本文選題：憶阻器 + 建模��； 參考：《武漢科技大學(xué)》2014年碩士論文

【摘要】：隨著蔡少棠提出了憶阻器的概念以后，憶阻器被認(rèn)為是除電阻器、電容器、電感器外的第四種基本電路元件，它描述了電路理論中磁通量φ和電荷量q之間的關(guān)系。在隨后一段時(shí)間里憶阻器的研究沒有太大的進(jìn)展，直到2008年HP實(shí)驗(yàn)室制出了憶阻器實(shí)物才證實(shí)了蔡少棠的這一基本理論。因?yàn)閼涀杵骶哂屑{米級(jí)尺寸及記憶功能，在憶阻器模型分析、基礎(chǔ)電路分析、電子元件設(shè)計(jì)、集成電路以及神經(jīng)網(wǎng)絡(luò)等方面得到了研究學(xué)者的關(guān)注，使得憶阻器具有廣闊的應(yīng)用前景。 本文詳細(xì)分析了憶阻器的特性、工作原理，推導(dǎo)了荷控憶阻器及磁控憶阻器的模型。在此基礎(chǔ)上提出了一種荷控憶阻器的理論模型。然后對(duì)該模型進(jìn)行了SPICE電路仿真，仿真結(jié)果和惠普實(shí)驗(yàn)室給出的憶阻器物理模型的特性曲線一致，相比于Hyongsuk Kim所提出的憶阻器模型，改進(jìn)的憶阻器模型的優(yōu)勢(shì)在于Ro n、Ro ff的范圍可調(diào)、等效 離子遷移速率‖可調(diào)。 然后，，本文研究了荷控憶阻器的電荷特性和頻率特性，根據(jù)憶阻器的電荷特性和頻率特性研究了讀取憶阻器阻值的方法。在此基礎(chǔ)上，設(shè)計(jì)了兩種憶阻器阻值的寫入電路：一種是基于開關(guān)轉(zhuǎn)換的憶阻器阻值的寫入電路，另一種是一個(gè)反饋式的憶阻器阻值寫入電路。該憶阻器阻值寫入電路由憶阻器、運(yùn)算放大器、電壓跟隨器、單相半波整濾波電路和求差電路組成，通過(guò)高頻信號(hào)上加載低頻信號(hào)來(lái)實(shí)現(xiàn)憶阻器阻值的高精度寫入。經(jīng)過(guò)SPICE仿真實(shí)驗(yàn)的驗(yàn)證，該電路成功地實(shí)現(xiàn)了憶阻器阻值的高精度寫入功能。仿真結(jié)果驗(yàn)證了設(shè)計(jì)的正確性。
[Abstract]:After Cai Shaotang put forward the concept of resistor, it is considered as the fourth basic circuit element besides resistor, capacitor and inductor. It describes the relationship between magnetic flux 蠁 and charge quantity Q in circuit theory. In the following period of time, the research on the resistive device did not make much progress until 2008 when HP Labs produced the object of the resistive device to prove the basic theory of Cai Shao-tong. Because the device has nanometer size and memory function, it has attracted the attention of researchers in the fields of model analysis, basic circuit analysis, electronic component design, integrated circuit and neural network, etc. So that the amnesia device has a broad application prospects. In this paper, the characteristics and working principle of the resistor are analyzed in detail, and the models of the charge controlled resistor and the magnetic controlled resistor are derived. On this basis, a theoretical model of charge-controlled resistor is proposed. The simulation results are consistent with the characteristic curve of the physical model, compared with the model proposed by Hyongsuk Kim, the simulation results are consistent with that of the physical model proposed by Hewlett-Packard Labs, and the simulation results are consistent with that of the physical model of the device, which is proposed by Hyongsuk Kim. The advantage of the improved model lies in the adjustable range of Ro _ (nn) _ (ff) and the adjustable equivalent ion migration rate. Then, the charge characteristics and frequency characteristics of the charge controlled resistor are studied, and the method of reading the resistor resistance is studied according to the charge characteristic and frequency characteristic of the resistor. On the basis of this, two kinds of writing circuits are designed: one is based on switch conversion, the other is a feedback circuit. The circuit consists of a resistor, an operational amplifier, a voltage follower, a single-phase half-wave integrated filter circuit and a differential circuit. The high precision writing of the resistor resistance is realized by loading low-frequency signals on the high frequency signals. The circuit is verified by spice simulation experiment, and the high precision writing function of resistive resistor is realized successfully. The simulation results verify the correctness of the design.
【學(xué)位授予單位】：武漢科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM13

【參考文獻(xiàn)】

相關(guān)期刊論文 前3條

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2 胡舒凱;吳俊杰;周海芳;張擁軍;方旭東;;憶阻器存儲(chǔ)研究與展望[J];計(jì)算機(jī)研究與發(fā)展;2012年S1期

3 段宗勝;甘朝暉;王勤;;一種改進(jìn)的憶阻器的SPICE模型及其仿真[J];微電子學(xué)與計(jì)算機(jī);2012年08期

本文編號(hào)：2066383