本文選題：BNT基　切入點(diǎn)：無鉛壓電陶瓷　出處：《聊城大學(xué)》2014年碩士論文

【摘要】：Bi0.5Na0.5TiO3（BNT）基無鉛壓電陶瓷因優(yōu)異的鐵電性能和較高的居里溫度而成為無鉛壓電材料領(lǐng)域的研究熱點(diǎn)。為了進(jìn)一步改善BNT基無鉛壓電陶瓷的性能，本文從離子摻雜、多組元改性和添加燒結(jié)助劑這三個(gè)方面對(duì)BNT基無鉛壓電陶瓷進(jìn)行了改性研究。本課題采用的制備方法為傳統(tǒng)固相合成法，研究的主要內(nèi)容及結(jié)論如下： 1.研究了Sm3+、Co3+和Bi3+、Cr3+兩對(duì)離子復(fù)合摻雜以及Al3+B位摻雜對(duì)BNT基陶瓷微觀結(jié)構(gòu)和電學(xué)性能的影響。研究表明：所有實(shí)驗(yàn)樣品均具有純的鈣鈦礦結(jié)構(gòu)；Sm3+、Co3+復(fù)合摻雜能夠明顯促進(jìn)0.94Bi0.5Na0.5TiO3-0.06BaTiO3（BNBT6）陶瓷晶粒的生長，提高陶瓷壓電常數(shù)d33、機(jī)電耦合系數(shù)kp的同時(shí),提高陶瓷的機(jī)械品質(zhì)因數(shù)Qm，摻雜量為0.4mol%的陶瓷樣品綜合性能最佳：d33=144pC/N, kp=29.1%, Qm=219。Bi3+、Cr3+的復(fù)合摻雜使0.93Bi0.5Na0.5TiO3-0.07BaTiO3（BNBT7）晶格發(fā)生畸變，晶胞參數(shù)c/a隨摻雜量的增大呈增大的趨勢；Bi3+、Cr3+的復(fù)合摻雜能夠明顯改善陶瓷的電性能，當(dāng)摻雜量為0.6mol%時(shí)，陶瓷樣品的綜合性能最佳：剩余極化強(qiáng)度Pr高達(dá)41.7μC/cm2，矯頑場強(qiáng)度Ec降至17.6kV/cm，d33高達(dá)205pC/N，kp為19.3%。Al3+的摻入使Bi0.5Na0.36K0.09Li0.05TiO3（BNKLT）陶瓷的壓電常數(shù)d33和機(jī)電耦合系數(shù)kp略有降低，適量的Al3+摻雜可以提高陶瓷的機(jī)械品質(zhì)因數(shù)Qm。 2.引入(Ba0.90Ca0.10)(Ti0.92Sn0.08)O3和LiSbO3組元，制備了(1-x)Bi0.5Na0.5TiO3-x(Ba0.90Ca0.10)(Ti0.92Sn0.08)O3[(1-x)BNT-xBCST]和(0.94-x)Bi0.5Na0.5TiO3-0.06BaTiO3-xLiSbO3[(0.94-x)BNT-0.06BT-xLS]陶瓷體系，研究表明：(1-x)BNT-xBCST陶瓷體系在所研究的范圍內(nèi)（x=0.0~0.14）均具有純的鈣鈦礦結(jié)構(gòu)，當(dāng)0.07≤x≤0.14時(shí)，存在三方相和四方相共存。Ba0.90Ca0.10Ti0.92Sn0.08O3組元的引入使陶瓷的鐵電性能和壓電性能得到了明顯的改善，當(dāng)x=0.08時(shí)，陶瓷的壓電常數(shù)d33高達(dá)219pC/N,機(jī)電耦合系數(shù)kp為20%，矯頑場強(qiáng)度Ec為21.3kV/cm。適量LiSbO3組元的引入明顯的促進(jìn)了(0.94-x)BNT-0.06BT-xLS陶瓷晶粒的生長，適量LiSbO3組元加入能夠改善陶瓷的壓電性能，當(dāng)x=0.015時(shí)，壓電常數(shù)d33=149pC/N，機(jī)電耦合系數(shù)kp=0.23，機(jī)械品質(zhì)因數(shù)Qm=143。 3.制備了（1-x）BNT-xSrFeCo0.5Oy壓電陶瓷，SrFeCo0.5Oy作為燒結(jié)助劑能夠明顯促進(jìn)BNT陶瓷晶粒的生長，降低陶瓷的燒結(jié)溫度，，能夠?qū)NT陶瓷的燒結(jié)溫度降至1050oC。另外，SrFeCo0.5Oy能夠改善BNT壓電陶瓷的鐵電、壓電性能，具有復(fù)合摻雜改性的作用，當(dāng)x=0.06時(shí)，陶瓷樣品的綜合性能最佳：d33=92pC/N，kp=0.15，Qm=383。
[Abstract]:Bi0.5Na0.5TiO3BNT-based lead-free piezoelectric ceramics have become a hotspot in the field of lead-free piezoelectric materials due to their excellent ferroelectric properties and high Curie temperature.In order to further improve the properties of BNT based lead-free piezoelectric ceramics, the modification of BNT based lead-free piezoelectric ceramics was studied from the aspects of ion doping, multicomponent modification and sintering additives.The main contents and conclusions of this study are as follows:1.The effects of Sm3 Co _ 3 and Bi3 _ Cr _ 3 ion compound doping and Al3 B site doping on the microstructure and electrical properties of BNT based ceramics were investigated.The results show that all the samples have pure perovskite structure and Sm ~ 3 / Co _ 3 complex doping can obviously promote the growth of 0.94Bi0.5Na0.5TiO3-0.06BaTiO3-0.06BaTiO3BNBT6) ceramics, increase the piezoelectric constant d33and the electromechanical coupling coefficient (kp).By improving the mechanical quality factor (Qm) of the ceramics, the ceramic samples doped with 0.4 mol% have the best comprehensive properties: D33144pC / N, KpT29.1 and the composite doping of Qm=219.Bi3 / Cr3 distorts the lattice of 0.93Bi0.5Na0.5TiO3-0.07BaTiO3BNBT7.The crystal cell parameter c / a increases with the increase of doping amount. The composite doping of Bi _ 3O _ (3) Cr _ (3) can obviously improve the electrical properties of the ceramics. When the doping amount is 0.6 mol%,闄剁摲鏍峰搧鐨勭患鍚堟

本文編號(hào)：1704710