本文關(guān)鍵詞：憶阻器在自適應(yīng)濾波電路與混沌電路中的應(yīng)用研究　出處：《湘潭大學(xué)》2014年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 憶阻器 自適應(yīng)濾波 數(shù)字控制 混沌電路 狀態(tài)轉(zhuǎn)移

【摘要】：電子領(lǐng)域的電路元件除了電阻、電感、電容這三種基本元件之外，2008年又發(fā)現(xiàn)了第四種具有記憶功能的基本元件——憶阻器。憶阻器不同于傳統(tǒng)電子器件，可能導(dǎo)致電子電路的結(jié)構(gòu)體系、原理、設(shè)計(jì)理論的變革。本文從理論分析和數(shù)值仿真兩方面透析憶阻器電學(xué)特性，對憶阻器在自適應(yīng)濾波電路和混沌電路中的應(yīng)用進(jìn)行了相關(guān)研究，并在此基礎(chǔ)上利用憶阻器特性設(shè)計(jì)了一種數(shù)字控制憶阻型自適應(yīng)濾波電路和二次型憶阻器四階混沌電路。主要研究工作如下： (1)對HP(Hewlett-Packard)實(shí)驗(yàn)室研制的鉑-二氧化鈦-鉑(Pt-TiO2-Pt下文簡稱PTP)無源憶阻器進(jìn)行了模型分析，數(shù)值仿真可知，相比于其它三種基本電路元件，憶阻器具有頻率滯后性、阻值易控性等特點(diǎn)。憶阻器的伏安特性曲線為斜8字形滯回曲線，并且曲線形狀跟隨輸入信號(hào)頻率變化。頻率不斷增大時(shí)，滯回曲線開始逐漸收縮，若頻率向無窮逼近時(shí)，滯回曲線將退化為一條過原點(diǎn)的直線，此時(shí)憶阻器近似于常規(guī)線性電阻R。此時(shí)，憶阻器轉(zhuǎn)化為線性電阻的阻值(稱為憶阻值M)即為其初始狀態(tài)憶阻值M0。 (2)基于PTP型無源憶阻器與初始狀態(tài)憶阻值M0相關(guān)的頻率特性，設(shè)計(jì)了一類基于憶阻器的數(shù)字控制自適應(yīng)濾波電路。利用電路改變憶阻器初始狀態(tài)憶阻值M0，，進(jìn)而改變?yōu)V波電路截止頻率fc實(shí)現(xiàn)選頻。以及利用憶阻器頻率滯后性、阻值易控性等特點(diǎn)實(shí)現(xiàn)濾波電路的數(shù)字控制和自適應(yīng)濾波效果。數(shù)值仿真驗(yàn)證了設(shè)計(jì)的有效性。 (3)憶阻器作為一種新發(fā)現(xiàn)的非線性器件，易于設(shè)計(jì)混沌電路，由PTP型無源憶阻器得到的荷控二次型憶阻器模型，更符合物理實(shí)際，利用此模型并基于蔡氏混沌電路演化而來的拓?fù)鋵ε冀Y(jié)構(gòu)，設(shè)計(jì)了一種新型憶阻器四階混沌電路。理論分析、仿真及電路實(shí)現(xiàn)結(jié)果表明，該電路具有依賴于憶阻器初始狀態(tài)和隨時(shí)間以及系統(tǒng)參數(shù)變化的狀態(tài)轉(zhuǎn)移等復(fù)雜動(dòng)力學(xué)行為。 開展的研究工作對憶阻器應(yīng)用有一定參考價(jià)值。
[Abstract]:In addition to the field of electronic circuit element resistance, inductance, in addition to the three basic components of capacitance, was found in 2008, fourth basic elements with the function of memory -- the memristor. Memristor is different from the traditional electronic devices, may lead to structural system, electronic circuit design principle, the change of theory. This paper from two aspects of theory analysis and numerical simulation on memristor electrical characteristics, the application of memristor in adaptive filter circuit and chaotic circuit is researched, based on memristor characteristics to design a digital controlled memristor type adaptive filter circuit and the two type of memristor four order chaotic circuit. The research work is as follows:
(1) to HP (Hewlett-Packard) - Platinum laboratory developed TiO2 Pt (hereinafter referred to as Pt-TiO2-Pt PTP) passive memristor has analyzed, numerical simulation shows that, compared to the other three basic circuit elements, the memristor with frequency lag, resistance is controllable. The volt ampere characteristic curve of memristor the oblique figure 8 hysteretic curve, and the curve shape follow the input signal frequency changes. The frequency increases, the hysteretic curve began to shrink, if the frequency of infinite approximation, the hysteresis curve will be degenerated into a straight line through the origin, the memristor is similar to the conventional linear resistance R. at this moment. The memristor is transformed into linear resistance (called Yi resistance M) is the initial state of memory resistance M0.
(2) the frequency characteristic of PTP passive memristor and initial state memory resistance based on M0 correlation, design a kind of memristor based digital control circuit. By using the adaptive filter circuit changes the initial state memory resistor memory resistance M0 filter circuit, and then change the cut-off frequency of FC frequency. And the use of memristor frequency lag, resistance and easy to control etc. to realize digital control and adaptive filtering effect circuit. Simulation results verify the effectiveness of the design.
(3) the memristor is a nonlinear device that is easy to design, chaotic circuit, by PTP passive memristor has two types of charge controlled memristor model, more in line with the actual physics, using this model and topological dual structure and evolution based on Chua's circuit, designed a the four order model of memristor chaotic circuit. Theoretical analysis, simulation and implementation results show that the circuit has a circuit, depending on the initial state of the memory resistor and the time variation of the system parameters and the state transfer complex dynamic behavior.
The research work has a certain reference value for the application of the memristor.

【學(xué)位授予單位】：湘潭大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM13;TN713

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