石英襯底上超導(dǎo)鈮金屬薄膜的制備技術(shù)研究
發(fā)布時(shí)間:2018-06-15 02:27
本文選題:鈮超導(dǎo)薄膜 + 超導(dǎo)轉(zhuǎn)變溫度; 參考:《電子科技大學(xué)》2014年碩士論文
【摘要】:高質(zhì)量超導(dǎo)鈮金屬薄膜的超導(dǎo)轉(zhuǎn)變溫度(Tc)可達(dá)到9.3 K,能經(jīng)受多次高低溫循環(huán)而超導(dǎo)性能不降低,另外其還具有機(jī)械強(qiáng)度高、耐腐蝕等特點(diǎn)。因此自鈮超導(dǎo)薄膜實(shí)現(xiàn)以來(lái),就被迅速的應(yīng)用于國(guó)防、醫(yī)療、能源等諸多領(lǐng)域。目前通常采用磁控濺射法制備鈮超導(dǎo)薄膜,但是由于鈮金屬熔點(diǎn)高、易吸氧,在制備過(guò)程中鈮膜的質(zhì)量會(huì)受到多種因素的影響。因此本論文基于直流磁控濺射鍍膜法在石英襯底上開(kāi)展了高質(zhì)量的超導(dǎo)鈮金屬薄膜的制備工藝的研究。主要研究成果如下:首先采用簡(jiǎn)單的直流磁控濺射鍍膜設(shè)備在平面石英襯底上制備鈮膜,并通過(guò)X射線衍射儀(XRD)、原子力顯微鏡(AFM)、四探針電阻測(cè)試儀、綜合物性測(cè)量系統(tǒng)(PPMS)等分析手段來(lái)表征薄膜。研究發(fā)現(xiàn)制備的鈮膜為體心立方結(jié)構(gòu)的多晶薄膜,并沿(110)晶向擇優(yōu)生長(zhǎng)。通過(guò)研究不同工藝參數(shù)(濺射氣壓、襯底溫度、薄膜厚度、沉積速率、退火過(guò)程等)對(duì)鈮膜質(zhì)量的影響,發(fā)現(xiàn)濺射氣壓、襯底溫度、薄膜厚度等參數(shù)均對(duì)鈮膜的結(jié)晶狀況、內(nèi)部應(yīng)力、表面形貌、電性能有顯著地影響。通過(guò)參數(shù)優(yōu)化,在平面石英襯底上制備出了結(jié)晶質(zhì)量較好、表面光滑致密(RMS為2.88 nm)、內(nèi)部應(yīng)力(-0.31 GPa)較小、超導(dǎo)轉(zhuǎn)變溫度為9.07 K的鈮超導(dǎo)薄膜。其次通過(guò)改善鈮膜制備條件并結(jié)合鈮膜生長(zhǎng)規(guī)律,研究了襯底偏壓對(duì)磁控濺射制備鈮膜結(jié)構(gòu)和性能的影響,研究發(fā)現(xiàn):一定的襯底負(fù)偏壓(-100 V)會(huì)促使鈮膜電阻率增加,不利于提高鈮膜電性能。另外還利用鈮原子的“吸氣”特性,通過(guò)提高濺射功率在3.5×10-4 Pa的背景真空下制備出結(jié)晶質(zhì)量高、表面光滑致密(RMS為3.9 nm)、內(nèi)部應(yīng)力(約為-0.20 GPa)較小、超導(dǎo)轉(zhuǎn)變溫度為9.3 K的高質(zhì)量鈮超導(dǎo)薄膜。最后為制備可用于磁懸浮技術(shù)研究的球面鈮超導(dǎo)薄膜,本論文還通過(guò)改進(jìn)磁控濺射鍍膜設(shè)備的結(jié)構(gòu)并設(shè)計(jì)出球形襯底托盤,研究了不同運(yùn)動(dòng)狀態(tài)下球面鈮膜的厚度分布情況,并在表面光滑的實(shí)心石英球襯底上制備出附著性較好、表面電阻較低(電阻平均值為4.5?,電阻均方差為0.19)、膜厚分布較均勻的球面鈮金屬薄膜。
[Abstract]:The superconducting transition temperature (Tc) of the high quality superconducting niobium thin film can reach 9.3 K, which can withstand many high and low temperature cycles without decreasing the superconductivity. In addition, it also has the characteristics of high mechanical strength and corrosion resistance. Since the realization of niobium superconducting thin film, it has been applied to many fields such as national defense, medical treatment, energy and so on. At present, niobium superconducting films are prepared by magnetron sputtering, but the quality of niobium films is affected by many factors due to the high melting point of niobium metal and its easy oxygen absorption. Therefore, the preparation process of high quality superconducting niobium thin films on quartz substrate is studied based on DC magnetron sputtering. The main research results are as follows: firstly, a simple DC magnetron sputtering device is used to prepare niobium film on a planar quartz substrate, and an X-ray diffractometer (XRD), an atomic force microscope (AFM) and a four-probe resistance tester are used to prepare niobium films. Comprehensive physical property measurement system (PPMS) and other analytical means to characterize the film. It is found that the niobium film is a bulk-centered cubic polycrystalline film, which grows in a preferential direction along the crystal direction of 1 10). By studying the effect of different process parameters (sputtering pressure, substrate temperature, film thickness, deposition rate, annealing process, etc.) on the quality of niobium film, it is found that sputtering pressure, substrate temperature and film thickness all affect the crystallization of niobium film. The internal stress, surface morphology and electrical properties are significantly affected. By optimizing the parameters, niobium superconducting thin films with good crystallization quality, smooth and compact surface RMS of 2.88 nm, internal stress of -0.31 GPA and superconducting transition temperature of 9.07 K have been prepared on planar quartz substrates. Secondly, the influence of substrate bias on the structure and properties of niobium film prepared by magnetron sputtering is studied by improving the preparation conditions of niobium film and combining the growth rule of niobium film. It is found that a certain negative bias voltage of substrate can increase the resistivity of niobium film. It is unfavorable to improve the electrical properties of niobium film. In addition, by increasing the sputtering power at 3.5 脳 10 ~ (-4) Pa in a background vacuum, the niobium atoms were prepared with high crystallization quality, smooth and compact surface RMS of 3.9 nm and low internal stress (about -0.20 GPa) by using the "inspiratory" characteristics of niobium atoms. High quality niobium superconducting thin films with superconducting transition temperature of 9.3 K. Finally, in order to prepare spherical niobium superconducting films which can be used in magnetic levitation technology, the thickness distribution of spherical niobium films in different motion states is studied by improving the structure of magnetron sputtering equipment and designing a spherical substrate tray. The spherical niobium thin films with good adhesion and low surface resistance (average resistance 4.5g, resistance mean deviation 0.19g) and uniform film thickness distribution were prepared on the surface of solid quartz sphere with smooth surface.
【學(xué)位授予單位】:電子科技大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2014
【分類號(hào)】:TM26
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