒?yàn)室記錄靠近。電池效率的提升依賴硅片的質(zhì)量，而硅片的質(zhì)量則主要是由其中的雜質(zhì)和缺陷決定的，p型摻硼直拉單晶硅太陽電池在光照下會出現(xiàn)效率衰退現(xiàn)象，因此，提高晶體硅的品質(zhì)并抑制光衰的措施和機(jī)制成為光伏領(lǐng)域研究的重要課題。 1、本文首先對摻鎵、摻硼單晶硅中雜質(zhì)和缺陷在退火過程中的行為及其對少子壽命的影響進(jìn)行了系統(tǒng)研究，結(jié)果表明，在單步退火過程中，隨著退火溫度的升高，摻鎵單晶硅和摻硼單晶硅中間隙氧含量都下降，摻鎵單晶硅中間隙氧含量下降速率更快；氧沉淀腐蝕坑都增多，摻鎵單晶硅的腐蝕坑尺寸小于摻硼單晶硅；少子壽命均下降，且低溫退火下降速率更快。隨著退火時間的延長，摻鎵單晶硅和摻硼單晶硅中間隙氧含量也下降，氧沉淀腐蝕坑密度增加，少子壽命變化不大。兩步退火過程中，隨著第二步退火溫度的升高，摻鎵單晶硅和摻硼單晶硅中間隙氧含量和少子壽命下降速率加快。 2、研究了不同摻鎵比例的直拉單晶硅及其太陽電池的性能，結(jié)果表明，，100%摻鎵的單晶硅的少子壽命比100%摻硼單晶硅的高一倍，Ga、B共摻單晶硅的少子壽命較低。不同比例的摻鎵單晶硅太陽電池的轉(zhuǎn)換效率均達(dá)到了摻硼單晶硅太陽電池的水平，摻鎵為80%時的太陽電池轉(zhuǎn)換效率最高。 3、研究了鎵對單晶硅太陽電池效率衰減的抑制作用，結(jié)果表明，隨著摻鎵比例的增加，直拉單晶硅太陽電池的光致衰減率降低，摻鎵為100%時，光致衰減率最低，達(dá)到0.205%。由于鎵的摻入，B-O復(fù)合體的濃度降低，抑制了太陽電池的光致衰減。
[Abstract]:With the progress of preparation technology of crystalline silicon solar cells, the efficiency of industrial solar cells is more and more close to the laboratory records. The improvement of cell efficiency depends on the quality of silicon wafer, and the quality of silicon wafer is mainly determined by the impurities and defects in it. The efficiency of p-type boron doped Czochralski silicon solar cells will decline under light. The measures and mechanisms of improving the quality of crystal silicon and inhibiting light decay have become an important subject in the field of photovoltaic research. 1. Firstly, the behavior of impurities and defects in gallium doped and boron doped monocrystalline silicon during annealing and their influence on minority carrier lifetime are systematically studied. The results show that, in the process of single step annealing, with the increase of annealing temperature, The gap oxygen content in gallium doped monocrystalline silicon and boron doped monocrystalline silicon decreases, while the gap oxygen content in gallium doped monocrystalline silicon decreases more rapidly. The corrosion pits of Gallium doped monocrystalline silicon are smaller than that of boron doped monocrystalline silicon, and the minority carrier lifetime is decreased, and the decreasing rate of low temperature annealing is faster. With the increase of annealing time, the gap oxygen content in gallium doped monocrystalline silicon and boron doped monocrystalline silicon also decreases, the density of oxygen precipitation corrosion pit increases, and the minority carrier lifetime does not change much. With the increase of the second step annealing temperature, the gap oxygen content and minority carrier lifetime decrease rate in gallium doped monocrystalline silicon and boron doped monocrystalline silicon are increased. 2. The performances of Czochralski silicon and its solar cells with different gallium ratio are studied. The results show that the minority carrier lifetime of 100% Gallium doped silicon is twice as high as that of 100% boron doped monocrystalline silicon, and the minority carrier lifetime of Ga,B co-doped monocrystalline silicon is lower than that of 100% boron doped monocrystalline silicon. The conversion efficiency of gallium doped silicon solar cells reaches the level of boron doped silicon solar cells, and the conversion efficiency of the cells with 80 gallium doping is the highest. 3. The inhibitory effect of gallium on the efficiency attenuation of monocrystalline silicon solar cells is studied. The results show that the photo-induced attenuation rate of Czochralski silicon solar cells decreases with the increase of gallium doping ratio, and the photo-induced attenuation rate is the lowest when the Gallium doping ratio is 100. Reach 0.205. Due to the addition of gallium, the concentration of B-O complex decreases, which inhibits the photo-induced decay of solar cells.
【學(xué)位授予單位】：河北工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TM914.4

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