基于COB封裝結(jié)構(gòu)功率LED熱仿真研究
本文選題:封裝結(jié)構(gòu) + 功率LED ; 參考:《哈爾濱理工大學》2014年碩士論文
【摘要】:隨著科學技術(shù)的不斷發(fā)展進步,人類在照明領(lǐng)域的發(fā)展空前繁榮。從上世紀末開始,隨著半導體技術(shù)日益成熟,LED照明在節(jié)能環(huán)保、提高照明質(zhì)量和效率方面表現(xiàn)出了巨大優(yōu)勢,,其應(yīng)用也越來越廣泛。LED器件的封裝作為半導體照明產(chǎn)業(yè)鏈的中游環(huán)節(jié),封裝的功能在于提供芯片足夠的保護,防止芯片在空氣中長期暴露或機械損傷而失效,以提高芯片的穩(wěn)定性。好的封裝可以讓LED具備更好的發(fā)光效率和散熱環(huán)境,進而提升LED的壽命。本文通過Pro/E和有限元分析軟件ANSYS的聯(lián)合模擬仿真,對市場上比較普遍而且封裝技術(shù)比較成熟功率LED的SMD和COB兩種封裝結(jié)構(gòu)進行了熱仿真與熱分析。主要完成的工作如下: 首先,本文是從功率型LED的熱特性入手,對軸對稱功率型LED封裝結(jié)構(gòu)做了深入的調(diào)研工作,詳細論述了本課題的研究目的與意義以及未來的發(fā)展趨勢。對熱傳遞、熱傳導以及熱學模型進行了理論闡述。針對功率型LED高度集成密封在不影響封裝結(jié)構(gòu)前提下提出采用大電流測試結(jié)溫方法,為獲得準確的實驗數(shù)據(jù)提供支持。 其次,伴隨功率型LED的新型封裝技術(shù)不斷發(fā)展,介紹了SMD和COB兩種封裝結(jié)構(gòu)。本文分別通過選用SMD封裝和COB封裝兩種常見結(jié)構(gòu)的功率型LED樣品作為實例。運用大電流測試結(jié)溫的方法對LED樣品的兩種結(jié)封裝結(jié)構(gòu)進行試驗數(shù)據(jù)采集分析,并與通過ANSYS軟件仿真模擬的結(jié)果進行對比,以驗證通過ANSYS軟件建立模型和分析的準確性。 最后,本文利用Pro/E和有限元分析軟件ANSYS的聯(lián)合對COB封裝結(jié)構(gòu)依據(jù)不同傳導路徑得三種不同的形式進行對比仿真分析,之后通過散熱器增長再進行量化分析。伴隨著功率型LED產(chǎn)品通過垂直方向上內(nèi)部熱沉數(shù)量的減少,其熱傳導所經(jīng)過的路徑也在減少,對于傳導路徑經(jīng)過的地方越少,則對應(yīng)散熱效果就越好;通過將COB-A與COB-B的散熱器分別增長原來各自散熱器的187.5%和32.5%才可以達到與COB-C接近的散熱效果,這樣我們通過改變傳導路徑來改變散熱效果,不但成本低廉,更加實用。
[Abstract]:With the development of science and technology, the development of mankind in the field of lighting unprecedented prosperity.Since the end of the last century, with the increasingly mature semiconductor technology, LED lighting has shown great advantages in energy saving, environmental protection, lighting quality and efficiency.The packaging of LED devices is becoming more and more widely used as the middle link of the semiconductor lighting industry chain. The function of the packaging is to provide adequate protection of the chip against long-term exposure to the air or mechanical damage and failure.To improve the stability of the chip.Good encapsulation allows LED to have better luminous efficiency and heat dissipation environment, thus increasing the lifetime of LED.Through the joint simulation of Pro/E and the finite element analysis software ANSYS, the thermal simulation and thermal analysis of two packaging structures, SMD and COB, which are more popular in the market and more mature in power LED, are carried out in this paper.The main tasks accomplished are as follows:Firstly, starting with the thermal characteristics of power type LED, this paper makes a deep investigation on the axisymmetric power type LED packaging structure, and discusses in detail the purpose, significance and future development trend of this topic.The heat transfer, heat conduction and thermal model are discussed theoretically.In view of the high integrated seal of power type LED without affecting the package structure, a method of high current measurement of junction temperature is proposed, which provides support for obtaining accurate experimental data.Secondly, with the development of new packaging technology of power LED, two kinds of packaging structures, SMD and COB, are introduced.In this paper, the power type LED samples with two common structures, SMD package and COB package, are selected as examples.Two kinds of junction packaging structures of LED samples were collected and analyzed by using the method of high current test junction temperature, and the results were compared with the results of simulation by ANSYS software to verify the accuracy of modeling and analysis by ANSYS software.Finally, the paper uses the combination of Pro/E and the finite element analysis software ANSYS to compare and simulate the COB packaging structure according to different conduction paths, and then carries on the quantitative analysis through the radiator growth.With the decrease of the quantity of heat sink in the vertical direction, the heat conduction path of the power type LED product is also decreasing. The less the place of the conduction path, the better the heat dissipation effect.By increasing the radiators of COB-A and COB-B by 187.5% and 32.5% of the original radiators respectively, the heat dissipation effect close to that of COB-C can be achieved. In this way, we can change the heat dissipation effect by changing the conduction path, which is not only low cost, but also more practical.
【學位授予單位】:哈爾濱理工大學
【學位級別】:碩士
【學位授予年份】:2014
【分類號】:TM923.34
【參考文獻】
相關(guān)期刊論文 前10條
1 羅元;魏體偉;王興龍;;基于倒裝焊芯片的功率型LED熱特性分析[J];半導體光電;2012年03期
2 蘇達;王德苗;;大功率LED封裝散熱技術(shù)研究[J];半導體技術(shù);2007年09期
3 田大壘;關(guān)榮鋒;王杏;;大功率LED封裝有限元熱分析[J];半導體技術(shù);2008年03期
4 蘇達;王德苗;;大功率LED散熱封裝技術(shù)研究的新進展[J];電力電子技術(shù);2007年10期
5 張繼;劉明峰;郭良權(quán);王成;;基于COB組裝工藝的芯片失效分析[J];電子與封裝;2006年10期
6 姜斌;宋國華;繆建文;袁莉;紀憲明;;基于板上封裝技術(shù)的大功率LED熱分析[J];電子元件與材料;2011年06期
7 王幼林;趙英;;半導體照明技術(shù)標準化現(xiàn)狀[J];信息技術(shù)與標準化;2006年03期
8 趙剛,孫青林,趙英;板上芯片(COB)技術(shù)的特點及應(yīng)用[J];電子展望與決策;1995年01期
9 高興軍,趙恒華;大型通用有限元分析軟件ANSYS簡介[J];遼寧石油化工大學學報;2004年03期
10 李鵬;;發(fā)光二極管(LED)燈具的熱分析與散熱設(shè)計[J];光源與照明;2008年04期
相關(guān)碩士學位論文 前5條
1 胡東飛;功率型LED封裝技術(shù)及熱設(shè)計[D];杭州電子科技大學;2011年
2 蘇亞;基于ANSYS的結(jié)構(gòu)有限元分析[D];中國科學院研究生院(空間科學與應(yīng)用研究中心);2007年
3 季雙;微電子芯片的熱仿真分析[D];北京交通大學;2009年
4 郭培;大功率LED封裝用散熱鋁基板的制備與性能研究[D];重慶大學;2009年
5 溫懷疆;LED結(jié)溫測試方法研究[D];浙江大學;2010年
本文編號:1732420
本文鏈接:http://sikaile.net/kejilunwen/dianlilw/1732420.html