本文選題：抗輻照玻璃　切入點(diǎn)：電子輻照　出處：《光譜學(xué)與光譜分析》2014年04期

【摘要】：研究了1.7 MeV的電子輻照對(duì)具有Anti-radiation glass/ITO/ZnO/CdS/CdTe/ZnTe/ZnTe:Cu/Ni結(jié)構(gòu)的碲化鎘多晶薄膜太陽(yáng)電池器件性能的影響。抗輻照玻璃的使用,有效防止了普通玻璃受輻照后性能變化對(duì)測(cè)試結(jié)果的影響。利用光、暗I-V,C-V,QE,AS等測(cè)試手段,分析了包括開路電壓、短路電流、轉(zhuǎn)換效率在內(nèi)的電池性能。通過對(duì)比研究暗電流密度、分析了輻照對(duì)電池電流傳輸特性的影響。輻照后短路電流下降很大,電池效率明顯降低。反向飽和電流密度有所增加,表明太陽(yáng)電池的pn結(jié)特性受到損傷,而二極管理想因子幾乎不變,說明太陽(yáng)電池電流的輸運(yùn)機(jī)制未發(fā)生了變化。量子效率曲線證明是由于太陽(yáng)電池結(jié)區(qū)損傷影響了光生載流子的收集。輻照使載流子濃度下降為原來的40.6%。導(dǎo)納譜研究最終發(fā)生輻照會(huì)引入Cd~(2+)缺陷能級(jí),其位置為E_1—E_v=(0.58±0.02)eV,俘獲截面為1.78×10~(-16)cm~2,表明輻照會(huì)影響光生載流子的產(chǎn)生,增加了載流子復(fù)合的概率,使得反向暗電流增大,最終導(dǎo)致電池的短路電流衰減。
[Abstract]:The effects of 1. 7 MeV electron irradiation on the performance of cadmium telluride polycrystalline thin film solar cell with Anti-radiation glass/ITO/ZnO/CdS/CdTe/ZnTe/ZnTe:Cu/Ni structure were investigated.The use of irradiation-resistant glass effectively prevents the influence of the change of properties of common glass after irradiation on the test results.The performance of the battery including open circuit voltage, short circuit current and conversion efficiency is analyzed by means of light, dark I-VN C-VN QEas and so on.By comparing the dark current density, the effects of irradiation on the current transmission characteristics of the cell are analyzed.After irradiation, the short circuit current decreased greatly, and the efficiency of the battery decreased obviously.The increase of reverse saturation current density indicates that the pn junction characteristics of solar cells are damaged, while the diode ideal factor is almost unchanged, which indicates that the current transport mechanism of solar cells has not changed.The quantum efficiency curve shows that the damage in the junction region of solar cells affects the collection of photogenerated carriers.The carrier concentration was reduced to 40.6 by irradiation.瀵肩撼璋辯爺絀舵渶緇堝彂鐢熻緪鐓т細(xì)寮曞叆Cd~(2 )緙洪櫡鑳界駭,鍏朵綅緗負(fù)E_1鈥擡_v=(0.58鹵0.02)eV,淇樿幏鎴潰涓，

本文編號(hào)：1707311