本文選題：金屬有機(jī)化學(xué)氣相沉積 + 分子束外延��； 參考：《河北工業(yè)大學(xué)》2015年碩士論文

【摘要】：近些年來(lái),半導(dǎo)體材料在太陽(yáng)能發(fā)電系統(tǒng)的應(yīng)用方面研究已經(jīng)大幅成長(zhǎng)。由于III-V族化合物多結(jié)太陽(yáng)電池具有多能隙組合與直接能隙材料對(duì)光的高吸收率等優(yōu)點(diǎn)受到了越來(lái)越多的關(guān)注。Ge基多結(jié)電池是太空用最具潛力的電池結(jié)構(gòu)。本論文研究了Ge基電池中所使用的III-V族半導(dǎo)體材料生長(zhǎng)與其性能,所得成果如下:(1)用MOVPE生長(zhǎng)了帶有AlAs超薄插入層的GaInP試樣,并用高分辨透射電子顯微鏡(HRTEM)、光致發(fā)光譜(PL),拉曼光譜(Raman)和表面形貌測(cè)試等手段表征了它們的結(jié)構(gòu)和光學(xué)性質(zhì)。5?的Al As插入層導(dǎo)致了由[Ge(Ga,In)-V(Ga,In)]絡(luò)合物引起的PL寬峰強(qiáng)度的減弱。加入AlAs插入層后,Ga InP的有序度得到了提高。當(dāng)AlAs插入層的厚度由5?上升到5 nm時(shí),為了降低界面應(yīng)變能,有序度進(jìn)一步得到提高。另一方面,在時(shí)間分辨光致發(fā)光譜中,我們觀察到了雙指數(shù)衰減曲線,其中的快過(guò)程對(duì)應(yīng)有序態(tài)GaInP的帶帶躍遷,慢過(guò)程對(duì)應(yīng)局域態(tài)的躍遷。隨著AlAs層的加入和厚度的增加,GaInP有序度增加,PL的衰減壽命隨之增加。(2)用全固態(tài)源MBE設(shè)備生長(zhǎng)了GaAs/Ge和GaInP/Ge系列的樣品,并通過(guò)透射電子顯微鏡(TEM),光致發(fā)光譜(PL),和拉曼光譜(Raman)對(duì)它們的結(jié)構(gòu)和光學(xué)性質(zhì)進(jìn)行了表征。在含有較多反向疇的GaAs/Ge試樣中(Ge03和Ge07),可以觀察到一個(gè)位于1.75eV處的反常的PL發(fā)光峰。通過(guò)1 nm的GaAs緩沖層退火工藝,促進(jìn)了界面處反向疇的自湮滅,從而基本消除了此反常的發(fā)光峰(Ge08)。在GaInP/Ge系列的樣品中,通過(guò)對(duì)520℃(Ge25)和480℃(Ge26)兩種不同溫度下生長(zhǎng)的樣品的發(fā)光性質(zhì)研究,我們發(fā)現(xiàn)生長(zhǎng)溫度越高,本征發(fā)光峰的強(qiáng)度越弱。由于生長(zhǎng)溫度較高時(shí)導(dǎo)致了組分分布不均,PL發(fā)光峰的峰位隨著測(cè)試位置的變化發(fā)生了一定程度的偏移。退火后樣品(Ge14)的PL峰位發(fā)生了一定程度的紅移,此紅移來(lái)源于退火后In組分的飄移。在低溫下(TC=460-470℃)生長(zhǎng)的Ga InP外延層,通過(guò)對(duì)其光學(xué)性質(zhì)的研究,發(fā)現(xiàn)有序和無(wú)序態(tài)共存,材料中并不存在與缺陷能級(jí)有關(guān)的輻射復(fù)合發(fā)光中心。當(dāng)溫度升高時(shí),載流子由于熱激發(fā)更趨向于通過(guò)有序GaInP材料中的帶尾態(tài)進(jìn)行復(fù)合。
[Abstract]:In recent years, the application of semiconductor materials in solar power systems has grown dramatically. Due to the advantages of III-V family compound multijunction solar cells, such as multigap combination and high absorptivity of direct energy gap materials, more and more attention has been paid to the fact that the GE base multijunction solar cells are the most promising structures for space applications. In this paper, the growth and properties of III-V semiconductor materials used in GE based batteries are studied. The results obtained are as follows: (1) GaInP samples with AlAs ultrathin intercalation layer were grown by MOVPE. Their structures and optical properties were characterized by means of high resolution transmission electron microscopy (HRTEM), photoluminescence (PL), Raman spectroscopy (Raman) and surface morphology measurements. The Al as intercalation layer leads to the decrease of the PL peak intensity caused by the [Geo GaN In-VN] complex. The order degree of Ga InP was improved with the addition of AlAs insertion layer. When AlAs inserts the thickness of the layer from 5? In order to decrease the interfacial strain energy, the degree of order is further improved when the interfacial strain energy reaches 5 nm. On the other hand, in the time-resolved photoluminescence, we have observed the double exponential decay curve, in which the fast process corresponds to the band transition of ordered GaInP, and the slow process corresponds to the transition of local state. With the addition of the AlAs layer and the increase of the thickness, the decay life of the PL increases with the increase of the ordering degree of GaInP.) the samples of GaAs/Ge and GaInP/Ge series have been grown by all-solid-state MBE equipment. Their structures and optical properties were characterized by transmission electron microscopy (TEM), photoluminescence (PL) and Raman spectroscopy (Raman). In GaAs/Ge samples containing more reverse domains, a anomalous PL emission peak at 1.75eV can be observed. By annealing at 1 nm of GaAs buffer layer, the self-annihilation of the reverse domain at the interface is promoted, and the anomalous luminescence peak Ge08N is basically eliminated. In the GaInP/Ge series samples, the luminescence properties of the samples grown at 520 鈩，

本文編號(hào)：1844605