本文關(guān)鍵詞： IGBT 驅(qū)動(dòng)保護(hù) 整晶圓IGBT 雙向功率模塊　出處：《湖南大學(xué)》2014年碩士論文　論文類型：學(xué)位論文

【摘要】：目前，以IGBT為核心的變換器在工業(yè)電機(jī)驅(qū)動(dòng)、新能源發(fā)電、電力傳輸、電能變換、電能質(zhì)量控制和無功補(bǔ)償?shù)阮I(lǐng)域廣泛應(yīng)用，在中等及大功率應(yīng)用中逐漸占據(jù)主導(dǎo)地位。驅(qū)動(dòng)和保護(hù)電路的性能直接影響著IGBT的性能和變換器系統(tǒng)的安全穩(wěn)定運(yùn)行。 本文在詳細(xì)分析了IGBT的工作原理基礎(chǔ)上，對(duì)中高壓大功率IGBT的驅(qū)動(dòng)保護(hù)電路的常用技術(shù)進(jìn)行了分析、比較和總結(jié)；針對(duì)驅(qū)動(dòng)峰值電流不夠、驅(qū)動(dòng)功率不足的問題，分析了常規(guī)方法即驅(qū)動(dòng)器外加推挽放大電路和隔離電源的優(yōu)缺點(diǎn)和適用范圍之后，提出了驅(qū)動(dòng)器雙通道并聯(lián)的驅(qū)動(dòng)設(shè)計(jì)方案，來提供雙倍的驅(qū)動(dòng)功率和驅(qū)動(dòng)峰值電流，增加驅(qū)動(dòng)能力，并通過Pspice仿真和實(shí)驗(yàn)驗(yàn)證該思路的正確性；采用驅(qū)動(dòng)器雙通道并聯(lián)設(shè)計(jì)了一種正在開發(fā)的3300V/3000A整晶圓特大容量IGBT驅(qū)動(dòng)電路，還設(shè)計(jì)了dv/dt、過壓、短路保護(hù)電路，避免整晶圓特大容量IGBT失效；同時(shí)對(duì)矩陣變換器系統(tǒng)中雙向功率模塊的驅(qū)動(dòng)和保護(hù)電路進(jìn)行分析、總結(jié)和設(shè)計(jì)。主要工作如下： 首先，介紹了IGBT的結(jié)構(gòu)、模型、靜態(tài)特性，結(jié)合理論公式詳細(xì)的分析了開關(guān)過程中驅(qū)動(dòng)參數(shù)對(duì)IGBT開關(guān)特性的影響；通過對(duì)安全工作區(qū)的進(jìn)一步認(rèn)識(shí)，分析了IGBT的失效機(jī)理。 其次，在深入研究IGBT門極驅(qū)動(dòng)基本要求的基礎(chǔ)上，對(duì)驅(qū)動(dòng)電路各部分的基本原理、常用的設(shè)計(jì)方法進(jìn)行了分析、比較和總結(jié)；針對(duì)中高壓大功率IGBT驅(qū)動(dòng)的特殊要求，通過比較研究提出了采用2SC0535雙通道并聯(lián)驅(qū)動(dòng)方案來設(shè)計(jì)整晶圓特大容量高壓IGBT驅(qū)動(dòng)電路，，仿真和實(shí)驗(yàn)結(jié)果驗(yàn)證了設(shè)計(jì)方法的正確性。 再次，詳細(xì)的分析了中高壓大功率IGBT保護(hù)電路的設(shè)計(jì)要求，總結(jié)了dv/dt、過壓、過流保護(hù)電路常用設(shè)計(jì)方法的優(yōu)缺點(diǎn)、適用范圍；在此基礎(chǔ)上設(shè)計(jì)了一種較為完整的整晶圓特大容量高壓IGBT保護(hù)電路，測(cè)試實(shí)驗(yàn)結(jié)果驗(yàn)證了設(shè)計(jì)方案的合理性。 最后，對(duì)基于IGBT的矩陣變換器雙向功率模塊進(jìn)行了分類，在總結(jié)各自特點(diǎn)及其驅(qū)動(dòng)保護(hù)電路的設(shè)計(jì)難點(diǎn)的基礎(chǔ)上，針對(duì)RB-IGBT反并聯(lián)組合形式的雙向開關(guān)，在采用常規(guī)的高壓快速恢復(fù)二極管檢測(cè)短路電流時(shí)，出現(xiàn)反向高壓短路燒毀保護(hù)電路的問題，提出了采用多個(gè)電阻串聯(lián)限流的短路保護(hù)檢測(cè)設(shè)計(jì)方法。
[Abstract]:At present, converters based on IGBT are widely used in the fields of industrial motor drive, new energy generation, power transmission, power conversion, power quality control and reactive power compensation. The performance of drive and protection circuits has a direct impact on the performance of IGBT and the safe and stable operation of converter system. Based on the detailed analysis of the working principle of IGBT, this paper analyzes, compares and summarizes the common techniques of the drive protection circuit of the medium-high voltage and high-power IGBT, aiming at the problem of insufficient driving peak current and insufficient driving power. After analyzing the advantages and disadvantages and the applicable range of conventional methods, that is, the driver external push-pull amplifier circuit and the isolation power supply, a parallel drive scheme of the driver with two channels is proposed to provide double driving power and driving peak current. The drive ability is increased, and the correctness of the idea is verified by Pspice simulation and experiment. A 3300V / 3000A wafer IGBT drive circuit is designed in parallel with the driver, and a DVD / DT, overvoltage and short-circuit protection circuit is also designed. At the same time, the drive and protection circuits of bidirectional power modules in matrix converter system are analyzed, summarized and designed. The main work is as follows:. Firstly, the structure, model and static characteristics of IGBT are introduced, and the influence of the driving parameters on the switching characteristics of IGBT is analyzed in detail with the theoretical formula, and the failure mechanism of IGBT is analyzed through the further understanding of the safe working area. Secondly, on the basis of deeply studying the basic requirements of IGBT gate drive, the basic principle and common design methods of each driving circuit are analyzed, compared and summarized. In this paper, a 2SC0535 dual-channel parallel drive scheme is proposed to design the high-voltage IGBT drive circuit with large wafer capacity. The simulation and experimental results verify the correctness of the design method. Thirdly, the design requirements of IGBT protection circuit are analyzed in detail, and the advantages and disadvantages and applicable range of the common design methods of DVD / DT, over voltage and over current protection circuit are summarized. On this basis, a relatively complete high voltage IGBT protection circuit with large wafer capacity is designed, and the rationality of the design is verified by the test results. Finally, the bidirectional power modules of matrix converter based on IGBT are classified. On the basis of summarizing the characteristics of each module and the design difficulties of the drive and protection circuit, the bi-directional switch in the form of anti-parallel combination of RB-IGBT is proposed. When the conventional high voltage fast recovery diode is used to detect the short circuit current, the problem of the reverse high voltage short circuit burning protection circuit appears. A design method of short circuit protection detection using multiple resistors in series current limiting is proposed.
【學(xué)位授予單位】：湖南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM46

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本文編號(hào)：1513317