本文選題：金剛石切割 + 制絨　； 參考：《大連理工大學(xué)》2015年碩士論文

【摘要】：隨著太陽能電池技術(shù)發(fā)展的深入,單晶硅太陽能電池實(shí)驗(yàn)室轉(zhuǎn)換效率進(jìn)展明顯,但在工業(yè)生產(chǎn)中單晶硅太陽能電池轉(zhuǎn)換效率與太陽能電池實(shí)驗(yàn)室轉(zhuǎn)換效率差異較大。為了適應(yīng)大規(guī)模工業(yè)生產(chǎn),人們對硅片的切割方式上進(jìn)行改變,采用金剛石線切割進(jìn)行硅片的生產(chǎn),但金剛石線鋸切割設(shè)備昂貴,并且由于硅片切割表面應(yīng)力較大,碎片較嚴(yán)重,采用傳統(tǒng)電池制造工藝制絨效果不好,電池片轉(zhuǎn)換效率提升不明顯,本文提出了適合大規(guī)模工業(yè)生產(chǎn)的設(shè)備改造方法,并提出相關(guān)生產(chǎn)工藝參數(shù),對改造后的設(shè)備生產(chǎn)的金剛切硅片進(jìn)行研究。通過對傳統(tǒng)砂漿切設(shè)備改造及生產(chǎn)工藝進(jìn)行調(diào)整,利用樹脂金剛線生產(chǎn)金剛切單晶硅片,與金剛切專用設(shè)備生產(chǎn)的硅片進(jìn)行數(shù)據(jù)對比,結(jié)果表明采用生產(chǎn)工藝優(yōu)化后的改造設(shè)備生產(chǎn)的金剛切硅片,在硅片厚度、TTV、碎片率上比金剛切專用設(shè)備生產(chǎn)的硅片有優(yōu)勢；同時(shí)與傳統(tǒng)砂漿切單晶硅片進(jìn)行表面形貌特征,表面損傷層方面的對比分析,得出金剛切硅片表面存在切割線痕,而砂漿切硅片表面無明顯切割線痕,在掃描電子顯微鏡的觀測下,金剛切硅片表面損傷層比砂漿切硅片表面最小損傷層小7μ m,同時(shí)由于金剛切硅片表面存在相對光滑區(qū)域,金剛切硅片在全光譜范圍內(nèi)的的反射率要高于砂漿切硅片反射率。由于金剛切硅片表面損傷層較小,在制絨過程中腐蝕難度很大,采用傳統(tǒng)制絨工藝金剛切硅片并不能形成較好的表面金字塔結(jié)構(gòu),制絨完成后的反射率要高于砂漿切硅片。我們對金剛切硅片的制絨工藝進(jìn)行了研究優(yōu)化,對制絨后的反射率以及金字塔表面形貌進(jìn)行了測試,得到了一個(gè)最優(yōu)的制絨方案,金剛切硅片優(yōu)化制絨方案后得到的反射率要低于砂漿切硅片的反射率。我們分別利用金剛切制絨硅片以及砂漿切硅片制備了各一千張的電池片,并且對電池片的電學(xué)性能進(jìn)行了測試分析,金剛切電池片在開路電壓、短路電流都稍有提升,在最終的效率上比砂漿切電池片高0.17%。
[Abstract]:With the development of solar cell technology, the conversion efficiency of monocrystalline silicon solar cell laboratory has made great progress, but the conversion efficiency of single crystal silicon solar cell is quite different from that of solar cell laboratory in industrial production. In order to adapt to large-scale industrial production, people change the cutting mode of silicon wafer, and adopt diamond wire cutting to produce silicon wafer. But diamond wire saw cutting equipment is expensive, and because of the high surface stress of silicon chip cutting, The debris is serious, the effect of making pile by traditional battery manufacturing process is not good, and the conversion efficiency of battery chip is not obvious. This paper puts forward the method of equipment transformation suitable for large-scale industrial production, and puts forward the relevant production process parameters. The research on the silicon chip produced by the modified equipment was carried out. Through the modification of the traditional mortar cutting equipment and the adjustment of the production technology, the single crystal silicon wafer was produced by using resin diamond wire, and the data was compared with the silicon chip produced by the special equipment. The results show that the chip produced by the modified equipment with optimized production process has advantages over that produced by the special equipment of diamond cutting in the thickness of silicon wafer TTV, and the surface morphology characteristics of single crystal silicon wafer cut with traditional mortar. By comparing and analyzing the surface damage layer, it is concluded that there are cutting line marks on the surface of the diamond cut silicon wafer, while there is no obvious cut line mark on the surface of the mortar cut silicon wafer, which is observed by the scanning electron microscope. The surface damage layer is 7 渭 m smaller than the minimum damage layer on the surface of mortar cut silicon wafer. At the same time, due to the relatively smooth area on the surface of the diamond cut silicon wafer, the reflectivity of the diamond cut silicon wafer in the whole spectrum range is higher than that of the mortar cut silicon wafer. Due to the small damage layer on the surface of the wafer, it is very difficult to corrode in the process of making velvet. The traditional technology of making silicon wafer can not form a better surface pyramid structure, and the reflectivity of the finished velvet is higher than that of the silicon chip cut by mortar. We have studied and optimized the velvet making process of the silicon wafer, tested the reflectivity and the surface morphology of the pyramid, and got an optimal velvet making scheme. The reflectivity of silicon chip is lower than that of mortar cutting silicon chip. We prepared a thousand battery-chips each by using the diamond chip and the mortar chip, and tested and analyzed the electrical properties of the battery chip. The open-circuit voltage and short-circuit current of the chip were all slightly improved. The final efficiency is 0.17% higher than the mortar cut battery chip.
【學(xué)位授予單位】：大連理工大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TM914.4

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本文編號：1911291