局部表面電導(dǎo)率法測量絕緣子憎水性表面的污穢分布
發(fā)布時間:2018-05-20 18:12
本文選題:絕緣子 + 憎水性。 參考:《高電壓技術(shù)》2014年04期
【摘要】:局部表面電導(dǎo)率可以用來有效地表征絕緣子污穢度,但是,對于憎水性表面局部電導(dǎo)率的測量存在困難。為此,通過滴高嶺土懸濁液將憎水性局部表面改變?yōu)橛H水性表面并測量局部區(qū)域電導(dǎo)率的新方法,實現(xiàn)了憎水性表面局部電導(dǎo)率的測量。通過對現(xiàn)場絕緣子憎水性表面局部的電導(dǎo)率測量,將新方法與等值鹽密法進(jìn)行了對比以驗證新方法的有效性,同時分析了2種測量方法的測量結(jié)果存在差異的原因。研究發(fā)現(xiàn):電場作用、絕緣子表面材料、環(huán)境氣候等因素均會對絕緣子表面的污穢分布造成影響:直流換流站中正極性設(shè)備的積污普遍重于負(fù)極性設(shè)備;同樣的外界條件下,RTV表面積污重于復(fù)合硅橡膠表面;降雨較少的地區(qū)迎風(fēng)面積污重于背風(fēng)面,降雨較多的氣候下背風(fēng)面積污重于迎風(fēng)面。相關(guān)研究方法及結(jié)論,可用以對絕緣子憎水性表面的積污規(guī)律進(jìn)行長期的研究分析。
[Abstract]:The local surface conductivity can be used to characterize the contamination of insulators effectively, but it is difficult to measure the local conductivity of hydrophobic surface. Therefore, a new method of changing hydrophobic local surface to hydrophilic surface and measuring the local conductivity of hydrophobic surface was developed by dropping kaolin suspension solution to realize the measurement of local conductivity of hydrophobic surface. By measuring the local conductivity of the hydrophobic surface of insulators in situ, the new method is compared with the equivalent salt density method to verify the effectiveness of the new method, and the reasons for the difference between the two methods are analyzed. It is found that the influence of electric field, insulator surface material and environmental climate on the distribution of pollution on the insulator surface is obvious: the deposition of the positive polarity equipment in DC converter station is generally more serious than that of the negative polarity equipment; Under the same external conditions, the surface area pollution of RTV is heavier than that of composite silicone rubber, and the upwind area pollution is more serious in the area with less rainfall than the leeward surface, and the leeward area pollution is more serious in the climate with more rainfall than on the upwind surface. The relevant research methods and conclusions can be used to study and analyze the fouling law of insulator hydrophobic surface for a long time.
【作者單位】: 清華大學(xué)深圳研究生院;南方電網(wǎng)科學(xué)研究院;
【基金】:國家重點基礎(chǔ)研究發(fā)展計劃(973計劃)(2009CB724503) 南網(wǎng)重大科技項目~~
【分類號】:TM216
【參考文獻(xiàn)】
相關(guān)期刊論文 前10條
1 黃超鋒;張仁豫;;絕緣子污閃性能與污穢度表示方法的關(guān)系[J];電瓷避雷器;1991年02期
2 關(guān)志成,崔國順,董穎;局部表面電導(dǎo)率法及其應(yīng)用[J];電瓷避雷器;1994年02期
3 錢茂華,,崔國順,關(guān)志成;用局部表面電導(dǎo)率劃分污穢等級[J];電瓷避雷器;1994年06期
4 郭賢珊;宿志一;樂波;;特高壓直流換流站支柱絕緣子設(shè)計[J];電網(wǎng)技術(shù);2007年24期
5 唐炬,謝軍,孫才新,張建輝,顧樂觀,陳明英,廖瑞金;直流電壓下支柱絕緣子在高海拔淋雨狀態(tài)下的放電特性[J];高電壓技術(shù);1989年04期
6 張仁豫,關(guān)志成,薛家麒,馬霜;局部表面電導(dǎo)率——表征絕緣子污穢程度的一種新方法[J];高電壓技術(shù);1990年01期
7 楊皓麟;張福增;趙鋒;王黎明;關(guān)志成;;高海拔地區(qū)±800kV復(fù)合支柱絕緣子直流污閃特性[J];高電壓技術(shù);2009年04期
8 王康;王建國;江健武;趙靈;方春華;段紹輝;;涂覆RTV對瓷絕緣子鹽密和灰密影響的對比觀測[J];高電壓技術(shù);2012年04期
9 徐志鈕;律方成;李Z
本文編號:1915705
本文鏈接:http://sikaile.net/kejilunwen/dianlilw/1915705.html
最近更新
教材專著