Radiation Damage Analysis of Individual Subcells for GaInP/G
發(fā)布時(shí)間:2024-03-02 04:20
The radiation damage of three individual subcells for GaInP/GaAs/Ge triple-junction solar cells irradiated with electrons and protons is investigated using photoluminescence(PL) measurements. The PL spectra of each subcell are obtained using different excitation lasers. The PL intensity has a fast degradation after irradiation,and decreases as the displacement damage dose increases. Furthermore, the normalized PL intensity varying with the displacement damage dose is analyzed in detail, and then...
【文章頁數(shù)】:4 頁
本文編號(hào):3916325
【文章頁數(shù)】:4 頁
本文編號(hào):3916325
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