發(fā)布時(shí)間：2018-07-11 13:08

  本文選題：薄膜干涉 + 太陽(yáng)電池��； 參考：《電子科技大學(xué)》2014年碩士論文

【摘要】：能源危機(jī)日益嚴(yán)峻,太陽(yáng)能電池的作用顯得越來(lái)越重要。然而太陽(yáng)能發(fā)電成本一直較高,這就需要我們改進(jìn)工藝,降低太陽(yáng)能電池的發(fā)電成本。在降低成本上有幾個(gè)方面,一方面可以減少原材料的成本,還有一方面就是在不增加制造成本的基礎(chǔ)上通過(guò)改進(jìn)工藝提高電池轉(zhuǎn)換效率。減少反射光和透射光的損失以及各種復(fù)合損失是提高太陽(yáng)電池效率的關(guān)鍵。目前晶體硅太陽(yáng)電池所用的減反射膜絕大部分是單層SiNx減反射膜,在350nm~1100nm的光譜范圍內(nèi)有一反射率的極小值,能夠?qū)⑻?yáng)光的平均反射率降低到9%左右。理論計(jì)算表明,采用雙層減反射膜,平均反射率能夠進(jìn)一步降低。雙層減反射膜工藝通過(guò)現(xiàn)有的設(shè)備和人力的條件基礎(chǔ)上,只需在原有的PECVD工藝上在加一步就能實(shí)現(xiàn)0.2%的效率提升。雖然只有0.2%,但是這已經(jīng)是很大的進(jìn)步,在降低生產(chǎn)成本和發(fā)電成本上又邁近了一步。本文研究了SiON/SiN雙層減反射膜結(jié)構(gòu),和雙層氮化硅SiN結(jié)構(gòu)的電池片,所做的試驗(yàn)結(jié)果如下:1)通過(guò)多次大量PECVD試驗(yàn)得出了PECVD中總氣體流量,壓力,溫度等因素對(duì)氮化硅SiN沉積速率,少子壽命的影響,從而為實(shí)現(xiàn)雙層膜工藝提供了理論指導(dǎo)2)基于薄膜光干涉原理,利用雙層減反射膜在300~1100nm波段上的超寬減反射特性,對(duì)傳統(tǒng)的單層SiN減反膜電池做了改進(jìn)。用等效導(dǎo)納方法計(jì)算雙層薄膜反射率,建立了模擬加權(quán)平均反射率的評(píng)價(jià)函數(shù),并基于Matlab編程和Excel2007函數(shù)公式建立了光在單層和雙層減反射膜的反射率曲線模擬程序,通過(guò)改變膜層參數(shù)(膜厚和折射率)的DOE試驗(yàn)?zāi)M分析了雙層減反射膜的膜厚和折射率變化對(duì)加權(quán)平均反射率影響的規(guī)律,試驗(yàn)過(guò)程中獲得了最佳雙層膜折射率和厚度匹配值,3)試驗(yàn)制備了SiON/SiN雙層減反射膜電池,雙層SiN減反射膜電池,與單層減反射膜比較,測(cè)試了電池封裝前后封裝后的反射率,量子效率,電性能參數(shù),結(jié)果顯示雙層減反射膜電池,短路電流上雙層膜要比單層膜的要高0.10~0.15A,雙層膜開(kāi)路電壓要比單層膜高出2~3mv,因而最終雙層膜太陽(yáng)能電池片的效率要高出單層膜0.2~0.3%左右.雙層薄膜具有優(yōu)良的超寬帶減反射特性,可以有效地提高工業(yè)生產(chǎn)中的多晶硅太陽(yáng)電池光電轉(zhuǎn)換效率.
[Abstract]:The energy crisis is becoming more and more serious, and the role of solar cells is becoming more and more important. However, the cost of solar power generation has been high, which requires us to improve the process and reduce the cost of solar cells. On the one hand, it can reduce the cost of raw materials; on the other hand, it can improve the efficiency of battery conversion by improving the process without increasing the manufacturing cost. Reducing the loss of reflected and transmitted light and various composite losses is the key to improve the efficiency of solar cells. At present, the antireflection films used in crystalline silicon solar cells are mostly single-layer Sinx antireflection films. There is a minimum reflectivity in the spectral range of 350nm~1100nm, which can reduce the average solar reflectivity to about 9%. The theoretical calculation shows that the average reflectivity can be further reduced by using the double layer antireflection film. On the basis of the existing equipment and manpower, the double layer antireflection film process can increase the efficiency by 0.2% only by adding one step to the original PECVD process. It's only 0.2, but it's a big step forward in reducing production and power costs. In this paper, the structure of Sion / SiN double layer antireflection film and the double layer silicon nitride SiN structure are studied. The experimental results are as follows: 1) the total gas flow rate, pressure and temperature in PECVD are obtained by many PECVD experiments, and the deposition rate of SiN in PECVD is obtained. The influence of minority carrier lifetime provides theoretical guidance for the realization of bilayer film technology 2) based on the principle of thin film optical interference, the conventional single-layer sin antireflection film battery is improved by using the ultra-broad reflectance characteristics of the double layer antireflection film in 300~1100nm band. The equivalent admittance method is used to calculate the reflectivity of double-layer thin films, and the evaluation function of simulating weighted average reflectivity is established. Based on Matlab programming and Excel 2007 function formula, the simulation program of reflectivity curve of light in single layer and double layer antireflection film is established. The influence of the thickness and refractive index of the double layer antireflection film on the weighted average reflectivity is analyzed by means of the DOE experiment, which changes the thickness and refractive index of the double layer antireflection film by changing the film parameters (film thickness and refractive index). During the experiment, the best refractive index and thickness matching value of the bilayer film were obtained. The Sion / SiN double layer antireflection film battery and the double SiN antireflection film battery were prepared. Compared with the single layer antireflection film, the reflectivity of the battery before and after encapsulation was measured. Quantum efficiency, electrical performance parameters, the results show that the double-layer antireflection film battery, The open circuit voltage of the bilayer film is 2mv higher than that of the monolayer film, and the efficiency of the bilayer membrane solar cell is about 0.2mv higher than that of the monolayer film. The double layer thin film has excellent UWB antireflection characteristics and can effectively improve the photoelectric conversion efficiency of polycrystalline silicon solar cells in industrial production.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM914.4

【參考文獻(xiàn)】

相關(guān)碩士學(xué)位論文 前1條

1 張廣英;氮化硅薄膜制備及其相關(guān)特性研究[D];大連理工大學(xué);2009年

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本文編號(hào)：2115303