本文選題：鈦氧化物憶阻器　切入點(diǎn)：雜質(zhì)漂移　出處：《國防科學(xué)技術(shù)大學(xué)》2014年博士論文　論文類型：學(xué)位論文

【摘要】：鈦氧化物憶阻器是理論憶阻器的一種物理實(shí)現(xiàn),是當(dāng)前國內(nèi)外材料學(xué)、電路學(xué)及人工智能等科學(xué)領(lǐng)域廣泛研究的熱點(diǎn),該電路元件的出現(xiàn)將可能從根本上改變電子信息技術(shù)的物理基礎(chǔ)。然而,鈦氧化物憶阻器具有納米量級(jí)的尺寸及復(fù)雜的電路學(xué)特性,其導(dǎo)電過程受不同材料、參數(shù)及機(jī)理的作用與影響,雖經(jīng)多方研究,目前尚未形成定論,由此產(chǎn)生的鈦氧化物憶阻器阻抗?fàn)顟B(tài)控制與應(yīng)用是亟待解決的關(guān)鍵問題。本文主要圍繞鈦氧化物憶阻器導(dǎo)電機(jī)理及阻抗?fàn)顟B(tài)控制方法進(jìn)行了深入研究。本文主要研究?jī)?nèi)容包括:(1)深入調(diào)研了鈦氧化物憶阻器領(lǐng)域的發(fā)展現(xiàn)狀,分析了國內(nèi)外關(guān)于器件制備,導(dǎo)電機(jī)理,建模仿真及應(yīng)用的研究現(xiàn)狀,歸納總結(jié)了當(dāng)前研究中尚存的不足。(2)提出了在鈦氧化物憶阻器中雜質(zhì)漂移與隧道勢(shì)壘共存的導(dǎo)電機(jī)理,并基于此提出了一種共存模型,通過模型仿真對(duì)雜質(zhì)漂移與隧道勢(shì)壘的共存機(jī)理進(jìn)行了驗(yàn)證。研究表明,相對(duì)于雜質(zhì)漂移或隧道勢(shì)壘機(jī)理,兩者共存的導(dǎo)電機(jī)理能夠更客觀的反映器件導(dǎo)電的物理規(guī)律,并且兩種機(jī)理的共存是導(dǎo)致憶阻器導(dǎo)電行為具有不穩(wěn)定性的主要原因。(3)基于所提出的共存模型研究了各個(gè)器件參數(shù)及工作參數(shù)對(duì)鈦氧化物憶阻器導(dǎo)電特性的影響,并據(jù)此提出了提高器件導(dǎo)電穩(wěn)定性的方法,對(duì)制備具有優(yōu)良導(dǎo)電特性的鈦氧化物憶阻器具有潛在價(jià)值。(4)分別針對(duì)雜質(zhì)漂移模型、隧道勢(shì)壘模型及雜質(zhì)漂移與隧道勢(shì)壘共存模型研究了鈦氧化物憶阻器阻抗?fàn)顟B(tài)的控制方法,并基于雜質(zhì)漂移模型提出了一種鈦氧化物憶阻器阻抗?fàn)顟B(tài)控制電路,利用SPICE仿真驗(yàn)證了所提出電路的正確性。(5)基于鈦氧化物憶阻器阻抗控制方法設(shè)計(jì)了一種通頻帶參數(shù)可調(diào)且非易失的模擬濾波電路,該電路實(shí)現(xiàn)了通頻帶參數(shù)在設(shè)計(jì)范圍內(nèi)的精確調(diào)整,并且具有斷電非易失的特性,解決了傳統(tǒng)模擬濾波器電路中改變通頻帶參數(shù)需改變電路結(jié)構(gòu)的問題。(6)基于鈦氧化物憶阻器阻抗控制方法設(shè)計(jì)了一種模擬信號(hào)加密解密電路,該電路分別利用憶阻器的非線性導(dǎo)電特性及電荷記憶性對(duì)模擬信號(hào)進(jìn)行加密與解密,為憶阻器應(yīng)用于信息安全領(lǐng)域提供了新的思路。最后,在總結(jié)本課題研究工作的基礎(chǔ)上,提出了后續(xù)工作的改進(jìn)建議。
[Abstract]:Titanium oxide resistor is a kind of physical realization of theoretical resistor, which is a hot spot in the field of material science, circuit science and artificial intelligence at home and abroad. The emergence of this circuit element may fundamentally change the physical basis of electronic information technology. However, titanium oxide amnesia devices have nanoscale size and complex electrical properties, and their conductive processes are subject to different materials. Although the effects and effects of parameters and mechanisms have been studied in many ways, no conclusion has been reached at present. Therefore, the impedance state control and application of titanium oxide memristor are the key problems to be solved. This paper mainly focuses on the conductive mechanism and impedance state control method of titanium oxide memristor. The main contents of this paper are as follows: 1. The contents of the study include: 1) the current situation of titanium oxide memory devices has been investigated. The research status of device fabrication, conduction mechanism, modeling, simulation and application at home and abroad are analyzed, and the remaining deficiencies in current research are summarized. The conductive mechanism of impurity drift and tunneling barrier coexisting in titanium oxide amnesia is put forward. Based on this, a coexistence model is proposed, and the coexistence mechanism of impurity drift and tunneling barrier is verified by simulation. The results show that, compared with impurity drift or tunneling barrier mechanism, The conduction mechanism of the two coexisting can reflect the physical law of the electric conduction of the device more objectively. The coexistence of the two mechanisms is the main reason for the instability of the conductive behavior of the device. (3) based on the proposed coexistence model, the effects of the device parameters and the operating parameters on the conductive characteristics of the titanium oxide memory device are studied. Based on this, a method to improve the conductive stability of the device is proposed, which has potential value for preparing titanium oxide amnesia with excellent conductive properties. Tunnel barrier model and the coexistence model of impurity drift and tunneling barrier are used to study the impedance state control method of titanium oxide memristor. Based on impurity drift model, a kind of impedance state control circuit of titanium oxide memristor is proposed. The correctness of the proposed circuit is verified by SPICE simulation. (5) based on the impedance control method of titanium oxide resistor, an analog filter circuit with adjustable pass band parameters and non-volatile parameters is designed. The circuit realizes the accurate adjustment of the parameters of the passband in the design range, and has the characteristics of non-volatile power loss. This paper solves the problem of changing the circuit structure in the traditional analog filter circuit. (6) based on the impedance control method of titanium oxide amnesia, an analog signal encryption and decryption circuit is designed. The circuit encrypts and decrypts the analog signal by using the nonlinear conductive characteristics and the charge memory of the resistor, which provides a new way of thinking for the application of the resistor in the field of information security. Finally, based on the summary of the research work in this paper, Suggestions for improvement of follow-up work are put forward.
【學(xué)位授予單位】：國防科學(xué)技術(shù)大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM501

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