本文選題：CIGS薄膜 + 磁控濺射法��； 參考：《哈爾濱工業(yè)大學(xué)》2015年碩士論文

【摘要】：銅銦鎵硒薄膜太陽能電池具有高轉(zhuǎn)換效率、穩(wěn)定性高、禁帶寬度可調(diào)等優(yōu)點(diǎn),一直備受關(guān)注,CIGS電池結(jié)構(gòu)復(fù)雜,分為背電極、吸收層、緩沖層、窗口層和減反層等多層,每層的薄膜質(zhì)量,直接影響CIGS電池的光電轉(zhuǎn)換效率、穩(wěn)定性等電池性能,CIGS層作為CIGS薄膜太陽能電池的P型層,制備時(shí),襯底的溫度對(duì)薄膜的質(zhì)量有較大的影響;i-Zn O帶隙3.3e V,是作為CIGS薄膜太陽能電池的的N型的理想材料;AZO薄膜與i-Zn O晶格匹配,作為透明電極。因此,進(jìn)一步研究薄膜的制備工藝和薄膜制備的新方法具有重大意義。本文主要對(duì)CIGS電池結(jié)構(gòu)中的吸收層(CIGS薄膜)和窗口層(i-Zn O和AZO薄膜)進(jìn)行探究,其主要研究內(nèi)容分為兩部分:(1)用四元合金靶材制備CIGS薄膜,主要研究了常溫生長CIGS薄膜后再后續(xù)退火、高溫生長CIGS薄膜后再后續(xù)退火、直接高溫生長CIGS薄膜這三個(gè)工藝過程對(duì)CIGS薄膜的影響;通過XRD、SEM等表征手段發(fā)現(xiàn),直接高溫生長得到的CIGS薄膜的結(jié)晶性和微觀形貌更為理想;對(duì)比不同直接高溫生長的CIGS薄膜,隨溫度升高,結(jié)晶性和載流子濃度均呈現(xiàn)先增加后降低的趨勢(shì),在工作壓強(qiáng)為1Pa,濺射功率為120W,襯底溫度為500℃時(shí),制備的薄膜晶粒尺寸大、表面平整、載流子濃度高、光響應(yīng)最好。(2)利用磁控濺射法和溶膠-凝膠法制備了i-Zn O和AZO薄膜,用磁控濺射法制備的i-Zn O薄膜,透過率均超過80%,隨濺射氣壓增加,晶粒變大,帶隙寬度增大;隨濺射功率的增加,晶粒也變大,但帶隙寬度減小。對(duì)溶膠-凝膠法,旋涂次數(shù)為11次時(shí)結(jié)晶性最好;旋涂次數(shù)小于7次時(shí),i-Zn O薄膜的透過率超過80%。與磁控濺射法相比,溶膠-凝膠法制備的i-Zn O薄膜較差,透射率差,光學(xué)吸收邊向長波方向移動(dòng)。對(duì)磁控濺射制備的AZO薄膜,隨濺射氣壓的增加電阻率先降低后增加,在0.7Pa時(shí),電阻率最低;隨濺射功率的增加,電阻率也是先降低后增加,在200W時(shí),電阻率最低。隨鋁摻雜量的增加,電阻率先降低后增加,當(dāng)摻雜濃度為5%時(shí),薄膜的電阻率最低;隨旋涂次數(shù)的增加,電阻率降低。
[Abstract]:Copper indium gallium selenium thin film solar cells have many advantages, such as high conversion efficiency, high stability, adjustable band gap and so on. The structure of CIGS cells is very complex, which can be divided into four layers: back electrode, absorption layer, buffer layer, window layer and antireflection layer. The film quality of each layer directly affects the photovoltaic conversion efficiency and stability of the CIGS cell. The CIGS layer is used as the P-type layer of the CIGS thin film solar cell. The substrate temperature has a great influence on the quality of the thin films. It is an ideal N-type material for CIGS thin film solar cells, which matches the lattice of i-Zn O and acts as a transparent electrode. Therefore, it is of great significance to further study the preparation process and the new method of thin film preparation. In this paper, the absorption layer of CIGS cell structure, the absorption layer of CIGS) and the window layer of i-Zn O and AZO thin films are studied. The main contents of this study are divided into two parts: 1) Quaternary alloy target is used to prepare CIGS thin films. In this paper, the effects of the three processes on the growth of CIGS films at room temperature and CIGS films at high temperature, and the direct growth of CIGS films at high temperature have been studied. The crystallinity and micromorphology of the CIGS films grown at high temperature were more ideal, and compared with the CIGS films grown at different direct high temperatures, the crystallinity and carrier concentration increased first and then decreased with the increase of temperature. When the working pressure is 1 Pa, the sputtering power is 120 W, the substrate temperature is 500 鈩，

本文編號(hào)：1972330