本文選題：憶阻器 + 量化電路��； 參考：《國防科學(xué)技術(shù)大學(xué)》2014年碩士論文

【摘要】：憶阻器作為新出現(xiàn)的第四種基本電路元件,將會(huì)帶來傳統(tǒng)電子電路的巨大變革。憶阻器的模型研究是憶阻器應(yīng)用研究的基礎(chǔ)。ADC(Analog to Digital Converter)中的量化電路是能夠利用憶阻器改進(jìn)的重要電路之一。提出了一種憶阻器可變電阻模型的改進(jìn),將憶阻器的氧空缺數(shù)目和橫截面積納入可變電阻模型的模型構(gòu)建中。利用SPICE模型進(jìn)行了計(jì)算機(jī)仿真,結(jié)果證明模型的改進(jìn)與對(duì)憶阻器的阻抗變化分析相一致。設(shè)計(jì)了一種并聯(lián)憶阻器量化電路,提出了基于憶阻器并聯(lián)的量化電路結(jié)構(gòu),描述了量化過程,并優(yōu)化了量化結(jié)果讀取方法。該并聯(lián)憶阻器量化電路理論上能夠進(jìn)行高速率高精度的量化轉(zhuǎn)換,在模數(shù)轉(zhuǎn)換速率、功耗和體積等方面均優(yōu)于Y.V.憶阻器量化電路。通過計(jì)算機(jī)仿真證實(shí)了設(shè)計(jì)的可行性。
[Abstract]:The memristor, as a new fourth basic circuit element, will bring about great changes in the traditional electronic circuits. The model study of the memristor is one of the important circuits that can be improved by the memristor in the memristor application research base.ADC (Analog to Digital Converter). A kind of memristor variable resistance is proposed. The model is improved. The number of oxygen vacancies and the cross section area of the memristor are incorporated into the model of the variable resistance model. The computer simulation is carried out with the SPICE model. The results show that the improvement of the model is consistent with the impedance change analysis of the memristor. A parallel memory resistor quantizing circuit is designed and the amount of parallel connection based on the memristor is proposed. The structure of the circuit describes the quantization process and optimizes the method of reading the quantized result. The parallel memristor quantization circuit can carry out the high speed and high precision quantization conversion in theory. It is superior to the Y.V. memristor quantization circuit in the analog to digital conversion rate, power consumption and volume. The feasibility of the design is verified by computer simulation.
【學(xué)位授予單位】：國防科學(xué)技術(shù)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM502
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本文編號(hào)：1925120