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對ZnO納米片薄膜的硫化—氧化后處理及其光電極應(yīng)用研究

發(fā)布時(shí)間:2018-05-28 15:38

  本文選題:染料敏化太陽電池 + 水熱法 ; 參考:《南京大學(xué)》2014年碩士論文


【摘要】:染料敏化太陽電池(Dye-sensitized Solar Cells, DSSCs),作為一種基于光電化學(xué)原理的光電轉(zhuǎn)換器件,因其簡單的制備工藝、相對低廉的成本及較高的光電轉(zhuǎn)換效率而受到人們的廣泛關(guān)注。與傳統(tǒng)的硅基太陽電池不同,染料敏化太陽電池主要由光電極、染料、電解液及對電極四部分構(gòu)成,其中,光電極承擔(dān)著吸附染料和傳導(dǎo)電子的作用,是DSSCs光電轉(zhuǎn)換的核心環(huán)節(jié)之一。迄今為止研究最多的的光電極材料主要為TiO2、ZnO及SnO2等,其中以TiO2效率最高。ZnO具有和TiO2相似的半導(dǎo)體特性和更大的電子遷移率,更有利于光生電子的傳輸。而且,ZnO還可通過多樣化的制備方法實(shí)現(xiàn)豐富的微觀形貌調(diào)控,使其成為DSSCs中最有可能替代TiO2的光電極材料。目前,多種ZnO納米結(jié)構(gòu)已被應(yīng)用于DSSCs光電極的制備,尤其以低維結(jié)構(gòu)最多。然而作為光電極應(yīng)用的低維的ZnO納米結(jié)構(gòu),如納米線、納米棒、納米管及納米片陣列等,雖然可發(fā)揮其載流子定向遷移的優(yōu)勢,但是其較小的比表面積限制了染料吸附量的提高,進(jìn)而限制了DSSCs器件的光捕獲能力。因此,如何制備出大比表面積的ZnO納米結(jié)構(gòu),是將其應(yīng)用于DSSCs光電極需要解決的重要問題之一本論文主要是在FTO(氟摻雜的SnO2)基底上生長ZnO納米片陣列,然后對其進(jìn)行硫化-氧化處理,研究硫化-氧化處理對ZnO納米片的結(jié)構(gòu)、結(jié)晶性等的影響。最后將硫化-氧化處理前后的ZnO納米片作為光電極應(yīng)用于DSSCs中,對電池光電轉(zhuǎn)換性能進(jìn)行比較研究。(1)使用水熱法在FTO基底上制備得到(110)取向的ZnO納米片,用硫代乙酰胺溶液通過水熱法對ZnO納米片進(jìn)行硫化處理,得到ZnS納米片。然后在空氣氛圍下,不同溫度下對ZnS納米片進(jìn)行熱氧化處理,研究確定由ZnS向ZnO轉(zhuǎn)變的溫度,大約在500℃左右可得到(002)取向的ZnO納米片。進(jìn)一步計(jì)算、分析了不同溫度熱氧化處理對樣品晶粒大小、晶格畸變的影響,發(fā)現(xiàn)熱氧化溫度越高,晶粒越大且晶格畸變度越小。最后研究不同溫度熱氧化處理對樣品光學(xué)帶隙的影響,結(jié)果顯示其光學(xué)帶隙都發(fā)生了一定紅移。(2)將硫化-氧化處理前后的ZnO納米片作為光電極應(yīng)用于DSSCs中,并對其光電轉(zhuǎn)換性能進(jìn)行了比較。通過掃描電子顯微鏡、比表面和孔徑分析儀進(jìn)一步分析造成這種性能差異的原因,結(jié)果表明硫化-氧化處理能增加ZnO納米片的比表面積,進(jìn)而有助于染料的吸附,使光電轉(zhuǎn)化性能有33%的提升。
[Abstract]:Dye-sensitized Solar cells (DSSCs), as a photoelectric conversion device based on photochemical principle, have attracted wide attention due to its simple preparation process, relatively low cost and high photoelectric conversion efficiency. Unlike traditional silicon based solar cells, dye sensitized solar cells are mainly composed of four parts: photoelectrode, dye, electrolyte and opposite electrode, in which the photoelectrode is responsible for the adsorption of dyes and conduction of electrons. DSSCs photoelectric conversion is one of the core links. So far, the most studied photoelectrode materials are TiO2ZnO and SnO2, among which TiO2 has similar semiconductor properties to TiO2 and larger electron mobility, which is more favorable for photoelectron transport. Moreover, it can be used to control the morphology of DSSCs by various preparation methods, which makes it the most likely photoelectrode material to replace TiO2 in DSSCs. At present, a variety of ZnO nanostructures have been used in the preparation of DSSCs photoelectrodes, especially in low dimensional structures. However, low-dimensional ZnO nanostructures, such as nanowires, nanorods, nanotubes and nanochip arrays, which are used as optoelectronic poles, may take advantage of their carrier directional migration. However, its small specific surface area limits the increase of dye adsorption, which limits the photocapture ability of DSSCs devices. Therefore, how to fabricate ZnO nanostructures with large specific surface area is one of the important problems to be solved in the application of DSSCs photoelectrodes. In this paper, ZnO nanoarrays are grown on FTO (fluorine-doped Sno _ 2) substrates. The effect of vulcanization-oxidation treatment on the structure and crystallinity of ZnO nanoparticles was studied. Finally, the ZnO nanocrystals before and after vulcanization-oxidation treatment were used as photoelectrodes in DSSCs. The photovoltaic conversion properties of the cells were compared. 1) the ZnO nanocrystals were prepared on FTO substrates by hydrothermal method. ZnO nanoparticles were vulcanized with thioacetamide solution by hydrothermal method to obtain ZnS nanoparticles. Then the ZnS nanocrystals were thermally oxidized at different temperatures in air atmosphere. The transition temperature from ZnS to ZnO was determined, and the ZnO nanocrystals were obtained at about 500 鈩,

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