本文關鍵詞： IGBT 驅動保護 整晶圓IGBT 雙向功率模塊　出處：《湖南大學》2014年碩士論文　論文類型：學位論文

【摘要】：目前，以IGBT為核心的變換器在工業(yè)電機驅動、新能源發(fā)電、電力傳輸、電能變換、電能質量控制和無功補償等領域廣泛應用，在中等及大功率應用中逐漸占據主導地位。驅動和保護電路的性能直接影響著IGBT的性能和變換器系統(tǒng)的安全穩(wěn)定運行。 本文在詳細分析了IGBT的工作原理基礎上，對中高壓大功率IGBT的驅動保護電路的常用技術進行了分析、比較和總結；針對驅動峰值電流不夠、驅動功率不足的問題，分析了常規(guī)方法即驅動器外加推挽放大電路和隔離電源的優(yōu)缺點和適用范圍之后，提出了驅動器雙通道并聯(lián)的驅動設計方案，來提供雙倍的驅動功率和驅動峰值電流，增加驅動能力，并通過Pspice仿真和實驗驗證該思路的正確性；采用驅動器雙通道并聯(lián)設計了一種正在開發(fā)的3300V/3000A整晶圓特大容量IGBT驅動電路，還設計了dv/dt、過壓、短路保護電路，避免整晶圓特大容量IGBT失效；同時對矩陣變換器系統(tǒng)中雙向功率模塊的驅動和保護電路進行分析、總結和設計。主要工作如下： 首先，介紹了IGBT的結構、模型、靜態(tài)特性，結合理論公式詳細的分析了開關過程中驅動參數對IGBT開關特性的影響；通過對安全工作區(qū)的進一步認識，分析了IGBT的失效機理。 其次，在深入研究IGBT門極驅動基本要求的基礎上，對驅動電路各部分的基本原理、常用的設計方法進行了分析、比較和總結；針對中高壓大功率IGBT驅動的特殊要求，通過比較研究提出了采用2SC0535雙通道并聯(lián)驅動方案來設計整晶圓特大容量高壓IGBT驅動電路，，仿真和實驗結果驗證了設計方法的正確性。 再次，詳細的分析了中高壓大功率IGBT保護電路的設計要求，總結了dv/dt、過壓、過流保護電路常用設計方法的優(yōu)缺點、適用范圍；在此基礎上設計了一種較為完整的整晶圓特大容量高壓IGBT保護電路，測試實驗結果驗證了設計方案的合理性。 最后，對基于IGBT的矩陣變換器雙向功率模塊進行了分類，在總結各自特點及其驅動保護電路的設計難點的基礎上，針對RB-IGBT反并聯(lián)組合形式的雙向開關，在采用常規(guī)的高壓快速恢復二極管檢測短路電流時，出現反向高壓短路燒毀保護電路的問題，提出了采用多個電阻串聯(lián)限流的短路保護檢測設計方法。
[Abstract]:At present, converters based on IGBT are widely used in the fields of industrial motor drive, new energy generation, power transmission, power conversion, power quality control and reactive power compensation. The performance of drive and protection circuits has a direct impact on the performance of IGBT and the safe and stable operation of converter system. Based on the detailed analysis of the working principle of IGBT, this paper analyzes, compares and summarizes the common techniques of the drive protection circuit of the medium-high voltage and high-power IGBT, aiming at the problem of insufficient driving peak current and insufficient driving power. After analyzing the advantages and disadvantages and the applicable range of conventional methods, that is, the driver external push-pull amplifier circuit and the isolation power supply, a parallel drive scheme of the driver with two channels is proposed to provide double driving power and driving peak current. The drive ability is increased, and the correctness of the idea is verified by Pspice simulation and experiment. A 3300V / 3000A wafer IGBT drive circuit is designed in parallel with the driver, and a DVD / DT, overvoltage and short-circuit protection circuit is also designed. At the same time, the drive and protection circuits of bidirectional power modules in matrix converter system are analyzed, summarized and designed. The main work is as follows:. Firstly, the structure, model and static characteristics of IGBT are introduced, and the influence of the driving parameters on the switching characteristics of IGBT is analyzed in detail with the theoretical formula, and the failure mechanism of IGBT is analyzed through the further understanding of the safe working area. Secondly, on the basis of deeply studying the basic requirements of IGBT gate drive, the basic principle and common design methods of each driving circuit are analyzed, compared and summarized. In this paper, a 2SC0535 dual-channel parallel drive scheme is proposed to design the high-voltage IGBT drive circuit with large wafer capacity. The simulation and experimental results verify the correctness of the design method. Thirdly, the design requirements of IGBT protection circuit are analyzed in detail, and the advantages and disadvantages and applicable range of the common design methods of DVD / DT, over voltage and over current protection circuit are summarized. On this basis, a relatively complete high voltage IGBT protection circuit with large wafer capacity is designed, and the rationality of the design is verified by the test results. Finally, the bidirectional power modules of matrix converter based on IGBT are classified. On the basis of summarizing the characteristics of each module and the design difficulties of the drive and protection circuit, the bi-directional switch in the form of anti-parallel combination of RB-IGBT is proposed. When the conventional high voltage fast recovery diode is used to detect the short circuit current, the problem of the reverse high voltage short circuit burning protection circuit appears. A design method of short circuit protection detection using multiple resistors in series current limiting is proposed.
【學位授予單位】：湖南大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TM46

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相關期刊論文 前10條

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本文編號：1513317