本文選題：飛秒激光 + 黑硅�。� 參考：《上海理工大學(xué)》2014年碩士論文

【摘要】：太陽能是一種取之不盡、用之不竭的綠色能源,使用太陽電池進(jìn)行發(fā)電是利用太陽能的最有效途徑。然而,傳統(tǒng)硅基太陽電池的光電轉(zhuǎn)換效率僅為18%左右,其效率低的主要原因是硅材料為間接帶隙半導(dǎo)體,載流子躍遷至導(dǎo)帶需要的光子動(dòng)能遠(yuǎn)高于砷化鎵等直接帶隙半導(dǎo)體,形成很大的能量浪費(fèi)。但是,硅材料的價(jià)格優(yōu)勢(shì)使硅基太陽電池依舊占據(jù)市場(chǎng)總量的90%以上,所以,進(jìn)一步提升硅基太陽電池轉(zhuǎn)換效率對(duì)推動(dòng)光伏產(chǎn)業(yè)的發(fā)展具有極其重要的研究意義。制約硅基太陽電池效率提高的阻礙主要有兩條:1,未經(jīng)特殊處理的硅表面具有較高的反射率,被反射的陽光無法轉(zhuǎn)換為電能,形成能量損失;2,硅材料禁帶寬度較窄,無法吸收并轉(zhuǎn)換紅外光子。本論文主要針對(duì)問題1進(jìn)行了研究工作。1998年,具有特殊陷光性能的“黑硅”材料被發(fā)現(xiàn),其對(duì)可見光與紅外光的吸收率均超過90%,正好彌補(bǔ)了傳統(tǒng)硅材料在陷光方面的不足,在太陽電池領(lǐng)域被認(rèn)為極具發(fā)展前景。然而黑硅材料表面包覆著缺陷態(tài)密度極高的激光刻蝕損傷層,極大影響了黑硅太陽電池的轉(zhuǎn)換效率。為了進(jìn)一步提高黑硅太陽電池的轉(zhuǎn)換效率,本論文主要在兩方面進(jìn)行了研究工作:其一,對(duì)去除黑硅材料表面激光刻蝕損傷的方法進(jìn)行了系統(tǒng)研究;其二,設(shè)計(jì)了一套適合黑硅太陽電池的制備參數(shù)。在對(duì)去除黑硅材料激光刻蝕損傷的研究中,本文分析了三種不同的表面損傷去除方法(分別為:表面耦合等離子體刻蝕、各向同性腐蝕法、各向異性腐蝕法)對(duì)黑硅太陽電池效率的影響,結(jié)果表明,各向異性腐蝕法具有最優(yōu)的去損傷效果;之后,本文對(duì)各向異性腐蝕法的腐蝕時(shí)間結(jié)合少子壽命測(cè)試進(jìn)行了細(xì)致優(yōu)化,得到了一種奇特的正逆金字塔混合陷光結(jié)構(gòu)。該結(jié)構(gòu)相對(duì)傳統(tǒng)堿制絨表面具有更低的反射率,同時(shí)激光刻蝕損傷也得到了最大程度的去除;為了找到合適的黑硅電池制備參數(shù),本文對(duì)與黑硅電池制備相關(guān)的工藝參數(shù)逐一進(jìn)行了優(yōu)化,包括:激光刻蝕功率的優(yōu)化、表面鈍化層的選擇以及加入鋁背場(chǎng)技術(shù);最后,本文利用優(yōu)化后的工藝參數(shù)進(jìn)行了黑硅電池的實(shí)際制備,并對(duì)制得電池的陷光特性、亮場(chǎng)I-V特性、量子效率特性進(jìn)行了測(cè)試與分析。結(jié)果表明:在經(jīng)過表面去損傷處理后,黑硅太陽電池的開路電壓與短波內(nèi)量子效率得到了很大提升;正逆金字塔陷光結(jié)構(gòu)的引入使得黑硅太陽電池的短路電流密度明顯高于傳統(tǒng)堿制絨電池;最終,本文制備黑硅太陽電池的轉(zhuǎn)換效率從之前最優(yōu)的14.2%提升至15.6%,同時(shí),本文制備黑硅太陽電池的轉(zhuǎn)換效率也高于同時(shí)制備的堿制絨參考電池(轉(zhuǎn)換效率為15.3%)。
[Abstract]:Solar energy is an inexhaustible green energy, the use of solar cells to generate electricity is the most effective way to use solar energy.However, the photoelectric conversion efficiency of traditional silicon based solar cells is only about 18%. The main reason for the low efficiency is that the silicon material is an indirect bandgap semiconductor, and the photon kinetic energy required for carrier transition to the conduction band is much higher than that for direct band gap semiconductor such as gallium arsenide.Form a great waste of energy.However, because of the price advantage of silicon materials, silicon based solar cells still account for more than 90% of the total market. Therefore, it is of great significance to further improve the conversion efficiency of silicon based solar cells to promote the development of photovoltaic industry.The main obstacles to improving the efficiency of silicon based solar cells are two: 1. The surface of silicon without special treatment has high reflectivity, the reflected sunlight can not be converted into electric energy, the energy loss is 2%, and the band gap of silicon material is relatively narrow.Unable to absorb and convert infrared photons.In 1998, the black silicon with special trapping properties was found, and the absorption rates of both visible and infrared light were over 90, which made up for the deficiency of traditional silicon materials in trapping light.In the field of solar cells is considered to have great prospects for development.However, the black silicon material is coated with a highly dense defect laser etching layer, which greatly affects the conversion efficiency of the black silicon solar cells.In order to further improve the conversion efficiency of black silicon solar cells, this paper mainly researches in two aspects: first, the method of removing laser etching damage on the surface of black silicon is studied systematically; second,A set of fabrication parameters suitable for black silicon solar cells was designed.In the study of laser etching damage removal of black silicon materials, three different surface damage removal methods (surface coupled plasma etching, isotropic etching) are analyzed in this paper.The effect of anisotropic etching on the efficiency of black silicon solar cells is studied. The results show that the anisotropic etching method has the best effect of removing damage.In this paper, the corrosion time of anisotropic etching method combined with minority carrier lifetime testing is carefully optimized, and a peculiar mixed trapping light structure with forward and inverse pyramids is obtained.The structure has lower reflectivity than the traditional alkali made surface, and the laser etching damage is removed to the greatest extent. In order to find the appropriate preparation parameters of black silicon battery,In this paper, the process parameters related to the preparation of black silicon battery are optimized one by one, including the optimization of laser etching power, the selection of surface passivation layer and the addition of aluminum backfield technology.In this paper, the practical preparation of black silicon battery is carried out by using the optimized process parameters, and the trapping light characteristics, bright field I-V characteristics and quantum efficiency characteristics of the prepared battery are tested and analyzed.The results show that the open-circuit voltage and short-wave quantum efficiency of the black silicon solar cell are greatly improved after the surface damage treatment.The short circuit current density of the black silicon solar cell is significantly higher than that of the traditional alkaline chorion cell due to the introduction of the positive and inverse pyramid trapping light structure. Finally, the conversion efficiency of the black silicon solar cell prepared in this paper has been raised from the previous optimum of 14.2% to 15.6g, at the same time,In this paper, the conversion efficiency of black silicon solar cells is also higher than that of alkali reference cells.
【學(xué)位授予單位】：上海理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM914.41
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本文編號(hào)：1768506