本文選題：襯底溫度　切入點：濺射氣壓　出處：《稀有金屬材料與工程》2014年09期

【摘要】：研究了襯底溫度、濺射氣壓對磁控濺射沉積ZnO緩沖層薄膜的微觀結(jié)構(gòu)、表面形貌和光學(xué)性能的影響。結(jié)果表明,襯底溫度、濺射氣壓對ZnO緩沖層薄膜表面形貌、晶粒尺寸、禁帶寬度和光學(xué)透過率等有較大影響。綜合分析得出最佳的制備ZnO緩沖層薄膜的工藝為250℃、0.6 Pa。在此工藝下制備的ZnO緩沖層薄膜具有很好的ZnO(002)面c軸擇優(yōu)取向,結(jié)構(gòu)致密、尺寸均勻,禁帶寬度為3.24 eV,可見光平均透過率為86.93%,符合作CIGS太陽能電池緩沖層的要求。
[Abstract]:The effects of substrate temperature and sputtering pressure on the microstructure, surface morphology and optical properties of ZnO buffer film deposited by magnetron sputtering were studied. The results show that the substrate temperature and sputtering pressure affect the surface morphology and grain size of ZnO buffer film. The synthetic analysis shows that the best process for preparing ZnO buffer film is 250 鈩，

本文編號：1689770