本文選題：硅納米線陣列 + PECVD��； 參考：《常州大學(xué)》2014年碩士論文

【摘要】：硅納米線(SiNW)具有優(yōu)異的陷光特性,可以增加光的吸收，用核殼結(jié)構(gòu)設(shè)計徑向p-n結(jié)可以增加載流子的收集，因此硅納米線徑向p-n結(jié)太陽電池有非常廣闊的發(fā)展前景，是目前光伏領(lǐng)域研究的熱點之一。本論文利用金屬輔助化學(xué)刻蝕(MACE)法制備了硅納米線陣列，研究了制備條件對其結(jié)構(gòu)參數(shù)及減反性能的影響；并在此基礎(chǔ)上制備了Ag/AZO/(n+)/(i)/c-Si (p) NW陣列太陽能電池和硅納米線/聚(3,4-亞乙二氧基噻吩)-聚(苯乙烯磺酸)(SiNWs/PEDOT:PSS)雜化太陽能電池，討論分析了制備工藝對兩種結(jié)構(gòu)硅納米線太陽電池性能的影響。主要取得以下成果： 1、系統(tǒng)研究金屬輔助化學(xué)刻蝕工藝條件對制備的硅納米線陣列的形貌和陷光效果的影響，如刻蝕溶液中AgNO3濃度和刻蝕時間等，，當(dāng)AgNO3的濃度為0.02mol/L、刻蝕時間為10min時制備出反射率最低的硅納米線陣列，其在300-1100nm波長范圍內(nèi)的平均反射率僅為2.5%。 2、利用等離子體化學(xué)氣相沉積（PECVD）法在硅納米線陣列表面沉積了α-Si:H鈍化層，研究了等離子體功率和沉積時間對硅納米線陣列表面鈍化的影響。并制備了硅納米線太陽電池，研究了α-Si:H鈍化工藝對電池性能的影響，在長度為0.51μm的硅納米線上利用15W的等離子體功率沉積30min α-Si:H鈍化層，得到的開路電壓達(dá)到最大的0.50V。 3、利用PECVD法制備了具有不同微結(jié)構(gòu)的n型Si:H層，并在n型Si:H和AZO之間沉積了一層超薄的Al2O3層，制備出AZO/Si:H(n)/a-Si:H/c-Si(p)徑向結(jié)構(gòu)的硅納米線陣列太陽能電池。當(dāng)n型Si:H層的相從非晶態(tài)轉(zhuǎn)變?yōu)閮上嘟Y(jié)構(gòu)時，短路電流密度增加了16.2%。當(dāng)Al2O3厚度為0.77nm時，短路電路密度和光電轉(zhuǎn)換效率分別增大了10.2%和6.8%。 4、利用旋涂的方法在硅納米線上制備了SiNWs/PEDOT:PSS雜化太陽電池，初步研究了硅納米線與PEDOT:PSS的接觸、PEDOT:PSS的退火方式及載流子收集層對電池性能的影響。制備出了轉(zhuǎn)化效率為0.24%的雜化太陽電池，雖然目前制備出的電池效率較低，但所獲的結(jié)論對未來獲得高效率的雜化太陽電池有一定的參考價值。
[Abstract]:Silicon nanowires (SiNW) have excellent trapping characteristics, which can increase the absorption of light. The design of radial p-n junction with core-shell structure can increase the collection of carriers, so the silicon nanowire radial p-n junction solar cells have a very broad development prospect. It is one of the hotspots in the field of photovoltaic. In this paper, silicon nanowire arrays were prepared by metal assisted chemical etching (MACEE) method. The effects of preparation conditions on their structural parameters and anti-reflection properties were studied. On this basis, we have prepared Ag- / AZO / c-Si / NW array solar cells and silicon nanowire / poly (3-ethoxythiophene) -poly (styrene sulfonate / SiNWsPEDOT: PSSs) hybrid solar cells. The effect of preparation process on the performance of two kinds of silicon nanowire solar cells was discussed. The main achievements are as follows: 1. The effects of metal-assisted chemical etching conditions on the morphology and trapping effect of fabricated silicon nanowire arrays, such as Agno _ 3 concentration in etching solution and etching time, were studied systematically. When the concentration of Agno _ 3 is 0.02 mol / L and the etching time is 10min, a silicon nanowire array with the lowest reflectivity is prepared. The average reflectivity in the range of 300-1100nm wavelength is only 2.5 and 2.2.The 偽 -Si: h passivated layer was deposited on the surface of silicon nanowire array by plasma chemical vapor deposition (PECVD) method. The effects of plasma power and deposition time on surface passivation of silicon nanowire arrays were investigated. The effect of 偽 -Si: h passivation process on the performance of silicon nanowire solar cells was investigated. The 30min 偽 -Si: h passivated layer was deposited on silicon nanowires with a length of 0.51 渭 m by using 15W plasma power. The maximum open circuit voltage of 0.50V.3 was obtained. N type Si: h layer with different microstructures was prepared by PECVD method, and an ultrathin Al 2O 3 layer was deposited between n type Si: h and AZO. The silicon nanowire array solar cells with radial structure of AZO / Si / Si: n / a-Si: h / c-Sip have been prepared. The short-circuit current density increases by 16.2when the phase of n-type Si: h layer changes from amorphous to two-phase structure. When the thickness of Al _ 2O _ 3 is 0.77nm, the short-circuit density and photoelectric conversion efficiency increase by 10.2% and 6.8%, respectively. SiNWs / PEDOT: PSS hybrid solar cells are fabricated on silicon nanowires by spin-coating method. The contact of silicon nanowires with PEDOT: PSS and the effect of carrier collection layer on the performance of the battery were studied. A hybrid solar cell with a conversion efficiency of 0.24% was prepared. Although the efficiency of the hybrid solar cell is relatively low at present, the conclusions obtained are of certain reference value for obtaining high efficiency hybrid solar cells in the future.
【學(xué)位授予單位】：常州大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TM914.4

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相關(guān)期刊論文 前2條

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