本文選題：MTVS + 電弧運(yùn)動(dòng)��； 參考：《華中科技大學(xué)》2014年博士論文

【摘要】：多棒極型觸發(fā)真空開(kāi)關(guān)(Triggered Vacuum Switch with multi-rod electrode,簡(jiǎn)稱(chēng)MTVS)的電極結(jié)構(gòu)由多對(duì)棒狀電極相互交錯(cuò)排列形成多個(gè)間隙,實(shí)現(xiàn)了電弧的多通道發(fā)展,避免了電弧的集聚,從而具有轉(zhuǎn)移庫(kù)侖量高、通流能力強(qiáng)、工作電壓范圍寬,觸發(fā)電壓低、壽命長(zhǎng)等優(yōu)點(diǎn)。本文根據(jù)脈沖功率系統(tǒng)和配電網(wǎng)系統(tǒng)中的不同應(yīng)用需求,從電弧運(yùn)動(dòng)機(jī)理、電極結(jié)構(gòu)優(yōu)化、極性效應(yīng)、負(fù)極性觸發(fā)特性以及大電流高庫(kù)侖通流壽命等方面對(duì)MTVS進(jìn)行研究,從而為此種開(kāi)關(guān)的設(shè)計(jì)和推廣提供理論依據(jù)和參考。 建立了MTVS導(dǎo)通時(shí)的三維仿真模型,對(duì)在不同通流情況下其內(nèi)部的縱向和橫向磁場(chǎng)分布進(jìn)行計(jì)算分析,同時(shí)還對(duì)不同導(dǎo)通情況下電弧弧柱以及棒狀電極的受力情況及其影響因素進(jìn)行了分析,仿真結(jié)果表明：在單個(gè)棒棒間隙導(dǎo)通時(shí)橫向磁場(chǎng)占主導(dǎo)作用,而所有間隙導(dǎo)通時(shí)縱向磁場(chǎng)占主導(dǎo)地位,從而使得真空電弧能夠在MTVS內(nèi)部保持運(yùn)動(dòng)狀態(tài),這也是MTVS具有的高通流能力的本質(zhì)原因；部分間隙導(dǎo)通時(shí)電弧通道和電極主要受到背向電極中心的徑向電磁力,而所有間隙導(dǎo)通時(shí)則主要受指向電極中心的徑向電磁力的作用。 采用CMOS高速攝像機(jī)系統(tǒng)對(duì)MTVS中電弧的整體發(fā)展過(guò)程進(jìn)行觀測(cè),并對(duì)電弧運(yùn)動(dòng)速率進(jìn)行測(cè)量分析,研究發(fā)現(xiàn)在MTVS內(nèi)的電弧運(yùn)動(dòng)速度最快可以達(dá)到1000m/s以上。在電流上升階段真空電弧運(yùn)動(dòng)速度較快,且電弧亮度高；而在電流下降階段電弧運(yùn)動(dòng)速度慢,且電弧光亮低,同時(shí)還出現(xiàn)了電弧停滯的現(xiàn)象。在電流峰值小于20kA時(shí)電弧只充滿(mǎn)了部分間隙,當(dāng)電流峰值大于20kA時(shí)電弧幾乎充滿(mǎn)MTVS所有間隙。 采用有限元法對(duì)MTVS的靜電場(chǎng)分布進(jìn)行計(jì)算分析,并對(duì)其主電極結(jié)構(gòu)進(jìn)行優(yōu)化設(shè)計(jì),主要分析電極邊緣的倒角半徑等結(jié)構(gòu)參數(shù)對(duì)其電場(chǎng)畸變系數(shù)的影響,計(jì)算結(jié)果表明當(dāng)MTVS的頂端面倒角半徑取5mm且棒極側(cè)面邊緣倒角半徑取3mm時(shí),可以使其電場(chǎng)畸變系數(shù)降低到最小值3。 對(duì)MTVS的極性效應(yīng)進(jìn)行仿真研究,并對(duì)其在不同極性條件下的觸發(fā)特性進(jìn)行實(shí)驗(yàn)研究。研究表明MTVS的特殊結(jié)構(gòu)決定了初始等離子體的擴(kuò)散過(guò)程在正負(fù)極性配置下有很大的差別,因此MTVS具有較強(qiáng)的極性效應(yīng),當(dāng)工作在正極性配置下時(shí)其觸發(fā)可靠性高,觸發(fā)時(shí)延及分散性小,然而在負(fù)極性配置下觸發(fā)很困難,觸發(fā)失敗率較高。本文提出雙MTVS反向并聯(lián)的方式成功解決其在交流模式下的觸發(fā)可靠性問(wèn)題。 最后對(duì)優(yōu)化前后的MTVS樣品的通流及壽命特性進(jìn)行了實(shí)驗(yàn)研究,實(shí)驗(yàn)結(jié)果表明：(1)在電流峰值為100kA且脈寬為600μs單次轉(zhuǎn)移電荷45C的條件下,MTVS的壽命大于1000次,且在通流100次之后其觸發(fā)電壓會(huì)達(dá)到一個(gè)穩(wěn)定狀態(tài)；而且MTVS的極限峰值電流為250kA,極限di/dt最高為9.1kA/μs；(2)在峰值為30kA脈寬為10ms單次庫(kù)侖轉(zhuǎn)移量為120C時(shí)壽命可以達(dá)到1000次以上,而且在通流200次之后其觸發(fā)時(shí)延相對(duì)穩(wěn)定在5μs左右,而觸發(fā)電壓也相對(duì)穩(wěn)定在40-1000V范圍內(nèi)；在峰值電流為65kA且脈寬為22ms單次轉(zhuǎn)移庫(kù)侖量為402C的脈沖電流作用下,MTVS的壽命大于30次,觸發(fā)時(shí)延在1-9μs范圍內(nèi)；(3)電極結(jié)構(gòu)優(yōu)化之后的MTVS的耐壓特性有了明顯提高,其最低平均直流擊穿電壓提高了62.8%；電極材料為銅鉻合金的MTVS的最低平均直流擊穿電壓要比無(wú)氧銅MTVS的高出20%,且觸發(fā)時(shí)延及分散性較小,觸發(fā)電壓相對(duì)較高。
[Abstract]:The electrode structure of Triggered Vacuum Switch with multi-rod electrode, abbreviated to MTVS, is arranged by multiple interlaced rod electrodes to form a number of gaps, realizing multi channel development of the arc and avoiding the agglomeration of the arc, thus having high transfer Coulomb, strong flow ability, wide working voltage range, and a wide range of working voltage. According to the different application requirements of the pulse power system and the distribution network system, this paper studies the MTVS from the arc movement mechanism, the electrode structure optimization, the polarity effect, the negative polarity triggering characteristic and the high current high coulomb flow life, so as to provide the theoretical basis for the design and popularization of this kind of switch. And reference.
The three-dimensional simulation model of MTVS conduction is established. The distribution of the longitudinal and lateral magnetic fields in the different flow conditions is calculated and analyzed. At the same time, the force situation and the influence factors of arc arc column and bar electrode are analyzed under different conduction conditions. The simulation results show that the transverse direction of a single bar rod clearance is transversal. The main role of the magnetic field is that the longitudinal magnetic field dominates all gaps, thus making the vacuum arc capable of maintaining the motion state within the MTVS, which is the essential reason for the high flux capacity of the MTVS; the arc channel and electrode are mainly radial electromagnetic forces at the center of the back electrode while the clearance is guided, and all gaps are in the gap. When conducting, it is mainly affected by the radial electromagnetic force of the center of the electrode.
The CMOS high-speed camera system is used to observe the overall development process of the arc in the MTVS, and the arc motion rate is measured and analyzed. It is found that the speed of the arc movement in the MTVS can reach the fastest speed above 1000m/s. In the stage of current rising, the velocity of the vacuum arc is faster and the arc brightness is high; and the electric current is in the stage of decreasing electric current. The arc velocity is slow and the arc light is low. At the same time, the arc stagnation appears. When the peak of current is less than 20kA, the arc is filled with only some gaps. When the peak current is greater than 20kA, the arc is almost full of all MTVS gaps.
The finite element method is used to calculate and analyze the distribution of the electrostatic field of MTVS, and the structure of the main electrode is optimized. The influence of the structure parameters and other structural parameters on the electric field distortion coefficient is mainly analyzed. The calculation results show that when the chamfering radius of the top end of MTVS is 5mm and the radius of the side edge chamfering radius of the rod is taken to take 3mm, it can be obtained. The coefficient of the distortion of the electric field is reduced to a minimum of 3.
The polarity effect of MTVS is simulated and the trigger characteristics are studied under different polarity conditions. The study shows that the special structure of MTVS determines that the diffusion process of the initial plasma is very different under the positive and negative polarity configuration. Therefore, MTVS has strong polarity effect when it works under the positive polarity configuration. The trigger reliability is high, the trigger delay and the dispersion are small. However, the trigger is very difficult in the negative configuration and the trigger failure rate is high. This paper proposes a double MTVS reverse parallel connection method to solve the trigger reliability problem in the communication mode successfully.
Finally, the flow and life characteristics of the MTVS samples before and after the optimization are experimentally studied. The experimental results show that (1) the lifetime of MTVS is more than 1000 times under the condition that the peak of current is 100kA and the pulse width is 600 u s single transfer charge, and the trigger voltage will reach a stable state after 100 times of flow, and the limit peak of MTVS. The value current is 250kA and the maximum di/dt is 9.1kA/ Mu s, and (2) the lifetime of the 30kA pulse width of 10ms single Coulomb transfer is 120C more than 1000 times, and the trigger delay is relatively stable at about 5 mu and the trigger voltage is relatively stable in the 40-1000V range after 200 times of flow, and the peak current is 65kA and pulse width. Under the action of pulse current of 22ms single transfer Coulomb of 402C, the life span of MTVS is greater than 30 times and the trigger delay is within the range of 1-9 s. (3) the voltage resistance characteristic of MTVS after the electrode structure optimization is obviously improved, the minimum average DC breakdown voltage is increased by 62.8%, and the electrode material is the minimum average direct current breakdown of the copper chromium alloy of the MTVS alloy. The voltage is 20% higher than that of the oxygen free copper MTVS, and the trigger delay and dispersion are small, and the trigger voltage is relatively high.

【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2014
【分類(lèi)號(hào)】：TM564

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 錢(qián)照明;盛況;;大功率半導(dǎo)體器件的發(fā)展與展望[J];大功率變流技術(shù);2010年01期

2 何俊佳,鄒積巖,王海,張漢明;高性能大功率觸發(fā)真空開(kāi)關(guān)的研究[J];電工電能新技術(shù);1997年02期

3 李化;龍兆芝;林福昌;胡曉斌;何正浩;李文婷;王蕾;;多棒極型觸發(fā)真空開(kāi)關(guān)觸發(fā)特性[J];電工技術(shù)學(xué)報(bào);2009年11期

4 魏榮華,吳漢荃,史長(zhǎng)龍,劉義崇;觸發(fā)真空開(kāi)關(guān)[J];高壓電器;1983年06期

5 程禮椿;橫磁觸頭真空滅弧室內(nèi)的電弧運(yùn)動(dòng)與液滴噴濺[J];高壓電器;1994年04期

6 武建文,王毅,王季梅,王爾智;用于觀測(cè)真空電弧形態(tài)的高速圖像微機(jī)采集系統(tǒng)的研究[J];高壓電器;1995年03期

7 何俊佳,鄒積巖,王海,程禮椿;觸發(fā)真空開(kāi)關(guān)中初始等離子體的產(chǎn)生和擴(kuò)展[J];高壓電器;1996年06期

8 姚士彬;電壓和電流老煉對(duì)真空滅弧室質(zhì)量的影響[J];高壓電器;2000年06期

9 史宗謙,賈申利,王立軍,王政;真空電弧電壓與電弧形態(tài)關(guān)系的實(shí)驗(yàn)研究[J];高壓電器;2004年04期

10 周正陽(yáng);廖敏夫;翟云飛;;場(chǎng)擊穿型真空觸發(fā)開(kāi)關(guān)的觸發(fā)源性能研究[J];高壓電器;2011年02期

相關(guān)博士學(xué)位論文 前2條

1 董華軍;真空開(kāi)關(guān)電弧形態(tài)研究及其等離子體參數(shù)診斷[D];大連理工大學(xué);2009年

2 周正陽(yáng);場(chǎng)擊穿型真空觸發(fā)開(kāi)關(guān)的相關(guān)理論與實(shí)驗(yàn)研究[D];大連理工大學(xué);2010年

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本文編號(hào)：1820202