本文選題：混沌SPWM　切入點(diǎn)：IGBT　出處：《北京交通大學(xué)》2014年碩士論文　論文類型：學(xué)位論文

【摘要】：摘要：混沌SPWM被提出并逐漸應(yīng)用于抑制功率變換器中的電磁干擾,這種控制方法能有效降低EMI峰值,且實(shí)現(xiàn)簡(jiǎn)單,目前受到了人們?cè)絹?lái)越廣泛的關(guān)注。但是目前這種控制方法下開(kāi)關(guān)器件的功率損耗和溫升問(wèn)題還未被關(guān)注和分析。而隨著電力電子技術(shù)的飛速發(fā)展,半導(dǎo)體開(kāi)關(guān)器件功率等級(jí)的不斷提升,器件工作時(shí)的結(jié)溫也不斷升高。結(jié)溫過(guò)高會(huì)影響開(kāi)關(guān)器件的工作性能和使用壽命,溫升問(wèn)題已經(jīng)成為了功率開(kāi)關(guān)器件產(chǎn)生故障的主要原因。因此分析混沌控制下功率變換器中開(kāi)關(guān)器件的損耗和溫升對(duì)于混沌正弦脈寬調(diào)制這種方法的優(yōu)化和推廣有著很重要的意義。 本文首先介紹了基于混沌SPWM控制AC-DC變換器的工作原理及控制策略,分析了Logistic和Tent兩種常用混沌映射的特性,并基于控制原理比較了混沌SPWM控制與常規(guī)SPWM控制,最后選用TMS320F28335為變換器控制核心芯片,在CCS3.3平臺(tái)下編寫(xiě)了混沌SPWM的控制程序。 同時(shí),本文針對(duì)已有的變頻混沌SPWM控制中載波頻率混沌波動(dòng)的特點(diǎn)和變幅值混沌SPWM控制中載波幅值混沌波動(dòng)的特點(diǎn),利用離散迭代的方式,首次分別提出了兩種混沌SPWM控制下AC-DC變換器中IGBT的損耗計(jì)算方法,從理論和計(jì)算上對(duì)常規(guī)SPWM控制和混沌SPWM控制下的IGBT損耗進(jìn)行了對(duì)比分析。 為了分析本文提出的損耗計(jì)算方法的精確性,本文選用ANSYS進(jìn)行熱仿真分析,利用Solidworks建立3D模型并導(dǎo)入ANSYS,提高了仿真的精確性。同時(shí)為了準(zhǔn)確的分析不同控制方法下IGBT溫升的對(duì)比,本文選用Saber-Simulink聯(lián)合電熱仿真,在Simulink中搭建混沌SPWM控制和常規(guī)SPWM控制模塊,在Saber中搭建熱模塊并進(jìn)行了不同控制下IGBT的溫升仿真對(duì)比。 最后搭建了單相AC-DC變換器實(shí)驗(yàn)平臺(tái),并設(shè)計(jì)了單片機(jī)測(cè)溫顯示系統(tǒng),測(cè)量了不同控制方法下IGBT的溫升并繪制曲線。溫升實(shí)驗(yàn)配合熱仿真驗(yàn)證了前文提出的損耗計(jì)算方法的精確性,并驗(yàn)證了混沌SPWM與常規(guī)SPWM控制下IGBT損耗差異對(duì)比及仿真研究的正確性。
[Abstract]:Absrtact: chaotic SPWM is proposed and gradually applied to suppress electromagnetic interference in power converter. This control method can effectively reduce the peak value of EMI and is easy to implement. At present, more and more attention has been paid to the power loss and temperature rise of switching devices under this control method. However, with the rapid development of power electronics technology, the power loss and temperature rise of switching devices have not been paid attention to and analyzed. With the increasing of the power level of semiconductor switch devices, the junction temperature of the devices is also rising. The high junction temperature will affect the working performance and service life of the switch devices. The problem of temperature rise has become the main cause of failure of power switch devices. Therefore, the optimization and extension of the method of switching device loss and temperature rise for chaotic sinusoidal pulse width modulation under chaos control are analyzed. Have very important meaning. This paper first introduces the working principle and control strategy of AC-DC converter based on chaotic SPWM, analyzes the characteristics of two common chaotic maps, Logistic and Tent, and compares the chaotic SPWM control with the conventional SPWM control based on the control principle. Finally, TMS320F28335 is chosen as the core chip of converter control, and the control program of chaotic SPWM is written on CCS3.3 platform. At the same time, according to the characteristics of the carrier frequency chaos fluctuation in the frequency conversion chaotic SPWM control and the carrier amplitude chaos fluctuation in the variable amplitude chaotic SPWM control, the discrete iteration method is used in this paper. For the first time, two methods for calculating the loss of IGBT in AC-DC converters under chaotic SPWM control are proposed for the first time, and the IGBT losses under conventional SPWM control and chaotic SPWM control are compared and analyzed theoretically and numerically. In order to analyze the accuracy of the loss calculation method proposed in this paper, ANSYS is selected for thermal simulation analysis. Using Solidworks to build 3D model and import ANSYSto improve the accuracy of simulation. In order to accurately analyze the comparison of IGBT temperature rise under different control methods, this paper chooses Saber-Simulink combined with electrothermal simulation to build chaotic SPWM control module and conventional SPWM control module in Simulink. The thermal module is built in Saber and the temperature rise of IGBT under different control is compared. Finally, a single-phase AC-DC converter experimental platform is built, and a single-chip microcomputer temperature measurement and display system is designed. The temperature rise of IGBT under different control methods was measured and the curves were drawn. The accuracy of the loss calculation method proposed in the previous paper was verified by the temperature rise experiment and thermal simulation. The comparison between chaotic SPWM and IGBT loss under conventional SPWM control and the correctness of simulation are verified.
【學(xué)位授予單位】：北京交通大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM46

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