發(fā)布時(shí)間：2018-06-28 05:11

  本文選題：壓接式IGBT + 串聯(lián)　； 參考：《華北電力大學(xué)》2014年碩士論文

【摘要】：高壓大功率直流輸電技術(shù)在遠(yuǎn)距離輸電、可再生能源發(fā)電、城市配電網(wǎng)及分布式發(fā)電等諸多領(lǐng)域發(fā)揮著越來越重要的作用,而換流系統(tǒng)是直流輸電系統(tǒng)的核心部件。隨著電力電子技術(shù)的發(fā)展,基于絕緣柵雙極型晶體管(insulation gate bipolar transistor, IGBT)的電壓源換流器開始在直流輸電中得到廣泛應(yīng)用。由于柔性直流輸電系統(tǒng)中直流電壓等級(jí)較高,遠(yuǎn)大于單個(gè)IGBT所能承受的電壓,所以IGBT模塊的串聯(lián)技術(shù)對(duì)于實(shí)現(xiàn)高壓大功率輸出至關(guān)重要。串聯(lián)技術(shù)對(duì)于IGBT的動(dòng)作一致性要求較高,但是由于IGBT自身參數(shù)以及外圍電路參數(shù)都具有分散性,加上其開關(guān)動(dòng)態(tài)過程較為短暫,各個(gè)串聯(lián)IGBT模塊在開關(guān)動(dòng)態(tài)過程中的電壓分布不均衡問題尤為突出,嚴(yán)重情況下可導(dǎo)致某些器件因?yàn)槌惺茌^高的過電壓而損壞。因此,為確保換流器閥安全運(yùn)行,研究影響串聯(lián)IGBT電壓分布不均衡的因素并量化分析,從而在此基礎(chǔ)上提出相應(yīng)的均壓保護(hù)措施十分必要。 本文針對(duì)IGBT串聯(lián)時(shí)的電壓不均衡問題,在IGBT的建模、串聯(lián)IGBT電壓分布不均衡的影響因素分析以及柵極RCD均壓策略等方面進(jìn)行了深入研究與分析,開展的工作如下： 首先,根據(jù)IGBT器件的結(jié)構(gòu)及工作原理,基于saber軟件建立了壓接式IGBT的動(dòng)態(tài)行為模型,詳細(xì)研究了模型參數(shù)的選取及模型有效性驗(yàn)證方法,使模型可以準(zhǔn)確的反映IGBT的開關(guān)動(dòng)態(tài)過程。 其次,搭建了兩個(gè)IGBT串聯(lián)的仿真電路,深入分析總結(jié)了影響IGBT串聯(lián)時(shí)電壓分布不均衡的因素,并對(duì)各個(gè)影響因素的影響程度進(jìn)行了量化分析。 再次,在前文分析的基礎(chǔ)上,針對(duì)電壓源換流器一個(gè)閥段內(nèi)的七個(gè)串聯(lián)IGBT模塊,建立了等效電路并對(duì)串聯(lián)IGBT工作時(shí)的電壓分布不均衡問題進(jìn)行了分析,分析結(jié)果可為串聯(lián)IGBT電路的設(shè)計(jì)提供參考。 最后,根據(jù)上文的研究和分析結(jié)果,分析了柵極RCD均壓策略的均壓效果,并對(duì)均壓回路中各參數(shù)的選取原則進(jìn)行了討論,仿真結(jié)果證明了此均壓方法的有效性及參數(shù)匹配策略的合理性。
[Abstract]:HVDC technology plays a more and more important role in many fields, such as long-distance transmission, renewable energy generation, urban distribution network and distributed generation, etc. Commutation system is the core component of HVDC transmission system. With the development of power electronics technology, the voltage source converter based on insulated gate bipolar transistor (insulation gate bipolar transistor,) has been widely used in HVDC transmission. The series technology of IGBT module is very important to realize high-voltage and high-power output because of the higher DC voltage level in the flexible DC transmission system, which is much larger than the voltage that a single IGBT can withstand. Series technology requires high consistency of IGBT action, but because of the dispersion of IGBT parameters and peripheral circuit parameters, the dynamic process of IGBT switch is relatively short. The unbalanced voltage distribution of each series IGBT module in the switching dynamic process is particularly serious, which can lead to the damage of some devices because of the high overvoltage. Therefore, in order to ensure the safe operation of converter valve, it is necessary to study the factors that affect the voltage distribution imbalance in series IGBT and analyze it quantitatively. In order to solve the problem of voltage imbalance in series IGBT, the modeling of IGBT, the influence factors of voltage distribution in series IGBT and the voltage sharing strategy of grid RCD are studied and analyzed in this paper. The work is as follows: firstly, according to the structure and working principle of IGBT device, the dynamic behavior model of IGBT is established based on saber software, and the selection of model parameters and the validation method of model validity are studied in detail. The model can accurately reflect the switching dynamic process of IGBT. Secondly, two simulation circuits of IGBT series are built, and the factors that influence the voltage distribution in series are analyzed and summarized, and the influence degree of each factor is analyzed quantitatively. Thirdly, on the basis of the previous analysis, the equivalent circuit is established for seven series IGBT modules in one valve section of the voltage source converter, and the unbalanced voltage distribution in the series IGBT operation is analyzed. The results can provide reference for the design of series IGBT circuit. Finally, according to the above research and analysis results, the voltage equalizing effect of grid RCD is analyzed, and the selection principle of the parameters in the voltage sharing circuit is discussed. The simulation results show the effectiveness of the method and the rationality of the parameter matching strategy.
【學(xué)位授予單位】：華北電力大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM721.1

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 竇康樂;嚴(yán)仲明;李海濤;程志;吳銳;王豫;;大功率IGBT模塊串聯(lián)動(dòng)態(tài)均壓的研究[J];電測(cè)與儀表;2012年04期

2 李愛民，何湘寧，錢照明;超快速IGBT電路仿真模型及其參數(shù)靈敏度分析[J];電力電子技術(shù);1996年04期

3 陳雨林;許軍;馬曉軍;李坤;;絕緣柵雙極晶體管(IGBT)的實(shí)時(shí)仿真研究[J];電氣開關(guān);2010年05期

4 查申森;鄭建勇;;混合式斷路器的IGBT串聯(lián)均壓技術(shù)[J];電網(wǎng)技術(shù);2010年04期

5 鄭連清;羅洋;陸治國(guó);;電壓源換流器中IGBT串聯(lián)動(dòng)態(tài)均壓新方法[J];低壓電器;2012年07期

6 吳俊宏;艾芊;韓利;;含分布式電源的孤立電網(wǎng)穩(wěn)定性[J];高電壓技術(shù);2009年08期

7 蔣燕;羅洋;鄭連清;;基于增強(qiáng)密勒效應(yīng)的IGBT串聯(lián)有源均壓新方法[J];高壓電器;2012年04期

8 張建坡;趙成勇;孫一瑩;敬華兵;;基于電壓源換流器型直流輸電拓?fù)浣Y(jié)構(gòu)和調(diào)制策略[J];電網(wǎng)技術(shù);2013年06期

9 張亞蘇;;IGBT的驅(qū)動(dòng)和保護(hù)技術(shù)探析[J];中國(guó)新技術(shù)新產(chǎn)品;2010年07期

10 羅湘;湯廣福;查鯤鵬;賀之淵;;VSC-HVDC換流閥過電流關(guān)斷試驗(yàn)方法[J];中國(guó)電機(jī)工程學(xué)報(bào);2011年06期

，

本文編號(hào)：2076878