【摘要】：本文主要對(duì)銅銦鎵硒(Cu(In,Ga)Se_2,以下簡(jiǎn)稱CIGS)薄膜太陽(yáng)電池緩沖層硫化鎘(CdS)由實(shí)驗(yàn)室制備向連續(xù)化制備方法進(jìn)行深入研究。主要研究?jī)?nèi)容包括:實(shí)驗(yàn)室小面積制備CdS薄膜及其性能測(cè)試,實(shí)驗(yàn)室大面積制備CdS薄膜工藝探究,連續(xù)化制備CdS薄膜設(shè)備設(shè)計(jì),實(shí)現(xiàn)卷對(duì)卷(Roll-to-Roll)連續(xù)化制備CdS薄膜且性能滿足CIGS薄膜太陽(yáng)電池設(shè)計(jì)要求。在實(shí)驗(yàn)室小面積(6cm×2cm)CdS薄膜制備研究方面,本文在醋酸鹽體系下通過(guò)化學(xué)水浴法(Chemical Bath Deposition,CBD)以聚酰亞胺(Polyimide,PI)為襯底制備出均勻致密的CdS薄膜,著重研究制備過(guò)程中氨水濃度和水浴溫度對(duì)CdS薄膜結(jié)晶質(zhì)量及材料性能的影響。研究結(jié)果表明,實(shí)驗(yàn)室小面積制備CdS薄膜較佳的工藝條件為:1×10-3mol/L的(CH_3COO)_2Cd,1.3×10-3mol/L的NH_3·H_2O,0.01 mol/L的SC(NH_2)_2,3×10-3mol/L的CH_3COONH_4,75℃水浴溫度,沉積時(shí)間為30分鐘。將以此條件反應(yīng)所制得的CdS薄膜應(yīng)用于以PI為襯底的CIGS薄膜太陽(yáng)電池,其光電轉(zhuǎn)換效率達(dá)到11.06%。在實(shí)驗(yàn)室大面積(30cm×30cm)CdS薄膜制備研究方面,本文通過(guò)小面積制備CdS薄膜的工藝條件,結(jié)合大面積CdS薄膜制備過(guò)程中所遇到的問(wèn)題,對(duì)工藝條件進(jìn)行調(diào)整,調(diào)整后氨水濃度和水浴溫度條件為:以5×10-3 mol/L的(CH_3COO)_2Cd、0.05mol/L的SC(NH_2)_2、1.5×10-2mol/L的CH_3COONH_4、6.5×10-3mol/L的NH_3·H_2O,75℃水浴溫度,沉積時(shí)間為10分鐘。將以此條件反應(yīng)所制得的CdS薄膜應(yīng)用于以PI為襯底的CIGS薄膜太陽(yáng)電池,其光電轉(zhuǎn)換效率達(dá)到9.12%。在連續(xù)化制備CdS薄膜的設(shè)備設(shè)計(jì)方面,結(jié)合實(shí)驗(yàn)室大面積制備工藝與經(jīng)驗(yàn),深入研究由靜止溶液向動(dòng)態(tài)溶液沉積方面的機(jī)理,由此引申到設(shè)備的設(shè)計(jì)和制造。在對(duì)若干設(shè)備的設(shè)計(jì)樣稿進(jìn)行分析并與前期實(shí)驗(yàn)研究結(jié)果相結(jié)合后,最終決定采用溢流方式設(shè)計(jì)連續(xù)化制備CdS薄膜的設(shè)備,并完成設(shè)備制造。采用溢流方式的CdS制備設(shè)備,對(duì)設(shè)備工藝進(jìn)行不斷改進(jìn)優(yōu)化,最終成功實(shí)現(xiàn)連續(xù)化制備CdS薄膜,工藝條件為:3×10-3 mol/L的(CH_3COO)_2Cd,1.5 mol/L的NH_3·H_2O,0.45 mol/L的SC(NH_2)_2,水浴溫度為60℃,沉積時(shí)間為10分鐘。
[Abstract]:In this paper, cadmium sulfide (CdS) buffer layer of copper indium gallium selenium (Cu (In,Ga) Se_2, (CIGS) thin film solar cell was studied from laboratory preparation to continuous preparation. The main research contents include: laboratory small area CdS thin film preparation and its performance test, laboratory large area CdS thin film preparation process, continuous preparation of CdS film equipment design, CdS thin films were prepared by continuous roll-to-roll (Roll-to-Roll) and the performance of CIGS thin-film solar cells was met. In the field of preparation of small area (6cm 脳 2cm) CdS thin films in laboratory, homogeneous and dense CdS thin films were prepared on the substrate of polyimide (Polyimide,PI) by chemical water bath method (Chemical Bath Deposition,CBD) in acetate system in this paper. The effects of ammonia concentration and bath temperature on the crystallization quality and properties of CdS thin films were studied. The results show that the optimum conditions for the preparation of CdS thin films in laboratory are as follows: 1: 1 脳 10-3mol/L (CH_3COO), 1. 3 脳 10-3mol/L, NH_3 H2O0.01 mol/L, SC (NH_2), 3 脳 10-3mol/L, CH_3COONH_4,75 鈩，

本文編號(hào)：2223325