【摘要】：憶阻器是一類有記憶特性的非線性電阻,但因其對制備環(huán)境和技術(shù)要求嚴(yán)格,導(dǎo)致憶阻器實物短期內(nèi)仍不能走出實驗室,所以設(shè)計可以替代憶阻器的電路模型是一個重要的研究方向�，F(xiàn)有憶阻器電路模型存在設(shè)計復(fù)雜、實現(xiàn)困難以及對憶阻器性質(zhì)不能準(zhǔn)確模擬的缺陷,導(dǎo)致許多關(guān)于憶阻器的應(yīng)用研究難以廣泛開展,憶阻器電路模型的研究對于現(xiàn)階段憶阻器應(yīng)用的研究具有重要意義。本文的目的是分析現(xiàn)有磁控型憶阻器電路模型的缺陷,提出并硬件實現(xiàn)一種改進的磁控型憶阻器電路模型,最后,設(shè)計一種MC振蕩電路,使用該電路模型驗證其性能。本文首先圍繞磁控型憶阻器電路模型進行研究,介紹了憶阻器電路模型的研究現(xiàn)狀,總結(jié)了各種電路模型的優(yōu)缺點,重點從工作原理和電路實現(xiàn)兩個方面分析了現(xiàn)有磁控型憶阻器電路模型的缺陷,即磁控型憶阻器的電路模型在電路磁通的計算上普遍忽略了電路的初始狀態(tài)和輸入激勵的初始狀態(tài),計算的磁通量有誤,導(dǎo)致在該原理指導(dǎo)下的電路設(shè)計也普遍存在缺陷,問題主要集中在積分電路的設(shè)計上。根據(jù)對現(xiàn)有磁控型憶阻器電路模型的設(shè)計原理分析和仿真驗證,發(fā)現(xiàn)其積分器會忽略電路中的直流分量,且不能有效存儲積分得出的磁通信息,導(dǎo)致在仿真實驗中,表現(xiàn)出了其電壓電流特性與理論的理想憶阻器電壓電流特性不符。這種電路模型存在的缺陷可能導(dǎo)致其在代替憶阻器應(yīng)用于研究過程中得出錯誤的結(jié)論,所以分析出其不足所在和設(shè)計仿真實驗證明其缺陷,對憶阻器電路模型的測試和改進提供了一種思路。在分析了現(xiàn)有磁控型憶阻器電路模型的不足的基礎(chǔ)上,本文對電路模型積分部分的改進提出了兩種方案:基于模擬電路的積分方案和基于數(shù)字電路的積分方案。在論證了理論和實現(xiàn)可行性的基礎(chǔ)上選擇了數(shù)字積分的方案,并進行了硬件實現(xiàn),最后設(shè)計了測試實驗,將結(jié)果與憶阻器理論結(jié)果對比,驗證了其正確性。最后,本文對基于磁控型憶阻器的MC振蕩電路進行研究。首先,本文設(shè)計了一種憶阻器精確控制電路,利用比較電路構(gòu)成反饋回路,避免了傳統(tǒng)方法中反復(fù)寫入讀取的繁瑣步驟,提高了控制效率和精度。然后,設(shè)計了一種MC振蕩電路克服了RC振蕩器頻率調(diào)節(jié)精度差、需手動調(diào)節(jié)的不足,原理上可以實現(xiàn)高精度、程序化的頻率控制。最后,通過仿真驗證,證明了該方法的可行性,并分析了電路特性。
[Abstract]:The memory resistor is a kind of nonlinear resistor with memory characteristics. However, because of its strict requirements on the preparation environment and technology, the memory resistor can not walk out of the laboratory in a short period of time. So it is an important research direction to design the circuit model which can replace the resistive device. The current circuit model of the resistive device is complex in design, difficult in implementation and unable to simulate exactly the properties of the resistor, which makes it difficult to carry out a lot of research on the application of the resistive device. The research of the circuit model of the resistor is of great significance to the research of the application of the resistor at the present stage. The purpose of this paper is to analyze the defects of the current circuit models of magnetically controlled amnesia, and to implement an improved circuit model of magnetically controlled memristor in hardware. Finally, a MC oscillating circuit is designed, and its performance is verified by using the circuit model. Firstly, this paper studies the circuit model of magnetically controlled memristor, introduces the research status of the circuit model, summarizes the advantages and disadvantages of various circuit models. The defects of the current circuit model of magnetically controlled resistor are analyzed from the aspects of working principle and circuit realization. In other words, the circuit model of the magnetic-controlled resistor generally ignores the initial state of the circuit and the initial state of the input excitation in the calculation of the circuit flux, and the calculation of the magnetic flux is incorrect, which leads to the defect of the circuit design under the guidance of the principle. The problem is mainly focused on the design of integral circuit. According to the analysis of the design principle of the current circuit model of magnetically controlled amnesia and the simulation verification, it is found that the integrator will ignore the DC component of the circuit and can not store the flux information from the integration effectively, which leads to the simulation experiment. It is shown that the voltage and current characteristics are not consistent with the theoretical ideal resistor voltage and current characteristics. The defects of this kind of circuit model may lead to the wrong conclusion in the process of replacing the amnesia in the research process. Therefore, the deficiency of the circuit model is analyzed and its defects are proved by the design of simulation experiments. A train of thought is provided for the test and improvement of the circuit model of the resistor. Based on the analysis of the shortcomings of the current circuit models of magnetically controlled amnesia, this paper proposes two schemes to improve the integration of the circuit model: the integration scheme based on analog circuit and the integration scheme based on digital circuit. On the basis of demonstrating the feasibility of the theory and realization, the scheme of digital integration is selected, and the hardware implementation is carried out. Finally, the test experiment is designed, and the results are compared with the theoretical results of the resistor to verify its correctness. Finally, the MC oscillating circuit based on magnetically controlled amnesia is studied in this paper. Firstly, this paper designs an accurate control circuit of amnesia, which uses the comparison circuit to form a feedback loop, avoids the tedious steps of repeatedly writing and reading in the traditional method, and improves the control efficiency and precision. Then, a MC oscillating circuit is designed to overcome the low precision of frequency regulation of RC oscillator, which needs manual regulation. In principle, it can realize high precision and programmed frequency control. Finally, the feasibility of the method is proved by simulation, and the circuit characteristics are analyzed.
【學(xué)位授予單位】：國防科學(xué)技術(shù)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TN752;TM501

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