本文選題：PZ反鐵電薄膜 + 能量存儲密度　； 參考：《湘潭大學(xué)》2014年碩士論文

【摘要】：脈沖高功率技術(shù)是當(dāng)今高新技術(shù)的重要發(fā)展方向，儲能電容器作為脈沖高功率電源的關(guān)鍵元件，在整個設(shè)備中占有很大的比重，是極為重要的關(guān)鍵部件。反鐵電材料因具有很高的理論儲能密度，特別適合用于制作脈沖高功率儲能電容器，近年來引起了研究者的關(guān)注。PbZrO3(PZ)是一種典型的鈣鈦礦反鐵電材料，是最有前景的脈沖高功率電源用新型反鐵電儲能介質(zhì)材料。但是，目前實驗制備的PZ反鐵電薄膜的能量存儲密度較低，不能滿足實際應(yīng)用。因此，進一步提高PZ反鐵電薄膜的能量存儲密度是實現(xiàn)其在脈沖高功率電源的應(yīng)用的首要任務(wù)。本論文圍繞改進PZ反鐵電薄膜的儲能性能來展開研究工作。主要研究工作與結(jié)果如下： 1.單一PZ反鐵電薄膜的制備及儲能性能分析 采用溶膠-凝膠法在Pt(111)/Ti/SiO2/Si襯底上制備了PZ反鐵電薄膜，探索了薄膜生長的最佳退火溫度和退火時間，并表征了其微觀結(jié)構(gòu)和電學(xué)性能。實驗結(jié)果表明，在700oC下退火20min時，PZ薄膜性能最好，在最大500kV/cm外加電場下，，其最大極化強度(Pmax)和最大儲能密度分別為70.3μC/cm2和13.52J/cm3。 2.不同結(jié)構(gòu)的PZ/BT-BMT復(fù)合薄膜的制備及儲能性能分析 將PZ反鐵電薄膜和具有高介電常數(shù)、高耐電場擊穿強度的0.88BaTiO3-0.12Bi(Mg0.5,Ti0.5)O3(BT-BMT)鐵電薄膜結(jié)合在一起形成不同結(jié)構(gòu)的復(fù)合薄膜，分別研究了疊層結(jié)構(gòu)、夾心結(jié)構(gòu)、交錯結(jié)構(gòu)復(fù)合薄膜的微結(jié)構(gòu)及電學(xué)性能。對于疊層結(jié)構(gòu)復(fù)合薄膜，最大電場下的Pmax為90.9μC/cm2，最大儲能密度為15.3J/cm3；對于夾心結(jié)構(gòu)復(fù)合薄膜，最大電場下的Pmax為92.2μC/cm2，最大儲能密度為19.9J/cm3；對于交錯結(jié)構(gòu)復(fù)合薄膜，最大電場下的Pmax為95.7μC/cm2，最大儲能密度為24.7J/cm3。以上結(jié)果表明，采用與BT-BMT鐵電薄膜復(fù)合的方法能有效提高PZ反鐵電薄膜的儲能密度。 3. PZ/BT-BMT復(fù)合薄膜退火工藝的改進及儲能性能分析 改進復(fù)合薄膜的退火工藝，采用逐層退火的方法制備復(fù)合薄膜，即每甩完一層薄膜都進行干燥、熱分解和退火處理。和一次退火的復(fù)合薄膜相比，逐層退火的復(fù)合薄膜儲能性能得到顯著改善。逐層退火的夾心復(fù)合薄膜最大儲能密度為28.4J/cm3，逐層退火的交錯復(fù)合薄膜最大儲能密度為33J/cm3。這歸因于逐層退火的復(fù)合薄膜極化取向度更高，從而具有更大的極化強度和更高的儲能密度。
[Abstract]:Pulse high power technology is an important development direction of modern high technology. As a key component of pulse high power supply, energy storage capacitor occupies a large proportion in the whole equipment and is an extremely important key component. Because of its high theoretical energy storage density, antiferroelectric materials are especially suitable for making pulsed high-power energy storage capacitors. In recent years, anti-ferroelectric materials have attracted the attention of researchers. PbZrO3PZ) is a typical perovskite antiferroelectric material. It is the most promising new anti-ferroelectric energy storage dielectric material for pulsed high power power supply. However, the PZ antiferroelectric thin films have low energy storage density and can not meet the practical application. Therefore, further improving the energy storage density of PZ antiferroelectric thin film is the most important task to realize the application of PZ antiferroelectric thin film in pulsed high power power supply. This thesis focuses on improving the energy storage performance of PZ antiferroelectric thin films. The main work and results are as follows: 1. Preparation of a single PZ antiferroelectric thin film and analysis of its energy storage performance PZ antiferroelectric thin films were prepared on Pt(111)/Ti/SiO2/Si substrates by sol-gel method. The optimum annealing temperature and annealing time were investigated. The microstructure and electrical properties of PZ antiferroelectric thin films were characterized. The experimental results show that the PZ films annealed at 700oC have the best properties, and the maximum polarization intensity and energy storage density are 70.3 渭 C/cm2 and 13.52 J / cm _ 3 under the maximum external electric field of 500kV/cm, respectively. 2. Preparation and Energy Storage Properties of PZ/BT-BMT Composite Films with different structures PZ antiferroelectric thin films and 0.88BaTiO3-0.12BiTiO3-0.12BiO0.12BT-BMT-based ferroelectric thin films with high dielectric constant and high electric field breakdown strength were combined to form composite thin films with different structures. The laminated and sandwich structures were studied, respectively. Microstructure and electrical properties of interleaved composite films. For laminated composite films, the Pmax is 90.9 渭 C / cm ~ (2) and the maximum energy storage density is 15.3J / cm ~ (-3) under the maximum electric field, the Pmax is 92.2 渭 C / cm ~ (2) and the maximum energy storage density is 19.9J / cm ~ (3) for sandwich structure composite films. Under the maximum electric field, the Pmax is 95.7 渭 C / cm ~ (2) and the maximum energy storage density is 24.7 J / cm ~ (3). The results show that the energy storage density of PZ antiferroelectric thin films can be effectively increased by using the composite method with BT-BMT ferroelectric thin films. 3. Improvement of annealing process for PZ/BT-BMT Composite Films and Analysis of their Energy Storage Properties The annealing process of the composite films was improved. The composite films were prepared by layer by layer annealing, that is, the films were dried, thermal decomposed and annealed each time. Compared with the single annealed composite films, the energy storage properties of the films annealed layer by layer have been significantly improved. The maximum energy storage density of sandwich composite films annealed layer by layer is 28.4J / cm ~ 3, and that of interleaved composite films annealed layer by layer is 33J / cm _ 3. This is attributed to the higher polarization orientation of the films annealed layer by layer, resulting in higher polarization intensity and higher energy storage density.
【學(xué)位授予單位】：湘潭大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2014
【分類號】：TM221;TB383.2

【參考文獻】

相關(guān)期刊論文 前1條

1 趙波;唐先忠;唐翔;閆裔超;;新型電容器用高介電常數(shù)聚合物研究進展[J];材料導(dǎo)報;2009年S1期

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