本文選題：低溫燒結(jié)　切入點：壓電陶瓷　出處：《天津大學》2014年碩士論文　論文類型：學位論文

【摘要】：近年來,多層壓電器件已廣泛研究用于器件的整機一體化、小型化、復(fù)合化和高性能。為了用更便宜的金屬電極如純Ag或高Ag/低Pd實現(xiàn)多層壓電陶瓷的共燒,降低燒結(jié)溫度是必要的。因此,低溫燒結(jié)壓電陶瓷對制備廉價的多層壓電器件十分重要。本文通過非化學計量、添加CuO為燒結(jié)助劑、增加組元的方法來降低壓電陶瓷的燒結(jié)溫度,研究其對PZT-PNN-PZN四元系壓電陶瓷材料的燒結(jié)溫度、微觀形貌、燒結(jié)密度、介電和壓電性能的影響。首先,采用一次合成法制備了PZT-PNN-PZN四元系壓電陶瓷,在PZT-PNN-PZN四元系壓電陶瓷中添加Pb_3O_4、NiO、ZnO,改變組分的非化學計量,研究了不同的Pb_3O_4、NiO、ZnO含量對于PZT-PNN-PZN四元系壓電陶瓷的燒結(jié)特性和電性能的影響。實驗結(jié)果表明:Pb_3O_4、NiO、ZnO的加入沒有改變基體材料的晶體結(jié)構(gòu),同時在燒結(jié)過程中形成了液相,促進燒結(jié)致密化并降低了燒結(jié)溫度。但Pb_3O_4、NiO、ZnO的加入惡化了樣品的性能。采用分步合成法,1mol%N iO過量的樣品在950°C下燒結(jié)4h后,其壓電常數(shù)d33、介電損耗tanδ、相對介電常數(shù)ε_33~T/ε0分別為:337pc/N,2.1%,2311。同時,還研究了在二次合成前后加入NiO對于樣品的燒結(jié)特性以及性能的影響,結(jié)果表明在合成后加入NiO樣品燒結(jié)后的致密度更大,性能也比較優(yōu)良。采用非化學計量能降低壓電陶瓷的燒結(jié)溫度,但嚴重惡化了壓電和介電性能。其次,為了使陶瓷具有較低的燒結(jié)溫度并同時具有優(yōu)良的壓電性能,采用最常見的燒結(jié)助劑CuO來實現(xiàn)。實驗結(jié)果表明,CuO的加入沒有改變基體的主晶相結(jié)構(gòu),同時能夠明顯提高材料的致密度。1mol%CuO摻雜的樣品在950°C下燒結(jié)4h的壓電常數(shù)d33、介電損耗tanδ、相對介電常數(shù)ε_33~T/ε0分別為:411pc/N,1.86%,2449,具有一定的應(yīng)用潛力。C uO的添加能有效降低陶瓷的燒結(jié)溫度,也能得到相對優(yōu)良的壓電和介電性能。最后,引入鈣鈦礦結(jié)構(gòu)組元PFW作為燒結(jié)助劑,采用分步合成法制備(a-x)Pb(Zr_(0.48)Ti_(0.52))O_3-bPb(i_(1/3)Nb_(2/3))O_3-c Pb(Zn_(1/3) Nb_(2/3))O_3-xPb(Fe_(2/3)W_(1/3))O_3(a+b+c+x=1,0.06≤x≤0.10)陶瓷,研究了PFW含量對致密度、微觀形貌、相結(jié)構(gòu)、介電和壓電性能,PFW的摻雜使材料的燒結(jié)溫度從1180°C降低到940°C,PFW的添加增加了PFW-PNN-PZN-PZT陶瓷的燒結(jié)致密度和平均晶粒尺寸,當x=0.08時陶瓷在940°C燒結(jié)4h具有優(yōu)良的性能:d33=496pC/N,ε_33~T/ε0=3119,tanδ=2.1%,and Tc=242°C。這些數(shù)值表明此新組成適用于多層壓電器件。
[Abstract]:In recent years, multilayer laminated electrical devices have been widely studied for the integration, miniaturization, compounding and high performance of the devices. In order to realize the co-firing of multilayer piezoelectric ceramics with cheaper metal electrodes such as pure Ag or high Ag/ low PD, It is necessary to reduce the sintering temperature. Therefore, low temperature sintering piezoelectric ceramics is very important for the preparation of cheap multilayer laminated electrical parts. In this paper, CuO is added as sintering assistant by non-stoichiometric method. To reduce the sintering temperature of piezoelectric ceramics by adding components, the effects of the sintering temperature, microstructure, sintering density, dielectric and piezoelectric properties of PZT-PNN-PZN quaternary piezoelectric ceramics were studied. PZT-PNN-PZN quaternary piezoelectric ceramics were prepared by a single synthesis method. PbS3 O4 / NiOZnO was added to PZT-PNN-PZN quaternionic piezoelectric ceramics to change the non-stoichiometry of the components. The effect of different content of Pb3O _ 4NiOO _ (ZnO) on the sintering properties and electrical properties of PZT-PNN-PZN quaternary piezoelectric ceramics was studied. The experimental results show that the addition of PZT-PNN-PZN _ (3) O _ (4) O _ (4) NiOO _ (PZT-PNN-PZN) does not change the crystal structure of the substrate, and a liquid phase is formed during the sintering process. The sintering densification was promoted and the sintering temperature was lowered. However, the addition of PB3O4NiOO ZnO deteriorated the properties of the samples. The piezoelectric constant d33, dielectric loss tan 未, relative dielectric constant 蔚 33T / 蔚 0 of the samples sintered at 950 擄C for 4 h by stepwise synthesis method were:% 337pcNr / 蔚 0 = W 337pcn-1 / 蔚 0, respectively. The effects of adding NiO before and after the secondary synthesis on the sintering properties and properties of the samples were also studied. The results showed that the density of the samples sintered with NiO was higher after the synthesis. The sintering temperature of piezoelectric ceramics can be reduced by using non-stoichiometric method, but the piezoelectric and dielectric properties are seriously deteriorated. Secondly, in order to make the ceramics have lower sintering temperature and excellent piezoelectric properties at the same time, The experimental results show that the addition of CuO does not change the main crystal structure of the matrix. At the same time, the density of the samples sintered at 950 擄C, the dielectric loss tan 未 and the relative dielectric constant 蔚 33 T / 蔚 0 are respectively 1. 411pc/ N86 / 2449, respectively. The addition of COO has a certain application potential. The addition of COO can effectively reduce the sintering temperature of the ceramics. Finally, PFW, a perovskite structure component, was introduced as sintering assistant, and a step by step synthesis method was used to prepare a new type of ceramic. The effect of PFW content on density, micromorphology and density was studied, and the effect of PFW content on density and micromorphology was studied, and the effect of PFW content on density and micromorphology was investigated, and the effect of PFW content on the density and micromorphology of the ceramics was studied. The results showed that the structure of the perovskite structure PFW was used as a sintering assistant, and the effect of PFW content on the density and micromorphology of the ceramics was studied, and the effect of the PFW content on the density and micromorphology of the ceramics was investigated, and the effect of the PFW content on the density and micromorphology of the ceramics was studied. The sintering temperature of PFW-PNN-PZN-PZT ceramics decreased from 1180 擄C to 940 擄C with the doping of phase structure, dielectric and piezoelectric properties. The sintering density and average grain size of PFW-PNN-PZN-PZT ceramics were increased. The ceramics sintered at 940 擄C for 4 h have excellent properties: D33496pC / N, 蔚 33T / 蔚 0119tan 未 2.1and Tc=242 擄C. these results indicate that the new composition is suitable for multilayer compaction.
【學位授予單位】：天津大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TM282

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1 馬建強;PZT-PNN-PZN四元系壓電陶瓷的低溫燒結(jié)與性能研究[D];天津大學;2014年

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本文編號：1576677