本文選題：太陽電池　切入點：輻照強(qiáng)度　出處：《電源技術(shù)》2015年12期 　論文類型：期刊論文

【摘要】：為了研究單晶硅和非晶硅三結(jié)疊層光伏組件在不同輻照強(qiáng)度下所表現(xiàn)出來的不同光電特性,采用對比測試和理論模擬的方法,分析輻照強(qiáng)度對這兩種太陽電池光電特性的影響:對非晶和單晶硅組件而言,輻照強(qiáng)度引起組件的電流呈線性變化,電壓變化較小,通過對比分析電流和電壓的斜率,可以得到電流更容易受輻照強(qiáng)度變化的影響;隨輻照強(qiáng)度的增強(qiáng),單晶硅組件的填充因子和效率是先增大后減小,三結(jié)疊層非晶硅組件的填充因子先增大后減小,然而效率是持續(xù)增大的。
[Abstract]:In order to study the different optoelectronic properties of monocrystalline silicon and amorphous silicon trijunction photovoltaic modules under different irradiation intensities, a method of comparative testing and theoretical simulation was used. The effect of irradiation intensity on the photoelectric characteristics of the two solar cells is analyzed. For amorphous and monocrystalline silicon modules, the current of the solar cell is linearly changed and the voltage changes are small. The slope of the current and voltage is analyzed by comparing and analyzing the slope of the current and voltage. With the increase of irradiation intensity, the filling factor and efficiency of monocrystalline silicon assembly increase first and then decrease, and the filling factor of triplex amorphous silicon assembly increases first and then decreases. Efficiency, however, continues to increase.
【作者單位】： 中國人民解放軍63981部隊;北京理工大學(xué)材料學(xué)院;云南桑帕爾光伏科技有限公司;云南師范大學(xué)太陽能研究所教育部可再生能源材料先進(jìn)技術(shù)與制備重點實驗室;
【分類號】：TM914.4

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

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本文編號：1649285